1N4148 A0G
  • Share:

Taiwan Semiconductor Corporation 1N4148 A0G

Manufacturer No:
1N4148 A0G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Cut Tape (CT)
Description:
DIODE GEN PURP 100V 150MA DO35
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4148 A0G is a high-speed switching diode produced by Taiwan Semiconductor Corporation. This diode is part of the 1N4148 series and is known for its fast switching capabilities and high surge current handling. It is encapsulated in a DO-35 package and features pure tin plated leads, making it suitable for a variety of electronic applications. The 1N4148 A0G is RoHS compliant and hermetically sealed in glass, ensuring reliability and environmental friendliness.

Key Specifications

Parameter Symbol Value Unit
Repetitive Peak Reverse Voltage VRRM 100 V
Forward Current (Average) IF(AV) 150 mA
Forward Voltage at IF = 10mA VF 1 V
Non-repetitive Peak Forward Surge Current (t = 1μs) IFSM 2 A
Reverse Recovery Time trr 4 ns
Junction Temperature Range TJ -65 to +150 °C
Storage Temperature Range TSTG -65 to +150 °C
Package DO-35
Terminal Material Pure tin plated leads
Polarity Indication Cathode band

Key Features

  • Fast switching device with a reverse recovery time (trr) of less than 4ns
  • High surge current capability
  • Hermetically sealed in glass for reliability
  • RoHS compliant and environmentally friendly
  • Pure tin plated leads, solderable per J-STD-002
  • Low forward voltage drop (VF = 1V at IF = 10mA)

Applications

  • Switching mode power supplies (SMPS)
  • Adapters
  • Lighting applications
  • On-board DC/DC converters
  • General-purpose switching and rectification in electronic circuits

Q & A

  1. What is the maximum repetitive peak reverse voltage of the 1N4148 A0G diode?

    The maximum repetitive peak reverse voltage (VRRM) is 100V.

  2. What is the average forward current rating of the 1N4148 A0G?

    The average forward current (IF(AV)) is 150mA.

  3. What is the forward voltage drop at 10mA for the 1N4148 A0G?

    The forward voltage (VF) at 10mA is 1V.

  4. What is the reverse recovery time of the 1N4148 A0G?

    The reverse recovery time (trr) is less than 4ns.

  5. What is the junction temperature range for the 1N4148 A0G?

    The junction temperature range is -65°C to +150°C.

  6. Is the 1N4148 A0G RoHS compliant?
  7. What type of package does the 1N4148 A0G come in?

    The 1N4148 A0G comes in a DO-35 package.

  8. What is the material of the leads on the 1N4148 A0G?

    The leads are made of pure tin and are solderable per J-STD-002.

  9. How is the polarity indicated on the 1N4148 A0G?

    The polarity is indicated by a cathode band.

  10. What are some common applications of the 1N4148 A0G?

    Common applications include switching mode power supplies, adapters, lighting applications, and on-board DC/DC converters.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):150mA
Voltage - Forward (Vf) (Max) @ If:1 V @ 100 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):4 ns
Current - Reverse Leakage @ Vr:5 µA @ 75 V
Capacitance @ Vr, F:4pF @ 0V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AH, DO-35, Axial
Supplier Device Package:DO-35
Operating Temperature - Junction:-65°C ~ 150°C
0 Remaining View Similar

In Stock

$0.20
2,940

Please send RFQ , we will respond immediately.

Same Series
1N914B A0G
1N914B A0G
DIODE GEN PURP 100V 150MA DO35
1N4448 A0G
1N4448 A0G
DIODE GEN PURP 100V 150MA DO35

Related Product By Categories

BAT46WH,115
BAT46WH,115
Nexperia USA Inc.
DIODE SCHOT 100V 250MA SOD123F
1N4148UR-1
1N4148UR-1
Microchip Technology
DIODE GEN PURP 75V 200MA DO213AA
MBRM110ET1G
MBRM110ET1G
onsemi
DIODE SCHOTTKY 10V 1A POWERMITE
BYV29-500,127
BYV29-500,127
WeEn Semiconductors
DIODE GEN PURP 500V 9A TO220AC
PMEG2010AEBF
PMEG2010AEBF
Nexperia USA Inc.
DIODE SCHOTTKY 20V 1A SOD523
MBRS140T3G
MBRS140T3G
onsemi
DIODE SCHOTTKY 40V 1A SMB
1N4937GP-E3/54
1N4937GP-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1A DO204AL
BAT54-FS
BAT54-FS
Fairchild Semiconductor
RECTIFIER, SCHOTTKY, 0.2A, 30V,
BAS516-TP
BAS516-TP
Micro Commercial Co
DIODE GEN PURP 100V 250MA SOD523
MURS120HE3/52T
MURS120HE3/52T
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 2A DO214AA
MUR460 B0G
MUR460 B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO201AD
BAT54HYT116
BAT54HYT116
Rohm Semiconductor
30V, 200MA, SOT-23, SINGLE, SCHO

Related Product By Brand

BAV21W RHG
BAV21W RHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 250V 200MA SOD123
MUR460H
MUR460H
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO201AD
BAV21 A0G
BAV21 A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 250V 200MA DO35
1N5821HB0G
1N5821HB0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 3A DO201AD
BAT42-L0 A0G
BAT42-L0 A0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35
BAS85-L0 L0G
BAS85-L0 L0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY MINIMELF
BZV55C12 L0G
BZV55C12 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 12V 500MW MINI MELF
BZV55C39 L0G
BZV55C39 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 39V 500MW MINI MELF
BZV55B7V5 L0G
BZV55B7V5 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 7.5V 500MW MINI MELF
BZX585B13 RSG
BZX585B13 RSG
Taiwan Semiconductor Corporation
DIODE ZENER 13V 200MW SOD523F
BZV55B15 L1G
BZV55B15 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 15V 500MW MINI MELF
BZX79C3V6 A0G
BZX79C3V6 A0G
Taiwan Semiconductor Corporation
DIODE ZENER 3.6V 500MW DO35