Overview
The SZESD7471N2T5G is an ESD (Electrostatic Discharge) protection diode manufactured by onsemi. This component is designed to protect voltage-sensitive components from ESD events, offering excellent clamping capability, low leakage, and fast response times. Its compact XDFN2 package makes it ideal for applications where board space is limited, such as in cellular phones, automotive sensors, infotainment systems, MP3 players, and digital cameras.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Reverse Working Voltage | VRWM | 5 - 16 | V |
| Breakdown Voltage @ 1 mA | VBR1, VBR2 | 10.5 - 16.5 | V |
| Maximum Reverse Leakage Current | IR | 100 nA - 1.0 μA | |
| Clamping Voltage @ 8 kV IEC61000-4-2 | VC | 35 - 38.1 | V |
| Junction Capacitance | CJ | 0.3 - 0.6 | pF |
| IEC61000-4-2 ESD Protection Level | ±12 kV (Contact), ±15 kV (Air) | kV | |
| Junction and Storage Temperature Range | TJ, Tstg | -55 to +150 | °C |
| Lead Solder Temperature (10 Second Duration) | TL | 260 | °C |
Key Features
- Low capacitance of 0.3 pF, making it suitable for high-frequency applications.
- Low clamping voltage to protect sensitive components from ESD damage.
- Low leakage current of 100 nA, minimizing power consumption.
- Fast response time of less than 1 ns to quickly mitigate ESD events.
- IEC61000-4-2 Level 4 ESD protection, ensuring robust protection against electrostatic discharges.
- AEC-Q101 qualified and PPAP capable, suitable for automotive and other demanding applications.
- Pb-free, halogen-free/BFR-free, and RoHS compliant, adhering to environmental standards.
Applications
The SZESD7471N2T5G is designed for use in various applications where ESD protection is crucial, including:
- Cellular phones and other mobile devices.
- Automotive sensors and infotainment systems.
- MP3 players and digital cameras.
- Other electronic devices where board space is limited and ESD protection is essential.
Q & A
- What is the primary function of the SZESD7471N2T5G? The primary function is to protect voltage-sensitive components from electrostatic discharge (ESD) events.
- What is the maximum reverse working voltage of the SZESD7471N2T5G? The maximum reverse working voltage is 16 V.
- What is the clamping voltage of the SZESD7471N2T5G during an 8 kV IEC61000-4-2 ESD event? The clamping voltage is between 35 V and 38.1 V.
- What is the junction capacitance of the SZESD7471N2T5G? The junction capacitance is between 0.3 pF and 0.6 pF.
- Is the SZESD7471N2T5G suitable for automotive applications? Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
- What is the operating temperature range of the SZESD7471N2T5G? The junction and storage temperature range is -55°C to +150°C.
- Is the SZESD7471N2T5G environmentally friendly? Yes, it is Pb-free, halogen-free/BFR-free, and RoHS compliant.
- What is the response time of the SZESD7471N2T5G to ESD events? The response time is less than 1 ns.
- What package type is the SZESD7471N2T5G available in? It is available in the XDFN2 package.
- What are some common applications of the SZESD7471N2T5G? Common applications include cellular phones, automotive sensors, infotainment systems, MP3 players, and digital cameras.
