STTH3012W
  • Share:

STMicroelectronics STTH3012W

Manufacturer No:
STTH3012W
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
DIODE GEN PURP 1.2KV 30A DO247
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STTH3012W is a high-performance, ultrafast high voltage diode produced by STMicroelectronics. This diode is designed to offer low leakage current, reproducible characteristics, and intrinsic ruggedness, making it suitable for a variety of high-power applications. It features a repetitive peak reverse voltage (VRRM) of 1200 V and an average forward current (IF(AV)) of 30 A, with a maximum operating junction temperature of 175°C. The device is available in several package types, including DO-247, DO-247 LL, and TO-220AC, ensuring flexibility in design and implementation.

Key Specifications

Parameter Value Unit
VRRM (Repetitive peak reverse voltage) 1200 V
IF(RMS) (Forward rms current) 50 A
IF(AV) (Average forward current) 30 A
IFSM (Surge non-repetitive forward current) 210 A
Tstg (Storage temperature range) -65 to +175 °C
Tj (Maximum operating junction temperature) 175 °C
VF (Forward voltage drop at 25°C) 1.30 V
trr (Reverse recovery time at 25°C) 48 ns
IRM (Reverse recovery current at 125°C) 25-35 A
QRR (Reverse recovery charge) 5700 nC

Key Features

  • Ultrafast recovery time of 48 ns, making it suitable for high-frequency applications.
  • Low conduction and switching losses, enhancing overall efficiency.
  • High surge current capability of 210 A, ensuring robustness against transient conditions.
  • Low forward voltage drop of 1.30 V at 30 A, reducing power losses.
  • High maximum operating junction temperature of 175°C, allowing for reliable operation in demanding environments.
  • Available in ECOPACK packages, which meet environmental compliance standards.

Applications

  • High-power rectification in industrial and automotive systems.
  • Power supplies and DC-DC converters requiring high efficiency and fast switching times.
  • Motor control and drive systems where high current and voltage handling are necessary.
  • Renewable energy systems, such as solar and wind power inverters.
  • High-frequency applications, including RF and microwave systems.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the STTH3012W diode?

    The maximum repetitive peak reverse voltage (VRRM) is 1200 V.

  2. What is the average forward current rating of the STTH3012W?

    The average forward current (IF(AV)) is 30 A.

  3. What is the maximum operating junction temperature for the STTH3012W?

    The maximum operating junction temperature (Tj) is 175°C.

  4. What is the typical forward voltage drop of the STTH3012W at 30 A?

    The typical forward voltage drop (VF) at 30 A is 1.30 V.

  5. What is the reverse recovery time of the STTH3012W?

    The reverse recovery time (trr) is typically 48 ns.

  6. What is the maximum surge current the STTH3012W can handle?

    The maximum surge non-repetitive forward current (IFSM) is 210 A.

  7. In what packages is the STTH3012W available?

    The STTH3012W is available in DO-247, DO-247 LL, and TO-220AC packages.

  8. What are the environmental compliance standards met by the STTH3012W packages?

    The packages meet ECOPACK environmental compliance standards.

  9. What are some typical applications for the STTH3012W diode?

    Typical applications include high-power rectification, power supplies, motor control systems, renewable energy systems, and high-frequency applications.

  10. How does the STTH3012W handle thermal management?

    The device uses conduction cooling methods and has specified thermal parameters such as junction to case thermal resistance (Rth(j-c)) to ensure effective thermal management.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1200 V
Current - Average Rectified (Io):30A
Voltage - Forward (Vf) (Max) @ If:2.25 V @ 30 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):115 ns
Current - Reverse Leakage @ Vr:20 µA @ 1200 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:DO-247-2 (Straight Leads)
Supplier Device Package:DO-247
Operating Temperature - Junction:175°C (Max)
0 Remaining View Similar

In Stock

$4.14
103

Please send RFQ , we will respond immediately.

