1N4148GW6_R1_00001
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Panjit International Inc. 1N4148GW6_R1_00001

Manufacturer No:
1N4148GW6_R1_00001
Manufacturer:
Panjit International Inc.
Package:
Tape & Reel (TR)
Description:
SURFACE MOUNT SWITCHING DIODE
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4148GW6_R1_00001, produced by Panjit International Inc., is a variant of the widely used 1N4148 small signal fast switching diode. This diode is renowned for its reliable performance, low cost, and versatility in various electronic applications. It follows the JEDEC nomenclature and is electrically equivalent to the 1N914 diode, making it a popular choice for switching applications up to about 100 MHz.

Key Specifications

Parameter Value Unit
Maximum Repetitive Reverse Voltage (VRRM) 100 V
Reverse Voltage (VR) 75 V
Peak Forward Surge Current (IFSM) 4 A (1 μs pulse width) A
Repetitive Peak Forward Current (IFRM) 500 mA mA
Forward Continuous Current (IF) 300 mA mA
Average Forward Current (IF(AV)) 200 mA mA
Maximum Forward Voltage (VF) 1 V at 10 mA V
Reverse Recovery Time (trr) 4 ns ns
Power Dissipation (Ptot) 500 mW mW
Diode Capacitance (CD) 4 pF pF

Key Features

  • Silicon epitaxial planar diode with fast switching capabilities.
  • Low forward voltage drop (VF = 1 V at 10 mA).
  • High reverse breakdown voltage (VRRM = 100 V).
  • Low reverse recovery time (trr = 4 ns), making it suitable for high-frequency applications.
  • Available in various packages, including DO-35, SOT-23-6, and others.
  • High peak forward surge current (IFSM = 4 A at 1 μs pulse width).

Applications

  • Switching applications up to about 100 MHz.
  • Logic level conversion (e.g., converting 5V to 3.3V logic levels).
  • Rectification and signal processing in electronic circuits.
  • Military and industrial applications due to its robust specifications.
  • General-purpose switching and rectification in a wide range of electronic devices.

Q & A

  1. What is the maximum repetitive reverse voltage of the 1N4148GW6_R1_00001 diode?

    The maximum repetitive reverse voltage (VRRM) is 100 V.

  2. What is the forward continuous current rating of this diode?

    The forward continuous current (IF) is 300 mA.

  3. What is the reverse recovery time of the 1N4148GW6_R1_00001 diode?

    The reverse recovery time (trr) is 4 ns.

  4. In what packages is the 1N4148 diode available?

    The 1N4148 diode is available in various packages including DO-35, SOT-23-6, and others.

  5. What is the peak forward surge current rating of this diode?

    The peak forward surge current (IFSM) is 4 A at a 1 μs pulse width.

  6. Can the 1N4148 diode be used for high-frequency applications?

    Yes, the 1N4148 diode is suitable for high-frequency applications due to its low reverse recovery time.

  7. Is the 1N4148 diode electrically equivalent to any other diode?

    Yes, the 1N4148 diode is electrically equivalent to the 1N914 diode.

  8. What is the typical forward voltage drop of the 1N4148 diode?

    The typical forward voltage drop (VF) is 1 V at 10 mA.

  9. What are some common applications of the 1N4148 diode?

    Common applications include switching, logic level conversion, rectification, and signal processing in various electronic circuits.

  10. What is the maximum power dissipation of the 1N4148GW6_R1_00001 diode?

    The maximum power dissipation (Ptot) is 500 mW.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):75 V
Current - Average Rectified (Io):150mA
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):4 ns
Current - Reverse Leakage @ Vr:2.5 µA @ 75 V
Capacitance @ Vr, F:1.5pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:SOT-23-6
Supplier Device Package:SOT-23-6
Operating Temperature - Junction:-55°C ~ 150°C
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