Overview
The BC817DPN_R1_00001 is a general-purpose double transistor produced by Panjit International Inc. This component is available in an SOT-323-6L (surface-mount) package and features both NPN and PNP transistor configurations within a single package. This dual-transistor setup makes it versatile for various electronic circuits, including amplifiers, switches, and other small-signal applications.
Key Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | - | - | - | 50 / -50 | V |
| Collector-Emitter Voltage | VCEO | - | - | - | 45 / -45 | V |
| Emitter-Base Voltage | VEBO | - | - | - | 5 / -5 | V |
| Collector Current (DC) | IC | - | - | - | 0.5 / -0.5 | A |
| Collector Current (Pulse) | ICP | - | - | - | 1 / -1 | A |
| Base Current | IB | - | - | - | 0.1 / -0.1 | A |
| Collector Power Dissipation | PD | - | - | - | 330 | mW |
| Operating Junction and Storage Temperature Range | TJ, TSTG | - | - | - | -55 to 150 | °C |
| Thermal Resistance from Junction to Ambient | RθJA | - | - | - | 378 | °C/W |
| DC Current Gain (hFE) | - | VCE = 1V, IC = 0.1A / VCE = 1V, IC = 0.5A | 100 / 40 | - | 600 / - | - |
| Collector-Emitter Saturation Voltage (VCE(SAT)) | - | IC = 0.5A, IB = 50mA / IC = -0.5A, IB = -50mA | - | - | 0.7 / -0.7 | V |
Key Features
- Dual Transistor Configuration: The BC817DPN_R1_00001 includes both NPN and PNP transistors in a single SOT-323-6L package, making it highly versatile for various circuit designs.
- General Purpose: Suitable for a wide range of small-signal applications, including amplifiers, switches, and other electronic circuits.
- Compact Package: The SOT-323-6L surface-mount package is compact and ideal for space-constrained designs.
- High Current Gain: Offers a high DC current gain (hFE) of up to 600, ensuring reliable performance in amplification circuits.
- Low Saturation Voltage: Features a low collector-emitter saturation voltage (VCE(SAT)) of 0.7V, which is beneficial for reducing power consumption in switching applications.
Applications
- Amplifiers: Suitable for use in audio and general-purpose amplifiers due to its high current gain and low noise characteristics.
- Switching Circuits: Ideal for switching applications where low saturation voltage and high current handling are required.
- Automotive Electronics: Can be used in various automotive electronic systems due to its robust thermal and electrical specifications.
- Consumer Electronics: Applicable in consumer electronic devices such as radios, TVs, and other small-signal devices.
Q & A
- What is the package type of the BC817DPN_R1_00001 transistor?
The BC817DPN_R1_00001 is packaged in an SOT-323-6L surface-mount package.
- What are the maximum collector-emitter voltages for NPN and PNP transistors in the BC817DPN_R1_00001?
The maximum collector-emitter voltages are 45V for NPN and -45V for PNP transistors.
- What is the maximum collector current for the BC817DPN_R1_00001 transistor?
The maximum collector current is 0.5A for both NPN and PNP transistors.
- What is the thermal resistance from junction to ambient for the BC817DPN_R1_00001?
The thermal resistance from junction to ambient is 378°C/W.
- What are the typical applications of the BC817DPN_R1_00001 transistor?
Typical applications include amplifiers, switching circuits, automotive electronics, and consumer electronics.
- What is the operating junction and storage temperature range for the BC817DPN_R1_00001?
The operating junction and storage temperature range is -55°C to 150°C.
- Does the BC817DPN_R1_00001 have a high current gain?
Yes, it has a high DC current gain (hFE) of up to 600.
- What is the collector-emitter saturation voltage for the BC817DPN_R1_00001 transistor?
The collector-emitter saturation voltage (VCE(SAT)) is 0.7V for both NPN and PNP transistors.
- Is the BC817DPN_R1_00001 halogen-free?
Yes, the BC817DPN_R1_00001 is halogen-free.
- What is the base-emitter turn-on voltage for the BC817DPN_R1_00001 transistor?
The base-emitter turn-on voltage (VBE(ON)) is approximately 1.2V for both NPN and PNP transistors.
