Overview
The STN83003 is a high voltage fast-switching NPN power transistor manufactured by STMicroelectronics. It is specifically designed for applications in compact fluorescent lamps, where it is often paired with its complementary PNP transistor, the STN93003. This transistor utilizes high voltage multi-epitaxial planar technology to achieve high switching speeds and medium voltage capability. The cellular emitter structure with planar edge termination enhances switching speeds while maintaining a wide Reverse Bias Safe Operating Area (RBSOA).
Key Specifications
Parameter | Value | Unit |
---|---|---|
Collector-emitter voltage (VBE = 0) | 700 | V |
Collector-emitter voltage (IB = 0) | 400 | V |
Emitter-base voltage (IC = 0, IB = 0.75 A, tP < 10 µs) | 12 - 18 | V |
Collector current | 1.5 | A |
Collector peak current (tP < 5 ms) | 3 | A |
Base current | 0.75 | A |
Base peak current (tP < 5 ms) | 1.5 | A |
Total dissipation at Ta = 25 °C | 1.6 | W |
Storage temperature | -65 to 150 | °C |
Max. operating junction temperature | 150 | °C |
Thermal resistance junction-ambient | 78 | °C/W |
Key Features
- High voltage capability up to 700 V (VBE = 0).
- Very high switching speed, making it suitable for fast electronic switching applications.
- Cellular emitter structure with planar edge termination to enhance switching speeds and maintain a wide RBSOA.
- Low spread of dynamic parameters and minimum lot-to-lot spread for reliable operation.
- SOT-223 plastic package for surface mounting circuits.
- Tape and reel packing for efficient handling and storage.
Applications
- Electronics ballasts for fluorescent lighting, particularly in compact fluorescent lamps.
- Switch mode power supplies due to its high switching speed and medium voltage capability.
Q & A
- What is the STN83003 transistor primarily used for?
The STN83003 is primarily used in electronics ballasts for fluorescent lighting, especially in compact fluorescent lamps, and in switch mode power supplies.
- What is the maximum collector-emitter voltage of the STN83003?
The maximum collector-emitter voltage (VBE = 0) is 700 V.
- What is the maximum collector current of the STN83003?
The maximum collector current is 1.5 A, with a peak current of 3 A for pulses less than 5 ms.
- What is the thermal resistance junction-ambient of the STN83003?
The thermal resistance junction-ambient is 78 °C/W when the device is mounted on a PCB area of 1 cm².
- What package type is the STN83003 available in?
The STN83003 is available in an SOT-223 plastic package for surface mounting circuits.
- What is the maximum operating junction temperature of the STN83003?
The maximum operating junction temperature is 150 °C.
- What technology is used to manufacture the STN83003?
The STN83003 is manufactured using high voltage multi-epitaxial planar technology.
- What is the storage temperature range for the STN83003?
The storage temperature range is -65 to 150 °C.
- What is the typical collector-emitter saturation voltage of the STN83003?
The typical collector-emitter saturation voltage is 1 V for IC = 0.35 A and IB = 50 mA.
- Is the STN83003 suitable for high-frequency switching applications?
Yes, the STN83003 is designed for very high switching speeds, making it suitable for high-frequency switching applications.