Same Series
STTH3012D
STTH3012D
DIODE GEN PURP 1.2KV 30A TO220AC

Similar Products

Part Number STTH3012W STTH30S12W STTH3002W STTH3010W STTH3012D
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Obsolete Active Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 1200 V 1200 V 200 V 1000 V 1200 V
Current - Average Rectified (Io) 30A 30A 30A 30A 30A
Voltage - Forward (Vf) (Max) @ If 2.25 V @ 30 A 2.9 V @ 30 A 1.05 V @ 30 A 2 V @ 30 A 2.25 V @ 30 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 115 ns 50 ns 50 ns 100 ns 115 ns
Current - Reverse Leakage @ Vr 20 µA @ 1200 V 15 µA @ 1200 V 20 µA @ 200 V 15 µA @ 1000 V 20 µA @ 1200 V
Capacitance @ Vr, F - - - - -
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-247-2 (Straight Leads) DO-247-2 (Straight Leads) DO-247-2 (Straight Leads) DO-247-2 (Straight Leads) TO-220-2
Supplier Device Package DO-247 DO-247 DO-247 DO-247 TO-220AC
Operating Temperature - Junction 175°C (Max) 175°C (Max) 175°C (Max) 175°C (Max) 175°C (Max)

Related Product By Categories

1N4007FFG
1N4007FFG
onsemi
DIODE GEN PURP 1000V 1A DO41
1N4001G-T
1N4001G-T
Diodes Incorporated
DIODE GEN PURP 50V 1A DO41
STTH5L06RL
STTH5L06RL
STMicroelectronics
DIODE GEN PURP 600V 5A DO201AD
BAS16L-G3-08
BAS16L-G3-08
Vishay General Semiconductor - Diodes Division
SWITCHING DIODE GENPURP DFN1006-
1N4007RLG
1N4007RLG
onsemi
DIODE GEN PURP 1000V 1A DO41
BAS16-E3-08
BAS16-E3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 150MA SOT23
MURS140T3G
MURS140T3G
onsemi
DIODE GEN PURP 400V 1A SMB
1N5711UR-1E3
1N5711UR-1E3
Microchip Technology
SCHOTTKY BARRIER DIODE MELF SURF
MUR120-E3/73
MUR120-E3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 1A DO204AC
1N5821HA0G
1N5821HA0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 3A DO201AD
BAT54-7-F-31
BAT54-7-F-31
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA SOT23-3
MUR420S R6
MUR420S R6
Taiwan Semiconductor Corporation
DIODE GEN PURP 3A DO214AB

Related Product By Brand

SM15T75AY
SM15T75AY
STMicroelectronics
TVS DIODE 64.1VWM 134VC SMC
STP11NK40Z
STP11NK40Z
STMicroelectronics
MOSFET N-CH 400V 9A TO220AB
STGW80H65DFB-4
STGW80H65DFB-4
STMicroelectronics
IGBT BIPO 650V 80A TO247
STM32L562VET6
STM32L562VET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 100LQFP
FDA801B-VYT
FDA801B-VYT
STMicroelectronics
IC AMP CLASS D QUAD 50W 64LQFP
M95160-DRMN3TP/K
M95160-DRMN3TP/K
STMicroelectronics
IC EEPROM 16KBIT SPI 20MHZ 8SO
VNH7070ASTR
VNH7070ASTR
STMicroelectronics
IC MOTOR DRIVER 4V-28V 16SOIC
VNQ5050AKTR-E
VNQ5050AKTR-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO24
LF90CPT-TR
LF90CPT-TR
STMicroelectronics
IC REG LINEAR 9V 500MA PPAK
L7809ABV
L7809ABV
STMicroelectronics
IC REG LINEAR 9V 1.5A TO220AB
L78L06ACZ-AP
L78L06ACZ-AP
STMicroelectronics
IC REG LINEAR 6V 100MA TO92-3
TDA7708LTR
TDA7708LTR
STMicroelectronics
ADD INFOTAINMENT