Overview
The SMMBT2369LT1G is a high-performance NPN silicon switching transistor manufactured by onsemi. This device is designed for a wide range of applications, including automotive and other sectors that require stringent quality and reliability standards. It is AEC-Q101 qualified and PPAP capable, ensuring it meets the rigorous demands of automotive and industrial environments. The transistor is packaged in a SOT-23 case, which is Pb-free, halogen-free, and RoHS compliant, making it an environmentally friendly choice.
Key Specifications
| Rating | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 15 | Vdc |
| Collector-Emitter Voltage | VCES | 40 | Vdc |
| Collector-Base Voltage | VCBO | 40 | Vdc |
| Emitter-Base Voltage | VEBO | 4.5 | Vdc |
| Collector Current - Continuous | IC | 200 | mAdc |
| Total Device Dissipation (FR-5 Board, TA = 25°C) | PD | 225 | mW |
| Thermal Resistance, Junction-to-Ambient | RJA | 556 | °C/W |
| Junction and Storage Temperature | TJ, Tstg | -55 to +150 | °C |
| DC Current Gain (IC = 10 mA, VCE = 1.0 V) | hFE | 40 - 120 | - |
| Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 1.0 mA) | VCE(sat) | 0.25 | Vdc |
| Base-Emitter Saturation Voltage (IC = 10 mA, IB = 1.0 mA) | VBE(sat) | 0.7 - 1.02 | Vdc |
| Storage Time (IB1 = IB2 = IC = 10 mA) | ts | 5.0 - 13 | ns |
| Turn-On Time (VCC = 3.0 V, IC = 10 mA, IB1 = 3.0 mA) | ton | 8.0 - 12 | ns |
| Turn-Off Time (VCC = 3.0 V, IC = 10 mA, IB1 = 3.0 mA, IB2 = 1.5 mA) | toff | 10 - 18 | ns |
Key Features
- AEC-Q101 qualified and PPAP capable, ensuring high reliability for automotive and industrial applications.
- Pb-free, halogen-free, and RoHS compliant, making it environmentally friendly.
- S Prefix for automotive and other applications requiring unique site and control change requirements.
- High DC current gain (hFE) ranging from 40 to 120.
- Low collector-emitter saturation voltage (VCE(sat)) and base-emitter saturation voltage (VBE(sat)).
- Fast switching times with storage time (ts) of 5.0 - 13 ns, turn-on time (ton) of 8.0 - 12 ns, and turn-off time (toff) of 10 - 18 ns.
Applications
- Automotive systems: Suitable for various automotive applications due to its AEC-Q101 qualification and PPAP capability.
- Industrial control systems: Used in industrial control circuits where high reliability and fast switching times are required.
- Power management: Can be used in power management circuits due to its low saturation voltages and high current gain.
- Consumer electronics: Applicable in consumer electronics where small size and high performance are necessary.
Q & A
- What is the collector-emitter voltage rating of the SMMBT2369LT1G transistor?
The collector-emitter voltage rating (VCEO) is 15 Vdc, and the collector-emitter voltage rating (VCES) is 40 Vdc.
- Is the SMMBT2369LT1G transistor RoHS compliant?
- What is the DC current gain (hFE) of the SMMBT2369LT1G transistor?
The DC current gain (hFE) ranges from 40 to 120.
- What are the typical turn-on and turn-off times for the SMMBT2369LT1G transistor?
The turn-on time (ton) is typically between 8.0 and 12 ns, and the turn-off time (toff) is typically between 10 and 18 ns.
- What is the junction temperature range for the SMMBT2369LT1G transistor?
The junction temperature range is -55°C to +150°C.
- Is the SMMBT2369LT1G transistor suitable for automotive applications?
- What is the package type of the SMMBT2369LT1G transistor?
The transistor is packaged in a SOT-23 case).
- What are the key features of the SMMBT2369LT1G transistor?
- Can the SMMBT2369LT1G transistor be used in industrial control systems?
- What is the collector current rating of the SMMBT2369LT1G transistor?
