Overview
The BC807-25_R1_00001 is a PNP epitaxial silicon transistor produced by Panjit International Inc. This transistor is part of the BC807 series, which is designed for general-purpose amplifier applications. It features a planar design and is encapsulated in a SOT-23 plastic package, making it suitable for a wide range of electronic circuits.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Base Voltage | VCBO | -50 | V |
| Collector-Emitter Voltage | VCEO | -45 | V |
| Emitter-Base Voltage | VEBO | -5 | V |
| Collector Current | IC | -500 | mA |
| Power Dissipation | PD | 0.3 | W |
| Junction Temperature | TJ | -55 to +150 | °C |
| Storage Temperature | TSTG | -55 to +150 | °C |
| DC Current Gain (hFE) | hFE | 160 - 400 | |
| Collector-Emitter Saturation Voltage | VCE(sat) | -0.7 | V |
| Base-Emitter Saturation Voltage | VBE(sat) | -1.2 | V |
| Transition Frequency | fT | 100 | MHz |
Key Features
- PNP epitaxial silicon transistor with a planar design.
- General-purpose amplifier applications.
- Collector current up to 500 mA.
- Lead-free and compliant with EU RoHS2.0 (2011/65/EU & 2015/865/EU directive).
- Green molding compound as per IEC61249 Std. (Halogen Free).
- SOT-23 plastic package.
- Solderable terminals per MIL-STD-750, Method 2026.
Applications
The BC807-25_R1_00001 transistor is suitable for various general-purpose amplifier applications, including audio amplifiers, switching circuits, and other electronic devices that require a reliable PNP transistor.
Q & A
- What is the collector current rating of the BC807-25_R1_00001 transistor?
The collector current rating is up to 500 mA.
- What is the power dissipation of the BC807-25_R1_00001 transistor?
The power dissipation is 0.3 W.
- What is the junction temperature range for the BC807-25_R1_00001 transistor?
The junction temperature range is -55 to +150 °C.
- Is the BC807-25_R1_00001 transistor lead-free and RoHS compliant?
- What is the package type of the BC807-25_R1_00001 transistor?
The package type is SOT-23.
- What is the typical DC current gain (hFE) of the BC807-25_R1_00001 transistor?
The typical DC current gain (hFE) is between 160 and 400.
- What is the collector-emitter saturation voltage of the BC807-25_R1_00001 transistor?
The collector-emitter saturation voltage is up to 0.7 V.
- What is the base-emitter saturation voltage of the BC807-25_R1_00001 transistor?
The base-emitter saturation voltage is up to 1.2 V.
- What is the transition frequency of the BC807-25_R1_00001 transistor?
The transition frequency is 100 MHz.
- Is the BC807-25_R1_00001 transistor suitable for high-frequency applications?
