1N4148 A0G
  • Share:

Taiwan Semiconductor Corporation 1N4148 A0G

Manufacturer No:
1N4148 A0G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Cut Tape (CT)
Description:
DIODE GEN PURP 100V 150MA DO35
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4148 A0G is a high-speed switching diode produced by Taiwan Semiconductor Corporation. This diode is part of the 1N4148 series and is known for its fast switching capabilities and high surge current handling. It is encapsulated in a DO-35 package and features pure tin plated leads, making it suitable for a variety of electronic applications. The 1N4148 A0G is RoHS compliant and hermetically sealed in glass, ensuring reliability and environmental friendliness.

Key Specifications

Parameter Symbol Value Unit
Repetitive Peak Reverse Voltage VRRM 100 V
Forward Current (Average) IF(AV) 150 mA
Forward Voltage at IF = 10mA VF 1 V
Non-repetitive Peak Forward Surge Current (t = 1μs) IFSM 2 A
Reverse Recovery Time trr 4 ns
Junction Temperature Range TJ -65 to +150 °C
Storage Temperature Range TSTG -65 to +150 °C
Package DO-35
Terminal Material Pure tin plated leads
Polarity Indication Cathode band

Key Features

  • Fast switching device with a reverse recovery time (trr) of less than 4ns
  • High surge current capability
  • Hermetically sealed in glass for reliability
  • RoHS compliant and environmentally friendly
  • Pure tin plated leads, solderable per J-STD-002
  • Low forward voltage drop (VF = 1V at IF = 10mA)

Applications

  • Switching mode power supplies (SMPS)
  • Adapters
  • Lighting applications
  • On-board DC/DC converters
  • General-purpose switching and rectification in electronic circuits

Q & A

  1. What is the maximum repetitive peak reverse voltage of the 1N4148 A0G diode?

    The maximum repetitive peak reverse voltage (VRRM) is 100V.

  2. What is the average forward current rating of the 1N4148 A0G?

    The average forward current (IF(AV)) is 150mA.

  3. What is the forward voltage drop at 10mA for the 1N4148 A0G?

    The forward voltage (VF) at 10mA is 1V.

  4. What is the reverse recovery time of the 1N4148 A0G?

    The reverse recovery time (trr) is less than 4ns.

  5. What is the junction temperature range for the 1N4148 A0G?

    The junction temperature range is -65°C to +150°C.

  6. Is the 1N4148 A0G RoHS compliant?
  7. What type of package does the 1N4148 A0G come in?

    The 1N4148 A0G comes in a DO-35 package.

  8. What is the material of the leads on the 1N4148 A0G?

    The leads are made of pure tin and are solderable per J-STD-002.

  9. How is the polarity indicated on the 1N4148 A0G?

    The polarity is indicated by a cathode band.

  10. What are some common applications of the 1N4148 A0G?

    Common applications include switching mode power supplies, adapters, lighting applications, and on-board DC/DC converters.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):150mA
Voltage - Forward (Vf) (Max) @ If:1 V @ 100 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):4 ns
Current - Reverse Leakage @ Vr:5 µA @ 75 V
Capacitance @ Vr, F:4pF @ 0V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AH, DO-35, Axial
Supplier Device Package:DO-35
Operating Temperature - Junction:-65°C ~ 150°C
0 Remaining View Similar

In Stock

$0.20
2,940

Please send RFQ , we will respond immediately.

Same Series
1N914B A0G
1N914B A0G
DIODE GEN PURP 100V 150MA DO35
1N4448 A0G
1N4448 A0G
DIODE GEN PURP 100V 150MA DO35

Related Product By Categories

1N4148WS_R1_00001
1N4148WS_R1_00001
Panjit International Inc.
SOD-323, SWITCHING
STTH2R06S
STTH2R06S
STMicroelectronics
DIODE GEN PURP 600V 2A SMC
BAT54WSQ-7-F
BAT54WSQ-7-F
Diodes Incorporated
DIODE SCHOTTKY 30V 100MA SOD323
MBR10100-M3/4W
MBR10100-M3/4W
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 10A TO220AC
NRVUS1MFA
NRVUS1MFA
onsemi
DIODE GEN PURP 1A1000V SOD123-2
STTH108
STTH108
STMicroelectronics
DIODE GEN PURP 800V 1A DO41
PMEG4010ER-QX
PMEG4010ER-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
MURS260-M3/5BT
MURS260-M3/5BT
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 2A DO214AA
BAT720-F2-0000HF
BAT720-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE SCHOTTKY 40V 500MA SOT23
MURS140-13
MURS140-13
Diodes Incorporated
DIODE GEN PURP 400V 1A SMB
MUR120-E3/73
MUR120-E3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 1A DO204AC
BAT54T-HF
BAT54T-HF
Comchip Technology
DIODE SCHOTTKY 30V 0.2A SOT-23

Related Product By Brand

1.5KE6.8A A0G
1.5KE6.8A A0G
Taiwan Semiconductor Corporation
TVS DIODE 5.8VWM 10.5VC DO201
1N4148W-G RHG
1N4148W-G RHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 150MA SOD123
MUR460S V7G
MUR460S V7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO214AB
1N5406GHA0G
1N5406GHA0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 3A DO201AD
MUR160 A0G
MUR160 A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AC
1N4004GR0
1N4004GR0
Taiwan Semiconductor Corporation
1A,400V,STD.GLASS PASSIVATED REC
BZV55C22 L0G
BZV55C22 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 22V 500MW MINI MELF
BZV55B3V0 L0G
BZV55B3V0 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 3V 500MW MINI MELF
BZX84C12 RFG
BZX84C12 RFG
Taiwan Semiconductor Corporation
DIODE ZENER 12V 300MW SOT23
BZV55C2V7 L1G
BZV55C2V7 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 2.7V 500MW MINI MELF
BZX585B6V8 RKG
BZX585B6V8 RKG
Taiwan Semiconductor Corporation
DIODE ZENER 6.8V 200MW SOD523F
BC856B RFG
BC856B RFG
Taiwan Semiconductor Corporation
TRANS PNP 65V 0.1A SOT23