MBRB20200CTT4G
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onsemi MBRB20200CTT4G

Manufacturer No:
MBRB20200CTT4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE ARRAY SCHOTTKY 200V D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MBRB20200CTT4G is a dual Schottky rectifier produced by onsemi, designed for high-frequency switching power supplies and converters. This device utilizes Schottky Barrier technology with a platinum barrier metal, offering improved performance at frequencies ranging from 250 kHz to 5.0 MHz. It is particularly suited for applications requiring high blocking voltages and low forward voltage drops.

Key Specifications

Rating Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM 200 V
DC Blocking Voltage VR 200 V
Average Rectified Forward Current (Per Leg) IF(AV) 10 A
Average Rectified Forward Current (Per Device) IF(AV) 20 A
Peak Repetitive Forward Current (Per Leg) IFRM 20 A
Nonrepetitive Peak Surge Current IFSM 150 A
Storage Temperature Range Tstg −65 to +175 °C
Operating Junction Temperature TJ −65 to +150 °C
Voltage Rate of Change (Rated VR) dv/dt 10,000 V/μs
Thermal Resistance, Junction-to-Case RJC 2.0 °C/W
Maximum Instantaneous Forward Voltage (IF = 10 A, TC = 25°C) VF 0.9 V
Maximum Instantaneous Reverse Current (Rated dc Voltage, TC = 25°C) IR 1.0 mA
Capacitance (VR = −5.0 V, TC = 25°C, Frequency = 1.0 MHz) CT 500 pF

Key Features

  • 200 V Blocking Voltage: The device can block up to 200 V, making it suitable for high-voltage applications.
  • Low Forward Voltage Drop: Offers low forward voltage drops, which is beneficial for reducing power losses.
  • Guardring for Stress Protection and High dv/dt Capability: Provides protection against stress and supports high voltage rate of change (10,000 V/μs).
  • Dual Diode Construction: Features a dual diode configuration with terminals 1 and 3 that must be connected for parallel operation at full rating.
  • AEC-Q101 Qualified and PPAP Capable: Meets automotive quality standards and is capable of Production Part Approval Process (PPAP).
  • Pb-Free Package: All packages are lead-free, complying with environmental regulations.
  • Corrosion Resistant and Solderable Leads: The device has corrosion-resistant external surfaces and readily solderable terminal leads.

Applications

  • High-Frequency Switching Power Supplies: Ideal for use in switching power supplies and converters with up to 48 V outputs.
  • Automotive Systems: Qualified to AEC-Q101 standards, making it suitable for automotive applications.
  • Industrial Power Systems: Can be used in various industrial power systems requiring high reliability and performance.
  • Renewable Energy Systems: Suitable for applications in renewable energy systems such as solar and wind power.

Q & A

  1. What is the peak repetitive reverse voltage of the MBRB20200CTT4G?

    The peak repetitive reverse voltage is 200 V.

  2. What is the average rectified forward current per leg of the MBRB20200CTT4G?

    The average rectified forward current per leg is 10 A.

  3. What is the maximum instantaneous forward voltage at 10 A and 25°C?

    The maximum instantaneous forward voltage at 10 A and 25°C is 0.9 V.

  4. What is the thermal resistance, junction-to-case, of the MBRB20200CTT4G?

    The thermal resistance, junction-to-case, is 2.0 °C/W.

  5. Is the MBRB20200CTT4G AEC-Q101 qualified?
  6. What is the storage temperature range of the MBRB20200CTT4G?

    The storage temperature range is −65 to +175 °C.

  7. What is the operating junction temperature range of the MBRB20200CTT4G?

    The operating junction temperature range is −65 to +150 °C.

  8. What is the voltage rate of change (dv/dt) capability of the MBRB20200CTT4G?

    The voltage rate of change (dv/dt) capability is 10,000 V/μs.

  9. Is the MBRB20200CTT4G Pb-free?
  10. What is the typical capacitance of the MBRB20200CTT4G at 25°C and 1 MHz?

    The typical capacitance is 500 pF.

Product Attributes

Diode Configuration:1 Pair Common Cathode
Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io) (per Diode):10A
Voltage - Forward (Vf) (Max) @ If:900 mV @ 10 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:1 mA @ 200 V
Operating Temperature - Junction:-65°C ~ 150°C
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:D²PAK
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Same Series
MBRB20200CTT4G
MBRB20200CTT4G
DIODE ARRAY SCHOTTKY 200V D2PAK
SBRB20200CTT4G
SBRB20200CTT4G
DIODE ARRAY SCHOTTKY 200V D2PAK

Similar Products

Part Number MBRB20200CTT4G MBRB20100CTT4G
Manufacturer onsemi onsemi
Product Status Active Active
Diode Configuration 1 Pair Common Cathode 1 Pair Common Cathode
Diode Type Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 200 V 100 V
Current - Average Rectified (Io) (per Diode) 10A 10A
Voltage - Forward (Vf) (Max) @ If 900 mV @ 10 A 850 mV @ 10 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - -
Current - Reverse Leakage @ Vr 1 mA @ 200 V 100 µA @ 100 V
Operating Temperature - Junction -65°C ~ 150°C -65°C ~ 175°C
Mounting Type Surface Mount Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D²PAK D²PAK

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