STN851
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STMicroelectronics STN851

Manufacturer No:
STN851
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
TRANS NPN 60V 5A SOT223
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STN851 is a low voltage fast-switching NPN power transistor manufactured by STMicroelectronics. It is produced using Planar Technology with a "Base Island" layout, which results in exceptional high gain performance and very low saturation voltage. This transistor is designed for high efficiency in low voltage switching applications.

Key Specifications

Parameter Value Unit
Collector-base voltage (VCBO) 150 V
Collector-emitter voltage (VCEO) 60 V
Emitter-base voltage (VEBO) 7 V
Collector current (IC) 5 A
Collector peak current (ICM) 10 A (tP < 5 ms)
Base current (IB) 1 A
Base peak current (IBM) 2 A (tP < 5 ms)
Total dissipation at Tamb = 25 °C (Ptot) 1.6 W
Storage temperature (Tstg) -65 to 150 °C
Max. operating junction temperature (TJ) 150 °C
Thermal resistance junction-ambient (Rthj-amb) 78 °C/W
Collector-emitter saturation voltage (VCE(sat)) 10 - 500 mV (depending on IC and IB)
Base-emitter saturation voltage (VBE(sat)) 1 - 1.15 V (depending on IC and IB)
DC current gain (hFE) 30 - 350 (depending on IC and VCE)
Transition frequency (fT) 130 MHz

Key Features

  • Very low collector to emitter saturation voltage
  • Fast-switching speed
  • High current gain characteristic

Applications

  • Emergency lighting
  • Voltage regulators
  • Relay drivers
  • High efficiency low voltage switching applications

Q & A

  1. What is the collector-base voltage (VCBO) of the STN851?

    The collector-base voltage (VCBO) of the STN851 is 150 V.

  2. What is the maximum collector current (IC) of the STN851?

    The maximum collector current (IC) of the STN851 is 5 A.

  3. What is the thermal resistance junction-ambient (Rthj-amb) of the STN851?

    The thermal resistance junction-ambient (Rthj-amb) of the STN851 is 78 °C/W.

  4. What are the key features of the STN851?

    The key features include very low collector to emitter saturation voltage, fast-switching speed, and high current gain characteristic.

  5. What are some typical applications of the STN851?

    Typical applications include emergency lighting, voltage regulators, relay drivers, and high efficiency low voltage switching applications.

  6. What is the maximum operating junction temperature (TJ) of the STN851?

    The maximum operating junction temperature (TJ) of the STN851 is 150 °C.

  7. What is the package type of the STN851?

    The STN851 is packaged in SOT-223.

  8. Is the STN851 RoHS compliant?
  9. What is the transition frequency (fT) of the STN851?

    The transition frequency (fT) of the STN851 is 130 MHz.

  10. Where can I purchase the STN851?

    The STN851 can be purchased directly from the STMicroelectronics eStore or through authorized distributors.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):5 A
Voltage - Collector Emitter Breakdown (Max):60 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 200mA, 5A
Current - Collector Cutoff (Max):50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:150 @ 2A, 1V
Power - Max:1.6 W
Frequency - Transition:130MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-261-4, TO-261AA
Supplier Device Package:SOT-223
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Similar Products

Part Number STN851 STN951
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
Transistor Type NPN PNP
Current - Collector (Ic) (Max) 5 A 5 A
Voltage - Collector Emitter Breakdown (Max) 60 V 60 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 200mA, 5A 500mV @ 200mA, 5A
Current - Collector Cutoff (Max) 50nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 2A, 1V 150 @ 2A, 1V
Power - Max 1.6 W 1.6 W
Frequency - Transition 130MHz 130MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA
Supplier Device Package SOT-223 SOT-223

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