Overview
The BD17910STU is a high-performance NPN Power Bipolar Junction Transistor (BJT) manufactured by ON Semiconductor, originally developed by Fairchild Semiconductor. This transistor is designed for medium-power linear and switching applications, offering a robust set of characteristics that make it suitable for a variety of uses. It features a maximum collector-emitter voltage (VCEO) of 80V, a maximum collector current (IC) of 3A, and a maximum power dissipation of 30W. The transistor operates up to a junction temperature of 150°C, making it reliable in demanding environments.
Key Specifications
| Parameter | Value | Units |
|---|---|---|
| Transistor Type | NPN | - |
| Collector-Emitter Voltage (VCEO) | 80 | Vdc |
| Collector Current (IC) | 3 | A |
| Pulse Collector Current (ICP) | 7 | A |
| Collector Dissipation (PC) | 30 | W |
| Junction Temperature (TJ) | 150 | °C |
| Storage Temperature (TSTG) | -65 to 150 | °C |
| DC Current Gain (hFE) @ IC = 150mA, VCE = 2V | 63 | - |
| Collector-Emitter Saturation Voltage (VCE(sat)) @ IC = 1A, IB = 0.1A | 0.8 | V |
| Base-Emitter On Voltage (VBE(on)) @ VCE = 2V, IC = 1A | 1.3 | V |
| Current Gain Bandwidth Product (fT) @ VCE = 10V, IC = 250mA | 3 | MHz |
| Mounting Type | Through Hole | - |
| Package / Case | TO-225AA, TO-126-3 | - |
Key Features
- High Power Handling: The BD17910STU can handle up to 30W of power dissipation, making it suitable for high-power applications.
- High Voltage and Current Ratings: With a maximum collector-emitter voltage of 80V and a maximum collector current of 3A, this transistor is robust and reliable.
- High Junction Temperature: It operates up to a junction temperature of 150°C, ensuring performance in demanding thermal environments.
- Low Saturation Voltage: The collector-emitter saturation voltage (VCE(sat)) is as low as 0.8V, which is beneficial for reducing power losses in switching applications.
- High Current Gain: The DC current gain (hFE) of 63 at IC = 150mA and VCE = 2V ensures good amplification and switching characteristics.
- Through-Hole Mounting: The transistor is available in TO-225AA and TO-126-3 packages, which are easy to mount and solder.
Applications
The BD17910STU is versatile and can be used in various applications, including:
- Switching Circuits: Its high current and voltage ratings, along with low saturation voltage, make it ideal for switching applications.
- Linear Amplifiers: The transistor's medium power handling and high current gain make it suitable for linear amplifier circuits.
- Power Supplies: It can be used in power supply circuits due to its ability to handle high currents and voltages.
- Automotive and Industrial Control: The high junction temperature and robust specifications make it a good choice for automotive and industrial control systems.
Q & A
- What is the maximum collector-emitter voltage (VCEO) of the BD17910STU?
The maximum collector-emitter voltage (VCEO) is 80V.
- What is the maximum collector current (IC) of the BD17910STU?
The maximum collector current (IC) is 3A.
- What is the maximum power dissipation of the BD17910STU?
The maximum power dissipation is 30W.
- What is the junction temperature range of the BD17910STU?
The junction temperature range is up to 150°C.
- What is the DC current gain (hFE) of the BD17910STU at IC = 150mA and VCE = 2V?
The DC current gain (hFE) is 63.
- What is the collector-emitter saturation voltage (VCE(sat)) of the BD17910STU?
The collector-emitter saturation voltage (VCE(sat)) is 0.8V at IC = 1A and IB = 0.1A.
- What are the package types available for the BD17910STU?
The transistor is available in TO-225AA and TO-126-3 packages.
- What is the mounting type of the BD17910STU?
The mounting type is Through Hole.
- What are some typical applications of the BD17910STU?
Typical applications include switching circuits, linear amplifiers, power supplies, and automotive and industrial control systems.
- What is the storage temperature range for the BD17910STU?
The storage temperature range is -65°C to 150°C.
