Overview
The BUL216 is a high voltage fast-switching NPN power transistor manufactured by STMicroelectronics. It is produced using high voltage Multiepitaxial Mesa technology, which ensures cost-effective high performance. The transistor features a Hollow Emitter structure that enhances switching speeds, making it suitable for various high-performance applications.
The BUL series, including the BUL216, is specifically designed for use in lighting applications and low-cost switch-mode power supplies. Its high voltage capability, high operating junction temperature, and very high switching speed make it an ideal choice for demanding electrical systems.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (VBE = 0) | 1600 | V |
| Collector-Emitter Voltage (IB = 0) | 800 | V |
| Emitter-Base Voltage (IC = 0) | 9 | V |
| Collector Current | 4 | A |
| Collector Peak Current (tp < 5 ms) | 6 | A |
| Base Current | 2 | A |
| Base Peak Current (tp < 5 ms) | 4 | A |
| Total Dissipation at Tc = 25°C | 90 | W |
| Storage Temperature | -65 to 150 | °C |
| Max. Operating Junction Temperature | 150 | °C |
| Thermal Resistance Junction-Case | 1.39 | °C/W |
| Thermal Resistance Junction-Ambient | 62.5 | °C/W |
Key Features
- High Voltage Capability: The BUL216 can handle high collector-emitter voltages up to 800 V and collector-emitter voltages up to 1600 V when VBE = 0.
- Very High Switching Speed: Enhanced by the Hollow Emitter structure, making it suitable for fast-switching applications.
- High Operating Junction Temperature: Can operate up to a maximum junction temperature of 150°C.
- High Ruggedness: Designed to withstand demanding operating conditions.
- Cost-Effective High Performance: Utilizes Multiepitaxial Mesa technology for efficient performance.
Applications
- Electronic Ballasts for Fluorescent Lighting: Ideal for lighting applications due to its high voltage and fast-switching capabilities.
- Switch Mode Power Supplies: Suitable for low-cost switch-mode power supplies requiring high performance and reliability.
Q & A
- What is the maximum collector-emitter voltage of the BUL216?
The maximum collector-emitter voltage (VCEO) is 800 V when IB = 0, and 1600 V when VBE = 0.
- What is the maximum collector current of the BUL216?
The maximum collector current (IC) is 4 A, with a peak current of 6 A for pulses less than 5 ms.
- What is the thermal resistance junction-case of the BUL216?
The thermal resistance junction-case (Rthj-case) is 1.39 °C/W.
- What are the typical applications of the BUL216?
The BUL216 is typically used in electronic ballasts for fluorescent lighting and low-cost switch-mode power supplies.
- What technology is used in the manufacture of the BUL216?
The BUL216 is manufactured using high voltage Multiepitaxial Mesa technology.
- What is the maximum operating junction temperature of the BUL216?
The maximum operating junction temperature is 150°C.
- What is the storage temperature range for the BUL216?
The storage temperature range is -65 to 150°C).
- What is the total dissipation at Tc = 25°C for the BUL216?
The total dissipation at Tc = 25°C is 90 W).
- What is the base-emitter saturation voltage of the BUL216?
The base-emitter saturation voltage (VBE(sat)) is typically 1.2 V).
- What is the collector-emitter saturation voltage of the BUL216?
The collector-emitter saturation voltage (VCE(sat)) is typically 3 V for IC = 1 A and IB = 0.2 A).
