Overview
The SBRB20200CTT4G is a high-performance dual Schottky rectifier produced by onsemi. This device utilizes Schottky Barrier technology with a platinum barrier metal, making it ideal for high-frequency switching power supplies and converters. It is designed to handle up to 200 V blocking voltage and offers improved Schottky performance at frequencies ranging from 250 kHz to 5.0 MHz.
Key Specifications
Rating | Symbol | Value | Unit |
---|---|---|---|
Peak Repetitive Reverse Voltage | VRRM | 200 | V |
Working Peak Reverse Voltage | VRWM | 200 | V |
DC Blocking Voltage | VR | 200 | V |
Average Rectified Forward Current (Per Leg) | IF(AV) | 10 | A |
Average Rectified Forward Current (Per Device) | IF(AV) | 20 | A |
Peak Repetitive Forward Current (Per Leg) | IFRM | 20 | A |
Nonrepetitive Peak Surge Current | IFSM | 150 | A |
Peak Repetitive Reverse Surge Current | IRRM | 1.0 | A |
Storage Temperature Range | Tstg | −65 to +175 | °C |
Operating Junction Temperature | TJ | −65 to +150 | °C |
Voltage Rate of Change (Rated VR) | dv/dt | 10,000 | V/μs |
Thermal Resistance, Junction-to-Case | RJC | 2.0 | °C/W |
Maximum Instantaneous Forward Voltage (IF = 10 A, TC = 25°C) | VF | 0.9 | V |
Maximum Instantaneous Reverse Current (Rated dc Voltage, TC = 25°C) | IR | 1.0 | mA |
Capacitance (VR = −5.0 V, TC = 25°C, Frequency = 1.0 MHz) | CT | 500 | pF |
Key Features
- 200 V Blocking Voltage
- Low Forward Voltage Drop
- Guardring for Stress Protection and High dv/dt Capability (10,000 V/μs)
- Dual Diode Construction − Terminals 1 and 3 Must be Connected for Parallel Operation at Full Rating
- AEC-Q101 Qualified and PPAP Capable
- SBRB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements
- All Packages are Pb-Free
- Corrosion Resistant and Readily Solderable Terminal Leads
- ESD Rating: Human Body Model = 3B, Machine Model = C
Applications
The SBRB20200CTT4G is suitable for various high-frequency applications, including:
- Switching power supplies
- Converters with up to 48 V outputs
- Automotive systems requiring AEC-Q101 qualification
- Other high-frequency switching circuits where low forward voltage drop and high dv/dt capability are essential
Q & A
- What is the peak repetitive reverse voltage of the SBRB20200CTT4G?
The peak repetitive reverse voltage is 200 V.
- What is the average rectified forward current per leg of the SBRB20200CTT4G?
The average rectified forward current per leg is 10 A.
- What is the maximum instantaneous forward voltage at 10 A and 25°C?
The maximum instantaneous forward voltage at 10 A and 25°C is 0.9 V.
- What is the thermal resistance, junction-to-case, of the SBRB20200CTT4G?
The thermal resistance, junction-to-case, is 2.0 °C/W.
- Is the SBRB20200CTT4G AEC-Q101 qualified?
Yes, the SBRB20200CTT4G is AEC-Q101 qualified.
- What is the storage temperature range for the SBRB20200CTT4G?
The storage temperature range is −65 to +175 °C.
- What is the operating junction temperature range for the SBRB20200CTT4G?
The operating junction temperature range is −65 to +150 °C.
- What is the voltage rate of change (dv/dt) capability of the SBRB20200CTT4G?
The voltage rate of change (dv/dt) capability is 10,000 V/μs.
- Is the SBRB20200CTT4G Pb-Free?
Yes, the SBRB20200CTT4G is Pb-Free.
- What is the ESD rating of the SBRB20200CTT4G?
The ESD rating is Human Body Model = 3B, Machine Model = C.