STTH3012W
  • Share:

STMicroelectronics STTH3012W

Manufacturer No:
STTH3012W
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
DIODE GEN PURP 1.2KV 30A DO247
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STTH3012W is a high-performance, ultrafast high voltage diode produced by STMicroelectronics. This diode is designed to offer low leakage current, reproducible characteristics, and intrinsic ruggedness, making it suitable for a variety of high-power applications. It features a repetitive peak reverse voltage (VRRM) of 1200 V and an average forward current (IF(AV)) of 30 A, with a maximum operating junction temperature of 175°C. The device is available in several package types, including DO-247, DO-247 LL, and TO-220AC, ensuring flexibility in design and implementation.

Key Specifications

Parameter Value Unit
VRRM (Repetitive peak reverse voltage) 1200 V
IF(RMS) (Forward rms current) 50 A
IF(AV) (Average forward current) 30 A
IFSM (Surge non-repetitive forward current) 210 A
Tstg (Storage temperature range) -65 to +175 °C
Tj (Maximum operating junction temperature) 175 °C
VF (Forward voltage drop at 25°C) 1.30 V
trr (Reverse recovery time at 25°C) 48 ns
IRM (Reverse recovery current at 125°C) 25-35 A
QRR (Reverse recovery charge) 5700 nC

Key Features

  • Ultrafast recovery time of 48 ns, making it suitable for high-frequency applications.
  • Low conduction and switching losses, enhancing overall efficiency.
  • High surge current capability of 210 A, ensuring robustness against transient conditions.
  • Low forward voltage drop of 1.30 V at 30 A, reducing power losses.
  • High maximum operating junction temperature of 175°C, allowing for reliable operation in demanding environments.
  • Available in ECOPACK packages, which meet environmental compliance standards.

Applications

  • High-power rectification in industrial and automotive systems.
  • Power supplies and DC-DC converters requiring high efficiency and fast switching times.
  • Motor control and drive systems where high current and voltage handling are necessary.
  • Renewable energy systems, such as solar and wind power inverters.
  • High-frequency applications, including RF and microwave systems.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the STTH3012W diode?

    The maximum repetitive peak reverse voltage (VRRM) is 1200 V.

  2. What is the average forward current rating of the STTH3012W?

    The average forward current (IF(AV)) is 30 A.

  3. What is the maximum operating junction temperature for the STTH3012W?

    The maximum operating junction temperature (Tj) is 175°C.

  4. What is the typical forward voltage drop of the STTH3012W at 30 A?

    The typical forward voltage drop (VF) at 30 A is 1.30 V.

  5. What is the reverse recovery time of the STTH3012W?

    The reverse recovery time (trr) is typically 48 ns.

  6. What is the maximum surge current the STTH3012W can handle?

    The maximum surge non-repetitive forward current (IFSM) is 210 A.

  7. In what packages is the STTH3012W available?

    The STTH3012W is available in DO-247, DO-247 LL, and TO-220AC packages.

  8. What are the environmental compliance standards met by the STTH3012W packages?

    The packages meet ECOPACK environmental compliance standards.

  9. What are some typical applications for the STTH3012W diode?

    Typical applications include high-power rectification, power supplies, motor control systems, renewable energy systems, and high-frequency applications.

  10. How does the STTH3012W handle thermal management?

    The device uses conduction cooling methods and has specified thermal parameters such as junction to case thermal resistance (Rth(j-c)) to ensure effective thermal management.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1200 V
Current - Average Rectified (Io):30A
Voltage - Forward (Vf) (Max) @ If:2.25 V @ 30 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):115 ns
Current - Reverse Leakage @ Vr:20 µA @ 1200 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:DO-247-2 (Straight Leads)
Supplier Device Package:DO-247
Operating Temperature - Junction:175°C (Max)
0 Remaining View Similar

In Stock

$4.14
103

Please send RFQ , we will respond immediately.

