SBRB20200CTT4G
  • Share:

onsemi SBRB20200CTT4G

Manufacturer No:
SBRB20200CTT4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE ARRAY SCHOTTKY 200V D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The SBRB20200CTT4G is a high-performance dual Schottky rectifier produced by onsemi. This device utilizes Schottky Barrier technology with a platinum barrier metal, making it ideal for high-frequency switching power supplies and converters. It is designed to handle up to 200 V blocking voltage and offers improved Schottky performance at frequencies ranging from 250 kHz to 5.0 MHz.

Key Specifications

Rating Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM 200 V
Working Peak Reverse Voltage VRWM 200 V
DC Blocking Voltage VR 200 V
Average Rectified Forward Current (Per Leg) IF(AV) 10 A
Average Rectified Forward Current (Per Device) IF(AV) 20 A
Peak Repetitive Forward Current (Per Leg) IFRM 20 A
Nonrepetitive Peak Surge Current IFSM 150 A
Peak Repetitive Reverse Surge Current IRRM 1.0 A
Storage Temperature Range Tstg −65 to +175 °C
Operating Junction Temperature TJ −65 to +150 °C
Voltage Rate of Change (Rated VR) dv/dt 10,000 V/μs
Thermal Resistance, Junction-to-Case RJC 2.0 °C/W
Maximum Instantaneous Forward Voltage (IF = 10 A, TC = 25°C) VF 0.9 V
Maximum Instantaneous Reverse Current (Rated dc Voltage, TC = 25°C) IR 1.0 mA
Capacitance (VR = −5.0 V, TC = 25°C, Frequency = 1.0 MHz) CT 500 pF

Key Features

  • 200 V Blocking Voltage
  • Low Forward Voltage Drop
  • Guardring for Stress Protection and High dv/dt Capability (10,000 V/μs)
  • Dual Diode Construction − Terminals 1 and 3 Must be Connected for Parallel Operation at Full Rating
  • AEC-Q101 Qualified and PPAP Capable
  • SBRB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements
  • All Packages are Pb-Free
  • Corrosion Resistant and Readily Solderable Terminal Leads
  • ESD Rating: Human Body Model = 3B, Machine Model = C

Applications

The SBRB20200CTT4G is suitable for various high-frequency applications, including:

  • Switching power supplies
  • Converters with up to 48 V outputs
  • Automotive systems requiring AEC-Q101 qualification
  • Other high-frequency switching circuits where low forward voltage drop and high dv/dt capability are essential

Q & A

  1. What is the peak repetitive reverse voltage of the SBRB20200CTT4G?

    The peak repetitive reverse voltage is 200 V.

  2. What is the average rectified forward current per leg of the SBRB20200CTT4G?

    The average rectified forward current per leg is 10 A.

  3. What is the maximum instantaneous forward voltage at 10 A and 25°C?

    The maximum instantaneous forward voltage at 10 A and 25°C is 0.9 V.

  4. What is the thermal resistance, junction-to-case, of the SBRB20200CTT4G?

    The thermal resistance, junction-to-case, is 2.0 °C/W.

  5. Is the SBRB20200CTT4G AEC-Q101 qualified?

    Yes, the SBRB20200CTT4G is AEC-Q101 qualified.

  6. What is the storage temperature range for the SBRB20200CTT4G?

    The storage temperature range is −65 to +175 °C.

  7. What is the operating junction temperature range for the SBRB20200CTT4G?

    The operating junction temperature range is −65 to +150 °C.

  8. What is the voltage rate of change (dv/dt) capability of the SBRB20200CTT4G?

    The voltage rate of change (dv/dt) capability is 10,000 V/μs.

  9. Is the SBRB20200CTT4G Pb-Free?

    Yes, the SBRB20200CTT4G is Pb-Free.

  10. What is the ESD rating of the SBRB20200CTT4G?

    The ESD rating is Human Body Model = 3B, Machine Model = C.

Product Attributes

Diode Configuration:1 Pair Common Cathode
Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io) (per Diode):10A
Voltage - Forward (Vf) (Max) @ If:900 mV @ 10 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:1 mA @ 200 V
Operating Temperature - Junction:-65°C ~ 150°C
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:D²PAK
0 Remaining View Similar

In Stock

$2.01
99

Please send RFQ , we will respond immediately.

Same Series
MBRB20200CTT4G
MBRB20200CTT4G
DIODE ARRAY SCHOTTKY 200V D2PAK
SBRB20200CTT4G
SBRB20200CTT4G
DIODE ARRAY SCHOTTKY 200V D2PAK

Related Product By Categories

BAT54C,215
BAT54C,215
Nexperia USA Inc.
DIODE ARRAY SCHOTTKY 30V SOT23
BAT54A/DG/B4215
BAT54A/DG/B4215
NXP USA Inc.
RECTIFIER DIODE, SCHOTTKY
BAS40AW-AU_R1_000A1
BAS40AW-AU_R1_000A1
Panjit International Inc.
SOT-323, SKY
BAS16VY,115
BAS16VY,115
Nexperia USA Inc.
DIODE ARRAY GP 100V 200MA 6TSSOP
BAT30CWFILM
BAT30CWFILM
STMicroelectronics
DIODE ARRAY SCHOTTKY 30V SOT323
MBRD640CTT4G
MBRD640CTT4G
onsemi
DIODE ARRAY SCHOTTKY 40V 3A DPAK
BAV99BRW-TP
BAV99BRW-TP
Micro Commercial Co
DIODE ARRAY GP 75V 150MA SOT363
BAS40-04E6327
BAS40-04E6327
Infineon Technologies
BAS40 - HIGH SPEED SWITCHING, CL
BYV42E-200,127
BYV42E-200,127
WeEn Semiconductors
DIODE ARRAY GP 200V 30A TO220AB
STPS30150CG
STPS30150CG
STMicroelectronics
DIODE ARRAY SCHOTTKY 150V D2PAK
BAW56TT1
BAW56TT1
onsemi
DIODE ARRAY GP 70V 200MA SC75
BAV 99W H6433
BAV 99W H6433
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT323

Related Product By Brand

SBAS16WT1G
SBAS16WT1G
onsemi
DIODE GEN PURP 75V 200MA SC70
MBRS140T3H
MBRS140T3H
onsemi
DIODE SCHOTTKY
FDB024N08BL7
FDB024N08BL7
onsemi
MOSFET N-CH 80V 120A TO263-7
NTD3055L170-1G
NTD3055L170-1G
onsemi
MOSFET N-CH 60V 9A IPAK
BMS3004-1EX
BMS3004-1EX
onsemi
MOSFET P-CH TO220-3
BSS138LT7G
BSS138LT7G
onsemi
MOSFET N-CH 50V 200MA SOT23-3
MC74VHC1G32DTT1G
MC74VHC1G32DTT1G
onsemi
IC GATE OR 1CH 2-INP 5TSOP
MC74VHC04DTR2G
MC74VHC04DTR2G
onsemi
IC INVERTER 6CH 1-INP 14TSSOP
ADP3110AKRZ
ADP3110AKRZ
onsemi
IC GATE DRVR HALF-BRIDGE 8SOIC
CAT4008Y-T2
CAT4008Y-T2
onsemi
IC LED DRVR LINEAR 80MA 16TSSOP
NCP432BISNT1G
NCP432BISNT1G
onsemi
IC VREF SHUNT ADJ 0.5% SOT23-3
FODM217CR2V
FODM217CR2V
onsemi
OPTOCOUPLER PHOTOTRANS MFP4