Overview
The 2N2222AUATXV is a silicon planar epitaxial NPN transistor produced by TT Electronics/Optek Technology. It is designed for high-speed switching applications and features a robust set of specifications that make it suitable for a variety of electronic circuits. This transistor is part of the 2N2222A series, known for its reliability and performance in switching and amplification roles.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Base Voltage (IE=0) | VCBO | 75 | V |
| Collector-Emitter Voltage (IB=0) | VCEO | 50 | V |
| Emitter-Base Voltage (IC=0) | VEBO | 6 | V |
| Collector Current | IC | 800 | mA |
| Total Device Dissipation at TA≤25℃ | PT | 500 | mW |
| Total Device Dissipation at TC≤25℃ | PT | 1.0 | W |
| Thermal Resistance Junction to Ambient | Rthja | 300 | °C/W |
| Thermal Resistance Junction to Case | Rthjc | 83.3 | °C/W |
| Operating Temperature Range | TJ | -65 to +200 | °C |
| Storage Temperature Range | TSTG | -65 to +200 | °C |
| DC Current Gain (hFE) Min | hFE | 100 | |
| Collector-Emitter Saturation Voltage | Vce(sat) | 1 | V |
| Collector Current Cutoff | ICBO | 10 nA | |
| Input Capacitance | 25 pF | ||
| Moisture Sensitivity Level | 1 | ||
| Package Style | SMD-3 | ||
| Mounting Method | Surface Mount |
Key Features
- High-Speed Switching Capability: Designed for high-speed switching applications with collector current up to 500 mA.
- Low Saturation Voltage: Features low saturation voltage, typically 1 V.
- Wide Operating Temperature Range: Operates over a temperature range of -65°C to +200°C.
- High Current Gain: Offers a minimum DC current gain (hFE) of 100.
- Low Leakage Currents: Exhibits low leakage currents, enhancing overall efficiency.
- Surface Mount Package: Available in SMD-3 package, suitable for surface mount assembly.
Applications
The 2N2222AUATXV transistor is versatile and can be used in a variety of applications, including:
- Switching Circuits: Ideal for high-speed switching due to its low saturation voltage and high current gain.
- Amplifier Circuits: Suitable for use in audio and video amplifiers.
- Power Switches: Can be used in power switching applications due to its high collector current capability.
- Sensor and Control Circuits: Useful in sensor circuits and control systems requiring reliable switching performance.
Q & A
- What is the maximum collector-emitter voltage of the 2N2222AUATXV transistor?
The maximum collector-emitter voltage (VCEO) is 50 V. - What is the maximum collector current of the 2N2222AUATXV transistor?
The maximum collector current (IC) is 800 mA. - What is the operating temperature range of the 2N2222AUATXV transistor?
The operating temperature range is -65°C to +200°C. - What is the typical collector-emitter saturation voltage of the 2N2222AUATXV transistor?
The typical collector-emitter saturation voltage (Vce(sat)) is 1 V. - What is the minimum DC current gain (hFE) of the 2N2222AUATXV transistor?
The minimum DC current gain (hFE) is 100. - What is the package style of the 2N2222AUATXV transistor?
The package style is SMD-3, and it is a surface mount type. - What are the typical applications of the 2N2222AUATXV transistor?
It is typically used in switching circuits, amplifier circuits, power switches, and sensor and control circuits. - What is the thermal resistance junction to ambient of the 2N2222AUATXV transistor?
The thermal resistance junction to ambient (Rthja) is 300 °C/W. - What is the moisture sensitivity level of the 2N2222AUATXV transistor?
The moisture sensitivity level is 1. - What is the input capacitance of the 2N2222AUATXV transistor?
The input capacitance is typically 25 pF.