Same Series
STTH3012D
STTH3012D
DIODE GEN PURP 1.2KV 30A TO220AC

Similar Products

Part Number STTH3012W STTH30S12W STTH3002W STTH3010W STTH3012D
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Obsolete Active Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 1200 V 1200 V 200 V 1000 V 1200 V
Current - Average Rectified (Io) 30A 30A 30A 30A 30A
Voltage - Forward (Vf) (Max) @ If 2.25 V @ 30 A 2.9 V @ 30 A 1.05 V @ 30 A 2 V @ 30 A 2.25 V @ 30 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 115 ns 50 ns 50 ns 100 ns 115 ns
Current - Reverse Leakage @ Vr 20 µA @ 1200 V 15 µA @ 1200 V 20 µA @ 200 V 15 µA @ 1000 V 20 µA @ 1200 V
Capacitance @ Vr, F - - - - -
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-247-2 (Straight Leads) DO-247-2 (Straight Leads) DO-247-2 (Straight Leads) DO-247-2 (Straight Leads) TO-220-2
Supplier Device Package DO-247 DO-247 DO-247 DO-247 TO-220AC
Operating Temperature - Junction 175°C (Max) 175°C (Max) 175°C (Max) 175°C (Max) 175°C (Max)

Related Product By Categories

1N4007FFG
1N4007FFG
onsemi
DIODE GEN PURP 1000V 1A DO41
PMEG3015EH,115
PMEG3015EH,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 1.5A SOD123F
BAS20WTHE3-TP
BAS20WTHE3-TP
Micro Commercial Co
DIODE GEN PURP 150V 200MA SOT323
STPSC4H065D
STPSC4H065D
STMicroelectronics
DIODE SCHOTTKY 650V 4A TO220AC
RB751S40T1G
RB751S40T1G
onsemi
DIODE SCHOTTKY 30V 30MA SOD523
STPS2H100A
STPS2H100A
STMicroelectronics
DIODE SCHOTTKY 100V 2A SMA
1N4002GP
1N4002GP
Fairchild Semiconductor
RECTIFIER DIODE
BAS16WH6433XTMA1
BAS16WH6433XTMA1
Infineon Technologies
DIODE GEN PURP 80V 250MA SOT323
BAS21E6433HTMA1
BAS21E6433HTMA1
Infineon Technologies
DIODE GEN PURP 200V 250MA SOT23
STPS2H100AFN
STPS2H100AFN
STMicroelectronics
100 V, 2 A POWER SCHOTTKY RECTIF
FFSB10120A-F085
FFSB10120A-F085
onsemi
1200V 10A AUTO SIC SBD
MBRS130LT3
MBRS130LT3
onsemi
DIODE SCHOTTKY 30V 1A SMB

Related Product By Brand

STD6N80K5
STD6N80K5
STMicroelectronics
MOSFET N-CH 800V 4.5A DPAK
STH410N4F7-6AG
STH410N4F7-6AG
STMicroelectronics
MOSFET N-CH 40V 200A H2PAK-6
STP18N60M2
STP18N60M2
STMicroelectronics
MOSFET N-CH 600V 13A TO220
TDA7418
TDA7418
STMicroelectronics
IC AUDIO SIGNAL PROCESSOR 20SO
STA333BWJ13TR
STA333BWJ13TR
STMicroelectronics
IC FULLY INTEG PROC POWERSSO-36
STM32F072RBH6
STM32F072RBH6
STMicroelectronics
IC MCU 32BIT 128KB FLASH 64UFBGA
TDA7360HS
TDA7360HS
STMicroelectronics
IC AMP AB MONO/STER 11MULTIWATT
VNQ5050AKTR-E
VNQ5050AKTR-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO24
VN750SM
VN750SM
STMicroelectronics
IC PWR DRIVER N-CHANNEL 1:1 8SO
VN5E025AJ-E
VN5E025AJ-E
STMicroelectronics
IC PWR SWTCH N-CHAN 1:1 PWRSSO12
VNQ6004SA-E
VNQ6004SA-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO36
L4995KTR
L4995KTR
STMicroelectronics
IC REG LIN 5V 500MA POWERSSO-24