1N4148 A0G
  • Share:

Taiwan Semiconductor Corporation 1N4148 A0G

Manufacturer No:
1N4148 A0G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Cut Tape (CT)
Description:
DIODE GEN PURP 100V 150MA DO35
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4148 A0G is a high-speed switching diode produced by Taiwan Semiconductor Corporation. This diode is part of the 1N4148 series and is known for its fast switching capabilities and high surge current handling. It is encapsulated in a DO-35 package and features pure tin plated leads, making it suitable for a variety of electronic applications. The 1N4148 A0G is RoHS compliant and hermetically sealed in glass, ensuring reliability and environmental friendliness.

Key Specifications

Parameter Symbol Value Unit
Repetitive Peak Reverse Voltage VRRM 100 V
Forward Current (Average) IF(AV) 150 mA
Forward Voltage at IF = 10mA VF 1 V
Non-repetitive Peak Forward Surge Current (t = 1μs) IFSM 2 A
Reverse Recovery Time trr 4 ns
Junction Temperature Range TJ -65 to +150 °C
Storage Temperature Range TSTG -65 to +150 °C
Package DO-35
Terminal Material Pure tin plated leads
Polarity Indication Cathode band

Key Features

  • Fast switching device with a reverse recovery time (trr) of less than 4ns
  • High surge current capability
  • Hermetically sealed in glass for reliability
  • RoHS compliant and environmentally friendly
  • Pure tin plated leads, solderable per J-STD-002
  • Low forward voltage drop (VF = 1V at IF = 10mA)

Applications

  • Switching mode power supplies (SMPS)
  • Adapters
  • Lighting applications
  • On-board DC/DC converters
  • General-purpose switching and rectification in electronic circuits

Q & A

  1. What is the maximum repetitive peak reverse voltage of the 1N4148 A0G diode?

    The maximum repetitive peak reverse voltage (VRRM) is 100V.

  2. What is the average forward current rating of the 1N4148 A0G?

    The average forward current (IF(AV)) is 150mA.

  3. What is the forward voltage drop at 10mA for the 1N4148 A0G?

    The forward voltage (VF) at 10mA is 1V.

  4. What is the reverse recovery time of the 1N4148 A0G?

    The reverse recovery time (trr) is less than 4ns.

  5. What is the junction temperature range for the 1N4148 A0G?

    The junction temperature range is -65°C to +150°C.

  6. Is the 1N4148 A0G RoHS compliant?
  7. What type of package does the 1N4148 A0G come in?

    The 1N4148 A0G comes in a DO-35 package.

  8. What is the material of the leads on the 1N4148 A0G?

    The leads are made of pure tin and are solderable per J-STD-002.

  9. How is the polarity indicated on the 1N4148 A0G?

    The polarity is indicated by a cathode band.

  10. What are some common applications of the 1N4148 A0G?

    Common applications include switching mode power supplies, adapters, lighting applications, and on-board DC/DC converters.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):150mA
Voltage - Forward (Vf) (Max) @ If:1 V @ 100 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):4 ns
Current - Reverse Leakage @ Vr:5 µA @ 75 V
Capacitance @ Vr, F:4pF @ 0V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AH, DO-35, Axial
Supplier Device Package:DO-35
Operating Temperature - Junction:-65°C ~ 150°C
0 Remaining View Similar

In Stock

$0.20
2,940

Please send RFQ , we will respond immediately.

Same Series
1N914B A0G
1N914B A0G
DIODE GEN PURP 100V 150MA DO35
1N4448 A0G
1N4448 A0G
DIODE GEN PURP 100V 150MA DO35

Related Product By Categories

1N4007-E3/53
1N4007-E3/53
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 1A DO204AL
BAS20-E3-18
BAS20-E3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 150V 200MA SOT23
STPSC4H065D
STPSC4H065D
STMicroelectronics
DIODE SCHOTTKY 650V 4A TO220AC
BAT43WS RRG
BAT43WS RRG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA SOD323F
1N4148WQ-13-F
1N4148WQ-13-F
Diodes Incorporated
SWITCHING DIODE SOD123 T&R 10K
MBRS130
MBRS130
Fairchild Semiconductor
RECTIFIER, SCHOTTKY, 1A, 30V
1N4004GH
1N4004GH
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO204AL
BAS16T-TP
BAS16T-TP
Micro Commercial Co
DIODE GEN PURP 85V 75MA SOT523
1N5711UBD
1N5711UBD
Microchip Technology
SCHOTTKY BARRIER DIODE CERAMIC S
MUR4100E
MUR4100E
onsemi
DIODE GEN PURP 1KV 4A DO201AD
STTH20R04G
STTH20R04G
STMicroelectronics
DIODE GEN PURP 400V 20A D2PAK
NRVBS360BT3G
NRVBS360BT3G
onsemi
DIODE SCHOTTKY 60V 3A SMB

Related Product By Brand

1.5KE68AH
1.5KE68AH
Taiwan Semiconductor Corporation
TVS DIODE 58.1VWM 92VC DO201
1.5KE68A A0G
1.5KE68A A0G
Taiwan Semiconductor Corporation
TVS DIODE 58.1VWM 92VC DO201
MUR420 A0G
MUR420 A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 4A DO201AD
BAT43-L0 R0
BAT43-L0 R0
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35
BZV55C18 L0G
BZV55C18 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 18V 500MW MINI MELF
BZV55C3V3 L0G
BZV55C3V3 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 3.3V 500MW MINI MELF
BZV55C6V8 L0G
BZV55C6V8 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 6.8V 500MW MINI MELF
BZX585B5V6 RSG
BZX585B5V6 RSG
Taiwan Semiconductor Corporation
DIODE ZENER 5.6V 200MW SOD523F
ZM4733A L0G
ZM4733A L0G
Taiwan Semiconductor Corporation
DIODE ZENER 5.1V 1W MELF
BZV55C8V2 L1G
BZV55C8V2 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 8.2V 500MW MINI MELF
MMBT3906L RFG
MMBT3906L RFG
Taiwan Semiconductor Corporation
TRANS PNP 40V 0.2A SOT23
BC846B RFG
BC846B RFG
Taiwan Semiconductor Corporation
TRANS NPN 65V 0.1A SOT23