BC847CHZGT116
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Rohm Semiconductor BC847CHZGT116

Manufacturer No:
BC847CHZGT116
Manufacturer:
Rohm Semiconductor
Package:
Tape & Reel (TR)
Description:
TRANS NPN 45V 0.1A SST3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC847CHZGT116 is an NPN general-purpose transistor manufactured by Rohm Semiconductor. It is designed for use in audio frequency small signal amplifiers and is packaged in the SOT-23 (TO-236AB) format. This transistor is part of the BC847 series, which is known for its reliability and performance in various electronic circuits.

Key Specifications

Parameter Symbol Value Unit
Package Code - TO-236AB (SOT-23) -
Number of Terminals - 3 -
Polarity - NPN -
Collector-Emitter Voltage (VCEO) VCEO 45 V
Collector Current (IC) IC 0.1 A
DC Current Gain (hFE) hFE 420 to 800 -
Collector Power Dissipation (PC) PC 0.2 W
Storage Temperature Tstg -55 to +150 °C
Junction Temperature Tj 150 °C
Transition Frequency (fT) fT > 100 MHz -
Package Size - 2.9x2.4 (t=1.2) mm -

Key Features

  • Silicon planar epitaxial transistor
  • General-purpose NPN transistor
  • Collector-Emitter voltage (VCEO) > 45V (IC = 1mA)
  • Complements the BC857B transistor
  • Surface mount package (SOT-23)
  • High transition frequency (fT > 100 MHz)
  • Low collector-emitter saturation voltage (VCE(sat))

Applications

The BC847CHZGT116 is suitable for various applications, including:

  • Audio frequency small signal amplifiers
  • General-purpose switching and amplification circuits
  • Automotive electronics (contact sales for specific automotive usage)
  • Consumer electronics requiring reliable and efficient transistor performance

Q & A

  1. What is the package type of the BC847CHZGT116 transistor?

    The BC847CHZGT116 transistor is packaged in the SOT-23 (TO-236AB) format.

  2. What is the maximum collector-emitter voltage (VCEO) of the BC847CHZGT116?

    The maximum collector-emitter voltage (VCEO) is 45V.

  3. What is the typical DC current gain (hFE) of the BC847CHZGT116?

    The typical DC current gain (hFE) ranges from 420 to 800.

  4. What is the storage temperature range for the BC847CHZGT116?

    The storage temperature range is -55°C to +150°C.

  5. What is the transition frequency (fT) of the BC847CHZGT116?

    The transition frequency (fT) is greater than 100 MHz.

  6. Is the BC847CHZGT116 suitable for automotive applications?

    For automotive usage, please contact the sales department.

  7. What is the collector power dissipation (PC) of the BC847CHZGT116?

    The collector power dissipation (PC) is 0.2W.

  8. What are the dimensions of the BC847CHZGT116 package?

    The package dimensions are 2.9x2.4 (t=1.2) mm.

  9. Does the BC847CHZGT116 complement any other transistor models?

    Yes, it complements the BC857B transistor.

  10. What is the maximum collector current (IC) of the BC847CHZGT116?

    The maximum collector current (IC) is 0.1 A.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:400mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:420 @ 2mA, 5V
Power - Max:200 mW
Frequency - Transition:300MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SST3
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