1N4148 A0G
  • Share:

Taiwan Semiconductor Corporation 1N4148 A0G

Manufacturer No:
1N4148 A0G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Cut Tape (CT)
Description:
DIODE GEN PURP 100V 150MA DO35
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4148 A0G is a high-speed switching diode produced by Taiwan Semiconductor Corporation. This diode is part of the 1N4148 series and is known for its fast switching capabilities and high surge current handling. It is encapsulated in a DO-35 package and features pure tin plated leads, making it suitable for a variety of electronic applications. The 1N4148 A0G is RoHS compliant and hermetically sealed in glass, ensuring reliability and environmental friendliness.

Key Specifications

Parameter Symbol Value Unit
Repetitive Peak Reverse Voltage VRRM 100 V
Forward Current (Average) IF(AV) 150 mA
Forward Voltage at IF = 10mA VF 1 V
Non-repetitive Peak Forward Surge Current (t = 1μs) IFSM 2 A
Reverse Recovery Time trr 4 ns
Junction Temperature Range TJ -65 to +150 °C
Storage Temperature Range TSTG -65 to +150 °C
Package DO-35
Terminal Material Pure tin plated leads
Polarity Indication Cathode band

Key Features

  • Fast switching device with a reverse recovery time (trr) of less than 4ns
  • High surge current capability
  • Hermetically sealed in glass for reliability
  • RoHS compliant and environmentally friendly
  • Pure tin plated leads, solderable per J-STD-002
  • Low forward voltage drop (VF = 1V at IF = 10mA)

Applications

  • Switching mode power supplies (SMPS)
  • Adapters
  • Lighting applications
  • On-board DC/DC converters
  • General-purpose switching and rectification in electronic circuits

Q & A

  1. What is the maximum repetitive peak reverse voltage of the 1N4148 A0G diode?

    The maximum repetitive peak reverse voltage (VRRM) is 100V.

  2. What is the average forward current rating of the 1N4148 A0G?

    The average forward current (IF(AV)) is 150mA.

  3. What is the forward voltage drop at 10mA for the 1N4148 A0G?

    The forward voltage (VF) at 10mA is 1V.

  4. What is the reverse recovery time of the 1N4148 A0G?

    The reverse recovery time (trr) is less than 4ns.

  5. What is the junction temperature range for the 1N4148 A0G?

    The junction temperature range is -65°C to +150°C.

  6. Is the 1N4148 A0G RoHS compliant?
  7. What type of package does the 1N4148 A0G come in?

    The 1N4148 A0G comes in a DO-35 package.

  8. What is the material of the leads on the 1N4148 A0G?

    The leads are made of pure tin and are solderable per J-STD-002.

  9. How is the polarity indicated on the 1N4148 A0G?

    The polarity is indicated by a cathode band.

  10. What are some common applications of the 1N4148 A0G?

    Common applications include switching mode power supplies, adapters, lighting applications, and on-board DC/DC converters.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):150mA
Voltage - Forward (Vf) (Max) @ If:1 V @ 100 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):4 ns
Current - Reverse Leakage @ Vr:5 µA @ 75 V
Capacitance @ Vr, F:4pF @ 0V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AH, DO-35, Axial
Supplier Device Package:DO-35
Operating Temperature - Junction:-65°C ~ 150°C
0 Remaining View Similar

In Stock

$0.20
2,940

Please send RFQ , we will respond immediately.

Same Series
1N914B A0G
1N914B A0G
DIODE GEN PURP 100V 150MA DO35
1N4448 A0G
1N4448 A0G
DIODE GEN PURP 100V 150MA DO35

Related Product By Categories

1N4148UR-1
1N4148UR-1
Microchip Technology
DIODE GEN PURP 75V 200MA DO213AA
BAS321JX
BAS321JX
Nexperia USA Inc.
BAS321J/SOD323/SOD2
STPS8H100DEE-TR
STPS8H100DEE-TR
STMicroelectronics
DIODE SCHOTTKY 100V 8A POWERFLAT
STTH30L06G-TR
STTH30L06G-TR
STMicroelectronics
DIODE GEN PURP 600V 30A D2PAK
MBR2H100SFT3G
MBR2H100SFT3G
onsemi
DIODE SCHOTTKY 100V 2A SOD123FL
MUR160A
MUR160A
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
PMEG4050ETP-QX
PMEG4050ETP-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
1N4007G L
1N4007G L
MDD
GENERAL DIODE 1KV 1A DO-41
BAS16XV2T1
BAS16XV2T1
onsemi
DIODE SWITCH 200MA 75V SOD523
BAS16_S00Z
BAS16_S00Z
onsemi
DIODE GEN PURP 85V 200MA SOT23-3
MBR0530T3
MBR0530T3
onsemi
DIODE SCHOTTKY 30V 500MA SOD123
1N5821HA0G
1N5821HA0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 3A DO201AD

Related Product By Brand

1.5KE120A R0G
1.5KE120A R0G
Taiwan Semiconductor Corporation
TVS DIODE 102VWM 165VC DO201
1N4148W-G RHG
1N4148W-G RHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 150MA SOD123
MUR420 A0G
MUR420 A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 4A DO201AD
MUR460 A0G
MUR460 A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO201AD
MUR420S R6
MUR420S R6
Taiwan Semiconductor Corporation
DIODE GEN PURP 3A DO214AB
BAT43X-M0 RS
BAT43X-M0 RS
Taiwan Semiconductor Corporation
DIODE SCHOTTKY SOD-523F
BZV55C3V0 L0G
BZV55C3V0 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 3V 500MW MINI MELF
BZV55C68 L0G
BZV55C68 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 68V 500MW MINI MELF
BZV55B10 L1G
BZV55B10 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 10V 500MW MINI MELF
BZV55B27 L1G
BZV55B27 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 27V 500MW MINI MELF
BZV55C2V7 L1G
BZV55C2V7 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 2.7V 500MW MINI MELF
BZX55C13 A0G
BZX55C13 A0G
Taiwan Semiconductor Corporation
DIODE ZENER 13V 500MW DO35