BC817DPN-AU_R1_000A1
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Panjit International Inc. BC817DPN-AU_R1_000A1

Manufacturer No:
BC817DPN-AU_R1_000A1
Manufacturer:
Panjit International Inc.
Package:
Tape & Reel (TR)
Description:
SOT23-6L, TRANSISTOR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC817DPN-AU_R1_000A1 is a bipolar junction transistor (BJT) array produced by Panjit International Inc. This component is designed for general-purpose applications and features a combination of NPN and PNP transistors in a single package. The BC817DPN is housed in an SOT457 (SC-74) plastic package, making it suitable for surface mount technology (SMT) assembly. This transistor array is widely used in various electronic circuits due to its versatility and reliability.

Key Specifications

ParameterValueUnits
Maximum Collector Power Dissipation (Pc)0.6W
Maximum Collector-Base Voltage |Vcb|50V
Maximum Collector-Emitter Voltage |Vce|45V
Maximum Emitter-Base Voltage |Veb|5V
Maximum Collector Current |Ic max|0.5A
Max. Operating Junction Temperature (Tj)150°C
Transition Frequency (ft)100MHz
Collector Capacitance (Cc)5pF
Forward Current Transfer Ratio (hFE), MIN160
PackageSOT457 (SC-74)

Key Features

  • NPN and PNP transistors in a single SOT457 package, providing a compact solution for dual transistor requirements.
  • Suitable for switching and amplifier applications, including AF-driver stages and low power output stages.
  • High current gain with a minimum forward current transfer ratio (hFE) of 160.
  • Low collector-saturation voltage, enhancing efficiency in switching applications.
  • Lead-free and RoHS compliant, making it environmentally friendly and compliant with international regulations.
  • UL Flammability Classification Rating 94V-0 and moisture sensitivity level 1 per J-STD-020, ensuring reliability in various environmental conditions.

Applications

The BC817DPN-AU_R1_000A1 is versatile and can be used in a variety of applications, including:

  • Switching circuits: Due to its high transition frequency and low collector-saturation voltage, it is ideal for high-speed switching applications.
  • Amplifier stages: Suitable for AF-driver stages and low power output stages in audio amplifiers.
  • Automotive electronics: Meets the stringent requirements of automotive applications with its robust design and compliance with automotive standards.
  • General-purpose electronics: Can be used in various general-purpose electronic circuits requiring reliable and efficient transistor performance.

Q & A

  1. What is the package type of the BC817DPN-AU_R1_000A1 transistor array?
    The BC817DPN-AU_R1_000A1 is packaged in an SOT457 (SC-74) plastic package.
  2. What are the maximum collector power dissipation and collector current for the BC817DPN-AU_R1_000A1?
    The maximum collector power dissipation is 0.6 W, and the maximum collector current is 0.5 A.
  3. What is the transition frequency of the BC817DPN-AU_R1_000A1?
    The transition frequency (ft) is 100 MHz.
  4. Is the BC817DPN-AU_R1_000A1 RoHS compliant?
    Yes, the BC817DPN-AU_R1_000A1 is lead-free and RoHS compliant.
  5. What are the typical applications of the BC817DPN-AU_R1_000A1?
    It is typically used in switching circuits, amplifier stages, automotive electronics, and general-purpose electronic circuits.
  6. What is the maximum operating junction temperature for the BC817DPN-AU_R1_000A1?
    The maximum operating junction temperature (Tj) is 150 °C.
  7. Does the BC817DPN-AU_R1_000A1 have any specific certifications or ratings?
    Yes, it has a UL Flammability Classification Rating 94V-0 and moisture sensitivity level 1 per J-STD-020.
  8. What is the forward current transfer ratio (hFE) of the BC817DPN-AU_R1_000A1?
    The minimum forward current transfer ratio (hFE) is 160.
  9. Can the BC817DPN-AU_R1_000A1 be used in automotive applications?
    Yes, it is designed to meet the stringent requirements of automotive applications.
  10. What is the collector capacitance (Cc) of the BC817DPN-AU_R1_000A1?
    The collector capacitance (Cc) is 5 pF.

Product Attributes

Transistor Type:NPN, PNP
Current - Collector (Ic) (Max):500mA
Voltage - Collector Emitter Breakdown (Max):45V
Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 100mA, 1V
Power - Max:330mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-23-6
Supplier Device Package:SOT-23-6
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