SMMBD301LT3G
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onsemi SMMBD301LT3G

Manufacturer No:
SMMBD301LT3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 30V 200MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The SMMBD301LT3G is a silicon hot-carrier diode, also known as a Schottky Barrier Diode, produced by onsemi. This device is designed primarily for high-efficiency UHF and VHF detector applications and is also adaptable to various fast switching RF and digital applications. It is available in a surface mount package, specifically the SOT-23 (TO-236) package, making it suitable for low-cost, high-volume consumer and industrial/commercial requirements.

Key Specifications

Rating Symbol Value Unit
Reverse Voltage VR 30 V
Forward Current (DC) IF 200 (Max) mA
Total Device Dissipation @ TA = 25°C PF 200 mW
Derate above 25°C 2.0 mW/°C
Operating Junction Temperature Range TJ −55 to +125 °C
Storage Temperature Range Tstg −55 to +150 °C
Reverse Breakdown Voltage (IR = 10 μA) V(BR)R 30 V
Total Capacitance (VR = 15 V, f = 1.0 MHz) CT 0.9 to 1.5 pF
Reverse Leakage (VR = 25 V) IR 13 to 200 nAdc
Forward Voltage (IF = 1.0 mA DC) VF 0.38 to 0.45 Vdc
Forward Voltage (IF = 10 mA DC) VF 0.52 to 0.6 Vdc

Key Features

  • Extremely Low Minority Carrier Lifetime − 15 ps (Typ)
  • Very Low Capacitance − 1.5 pF (Max) @ VR = 15 V
  • Low Reverse Leakage − IR = 13 nAdc (Typ)
  • Pb-Free, Halogen Free/BFR Free and RoHS Compliant
  • AEC-Q101 Qualified and PPAP Capable for automotive and other applications requiring unique site and control change requirements

Applications

The SMMBD301LT3G is primarily used in high-efficiency UHF and VHF detector applications. It is also suitable for various fast switching RF and digital applications. These include:

  • Detector circuits in UHF and VHF systems
  • Fast switching RF applications
  • Digital applications requiring low capacitance and fast switching times
  • Automotive and industrial/commercial applications due to its AEC-Q101 qualification and PPAP capability

Q & A

  1. What is the primary application of the SMMBD301LT3G?

    The primary application of the SMMBD301LT3G is in high-efficiency UHF and VHF detector applications.

  2. What package types are available for the SMMBD301LT3G?

    The SMMBD301LT3G is available in the SOT-23 (TO-236) surface mount package.

  3. What is the maximum reverse voltage rating for the SMMBD301LT3G?

    The maximum reverse voltage rating is 30 V.

  4. What is the typical minority carrier lifetime of the SMMBD301LT3G?

    The typical minority carrier lifetime is 15 ps.

  5. Is the SMMBD301LT3G RoHS compliant?
  6. What is the maximum forward current rating for the SMMBD301LT3G?

    The maximum forward current rating is 200 mA.

  7. What is the operating junction temperature range for the SMMBD301LT3G?

    The operating junction temperature range is −55 to +125°C.

  8. Is the SMMBD301LT3G suitable for automotive applications?
  9. What is the typical reverse leakage current at 25 V?

    The typical reverse leakage current at 25 V is 13 nAdc.

  10. What is the typical forward voltage at 1 mA DC?

    The typical forward voltage at 1 mA DC is 0.38 to 0.45 Vdc.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):30 V
Current - Average Rectified (Io):200mA (DC)
Voltage - Forward (Vf) (Max) @ If:600 mV @ 10 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:200 nA @ 25 V
Capacitance @ Vr, F:1.5pF @ 15V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
Operating Temperature - Junction:-55°C ~ 125°C
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In Stock

$0.37
1,591

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