Overview
The BC856AW_R1_00001 is a PNP general-purpose transistor manufactured by Panjit International Inc. This transistor is part of the BC856AW series and is designed for a wide range of electronic device applications. It features a PNP epitaxial silicon, planar design, making it suitable for general-purpose amplifier applications.
Key Specifications
| Parameter | Value | Units | Conditions |
|---|---|---|---|
| Collector-Emitter Voltage (VCEO) | -65 | V | IC = -10 mA, IB = 0 |
| Collector-Base Voltage (VCBO) | -80 | V | IC = -10 µA, IE = 0 |
| Emitter-Base Voltage (VEB0) | -6 | V | IE = -1 µA, IC = 0 |
| Collector Current (IC) | 100 mA | Continuous | |
| Power Dissipation (PTOT) | 250 mW | Note 1: Transistor mounted on FR-5 board | |
| Junction Temperature Range (TJ) | -55 to 150 °C | ||
| Storage Temperature Range (TSTG) | -55 to 150 °C | ||
| DC Current Gain (hFE) | 110 to 270 | IC = -10 mA, VCE = -5 V | |
| Transition Frequency (fT) | 100 MHz | IC = -100 mA, IB = -5 mA | |
| Package | SOT-323 | ||
| Lead Free/RoHS Compliance | Yes | Compliant with EU RoHS 2011/65/EU directives |
Key Features
- General Purpose Amplifier Applications: Suitable for a wide range of general-purpose amplifier applications.
- PNP Epitaxial Silicon, Planar Design: Features a PNP epitaxial silicon, planar design for reliable performance.
- Halogen Free and Lead Free: Compliant with EU RoHS 2011/65/EU directives and uses halogen-free and lead-free materials.
- High DC Current Gain: Offers a high DC current gain (hFE) ranging from 110 to 270.
- Wide Operating Temperature Range: Operates within a junction temperature range of -55 to 150 °C.
- Low Power Dissipation: Maximum power dissipation of 250 mW.
- Complimentary NPN Devices: Complimentary NPN devices available in the BC846AW/BC847AW/BC848AW/BC849BW series.
Applications
- General Purpose Amplifiers: Ideal for use in general-purpose amplifier circuits.
- Switching Circuits: Can be used in switching applications due to its high DC current gain and low saturation voltage.
- Audio and Signal Processing: Suitable for audio and signal processing applications requiring low noise and high fidelity.
- Automotive and Industrial Electronics: Can be used in various automotive and industrial electronic systems where reliability and durability are crucial.
Q & A
- What is the collector-emitter voltage (VCEO) of the BC856AW_R1_00001 transistor?
The collector-emitter voltage (VCEO) is -65 V.
- What is the maximum collector current (IC) of this transistor?
The maximum collector current (IC) is 100 mA.
- Is the BC856AW_R1_00001 transistor RoHS compliant?
Yes, it is compliant with EU RoHS 2011/65/EU directives.
- What is the operating junction temperature range of this transistor?
The operating junction temperature range is -55 to 150 °C.
- What is the transition frequency (fT) of the BC856AW_R1_00001 transistor?
The transition frequency (fT) is 100 MHz.
- What type of package does the BC856AW_R1_00001 transistor use?
The transistor uses an SOT-323 package.
- Is the BC856AW_R1_00001 transistor halogen-free?
Yes, it is halogen-free.
- What are the complimentary NPN devices for the BC856AW_R1_00001 transistor?
The complimentary NPN devices are available in the BC846AW/BC847AW/BC848AW/BC849BW series.
- What is the maximum power dissipation (PTOT) of this transistor?
The maximum power dissipation is 250 mW.
- What is the DC current gain (hFE) range of the BC856AW_R1_00001 transistor?
The DC current gain (hFE) ranges from 110 to 270.
