Overview
The SS8050BBU-ON is an NPN epitaxial silicon transistor manufactured by onsemi. This transistor is designed for general-purpose amplification and switching applications. It is particularly suited for use in Class B push-pull amplifiers, such as those found in portable radios. The SS8050BBU-ON is complementary to the SS8550 PNP transistor, making it a versatile component for a variety of electronic circuits.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Base Voltage | VCBO | 40 | V |
| Collector-Emitter Voltage | VCEO | 25 | V |
| Emitter-Base Voltage | VEBO | 6 | V |
| Collector Current | IC | 1.5 | A |
| Junction Temperature | TJ | 150 | °C |
| Storage Temperature | TSTG | -65 to 150 | °C |
| Power Dissipation | PD | 1 | W |
| Derate Above 25°C | - | 8 mW/°C | - |
| Thermal Resistance, Junction-to-Ambient | RθJA | 125 | °C/W |
| DC Current Gain (hFE) at IC = 100 mA, VCE = 1 V | hFE2 | 85 ~ 300 | - |
| Collector-Emitter Saturation Voltage at IC = 800 mA, IB = 80 mA | VCE(sat) | 0.5 | V |
| Base-Emitter Saturation Voltage at IC = 800 mA, IB = 80 mA | VBE(sat) | 1.2 | V |
| Current Gain Bandwidth Product at VCE = 10 V, IC = 50 mA | fT | 100 | MHz |
Key Features
- General-purpose NPN epitaxial silicon transistor.
- Suitable for Class B push-pull amplifiers in portable radios.
- Complementary to the SS8550 PNP transistor.
- Collector current (IC) up to 1.5 A.
- Collector-emitter voltage (VCEO) up to 25 V.
- Pb-free, halogen-free, and RoHS compliant.
- High DC current gain (hFE) with a range of 85 to 300.
- Low collector-emitter saturation voltage (VCE(sat)) of 0.5 V.
- High current gain bandwidth product (fT) of 100 MHz.
Applications
- Class B push-pull amplifiers in portable radios and other audio equipment.
- General-purpose amplification and switching circuits.
- Automotive and industrial control systems.
- Consumer electronics such as audio amplifiers and power supplies.
Q & A
- What is the maximum collector current of the SS8050BBU-ON transistor?
The maximum collector current (IC) is 1.5 A.
- What is the collector-emitter voltage rating of the SS8050BBU-ON?
The collector-emitter voltage (VCEO) is up to 25 V.
- Is the SS8050BBU-ON transistor RoHS compliant?
- What is the typical DC current gain (hFE) of the SS8050BBU-ON?
The DC current gain (hFE) ranges from 85 to 300 at IC = 100 mA and VCE = 1 V.
- What is the thermal resistance, junction-to-ambient (RθJA) of the SS8050BBU-ON?
The thermal resistance, junction-to-ambient (RθJA) is 125 °C/W.
- What is the current gain bandwidth product (fT) of the SS8050BBU-ON?
The current gain bandwidth product (fT) is 100 MHz at VCE = 10 V and IC = 50 mA.
- What are the typical applications of the SS8050BBU-ON transistor?
It is commonly used in Class B push-pull amplifiers, general-purpose amplification, and switching circuits.
- What is the package type of the SS8050BBU-ON transistor?
The package type is TO-92-3 (TO-226AA).
- What is the maximum junction temperature of the SS8050BBU-ON transistor?
The maximum junction temperature (TJ) is 150 °C.
- What is the storage temperature range for the SS8050BBU-ON transistor?
The storage temperature range (TSTG) is -65 to 150 °C.
