Overview
The MMBT2369ALT1G is a high-performance NPN silicon switching transistor produced by onsemi. This device is designed for a wide range of applications, including automotive and other sectors that require stringent quality and reliability standards. It is AEC-Q101 qualified and PPAP capable, ensuring it meets the rigorous demands of automotive and industrial environments. The transistor is packaged in a Pb-free, halogen-free, and RoHS-compliant SOT-23 case, making it suitable for modern electronic designs that prioritize environmental sustainability.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 15 | Vdc |
| Collector-Emitter Voltage | VCES | 40 | Vdc |
| Collector-Base Voltage | VCBO | 40 | Vdc |
| Emitter-Base Voltage | VEBO | 4.5 | Vdc |
| Collector Current - Continuous | IC | 200 | mAdc |
| Thermal Resistance, Junction-to-Ambient | RθJA | 417 | °C/W |
| Junction and Storage Temperature | TJ, Tstg | -55 to +150 | °C |
| Nominal Transition Frequency (fT) | fT | 500 | MHz |
Key Features
- AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
- Pb-free, halogen-free, and RoHS-compliant, aligning with modern environmental standards.
- High collector-emitter voltage (VCEO) of 15 Vdc and collector-emitter voltage (VCES) of 40 Vdc.
- Continuous collector current (IC) of 200 mAdc.
- Low thermal resistance, junction-to-ambient (RθJA) of 417 °C/W.
- Wide junction and storage temperature range of -55 to +150 °C.
- High nominal transition frequency (fT) of 500 MHz, suitable for high-frequency applications.
Applications
- Automotive systems: Due to its AEC-Q101 qualification, it is ideal for use in automotive electronics such as power management, signal switching, and control circuits.
- Industrial control systems: Suitable for high-reliability applications in industrial automation, including motor control, power supplies, and signal processing.
- Consumer electronics: Can be used in various consumer electronic devices requiring high-performance switching transistors, such as audio equipment, home appliances, and gaming consoles.
- Telecommunications: Applicable in telecommunications equipment for signal switching and amplification.
Q & A
- What is the collector-emitter voltage (VCEO) of the MMBT2369ALT1G transistor?
The collector-emitter voltage (VCEO) of the MMBT2369ALT1G transistor is 15 Vdc.
- Is the MMBT2369ALT1G transistor RoHS compliant?
Yes, the MMBT2369ALT1G transistor is Pb-free, halogen-free, and RoHS compliant.
- What is the continuous collector current (IC) rating of the MMBT2369ALT1G?
The continuous collector current (IC) rating of the MMBT2369ALT1G is 200 mAdc.
- What is the thermal resistance, junction-to-ambient (RθJA), of the MMBT2369ALT1G?
The thermal resistance, junction-to-ambient (RθJA), of the MMBT2369ALT1G is 417 °C/W.
- What is the nominal transition frequency (fT) of the MMBT2369ALT1G?
The nominal transition frequency (fT) of the MMBT2369ALT1G is 500 MHz.
- What are the junction and storage temperature ranges for the MMBT2369ALT1G?
The junction and storage temperature ranges for the MMBT2369ALT1G are -55 to +150 °C.
- Is the MMBT2369ALT1G suitable for automotive applications?
Yes, the MMBT2369ALT1G is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications.
- What package type is the MMBT2369ALT1G available in?
The MMBT2369ALT1G is available in a SOT-23 package.
- What is the collector-emitter breakdown voltage (V(BR)CEO) of the MMBT2369ALT1G?
The collector-emitter breakdown voltage (V(BR)CEO) of the MMBT2369ALT1G is 15 Vdc.
- What are the typical turn-on and turn-off times for the MMBT2369ALT1G?
The typical turn-on time (ton) is 8-12 ns, and the typical turn-off time (toff) is 10-18 ns.
