Overview
The SBF720T1G is an NPN silicon transistor produced by onsemi. This device is part of the BF720T1G, SBF720T1G, and BF720T3G series, which are designed for various applications, including automotive and other sectors requiring stringent quality and reliability standards. The transistor is AEC-Q101 qualified and PPAP capable, ensuring it meets the rigorous demands of automotive and similar environments. It is also Pb-free, halogen-free, and RoHS compliant, aligning with modern environmental standards.
Key Specifications
| Rating | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 300 | Vdc |
| Collector-Base Voltage | VCBO | 300 | Vdc |
| Collector-Emitter Voltage (with RBE) | VCER | 300 | Vdc |
| Emitter-Base Voltage | VEBO | 5.0 | Vdc |
| Collector Current | IC | 100 | mAdc |
| Total Power Dissipation up to TA = 25°C | PD | 1.5 | W |
| Storage Temperature Range | Tstg | -65 to +150 | °C |
| Junction Temperature | TJ | 150 | °C |
| Thermal Resistance, Junction-to-Ambient | RJA | 83.3 | °C/W |
Key Features
- AEC-Q101 Qualified and PPAP Capable, ensuring high reliability and quality for automotive and similar applications.
- S Prefix for automotive and other applications requiring unique site and control change requirements.
- Pb-free, halogen-free, and RoHS compliant, making it environmentally friendly.
- High collector-emitter voltage (VCEO) of 300 Vdc, suitable for high-voltage applications.
- Low collector-emitter saturation voltage (VCE(sat)) of 0.6 Vdc, reducing power losses.
- Current-gain bandwidth product (fT) of 60 MHz, indicating good high-frequency performance.
Applications
The SBF720T1G transistor is suitable for a variety of applications, including:
- Automotive systems: Due to its AEC-Q101 qualification, it is ideal for use in automotive electronics.
- Industrial control systems: Its high reliability and robust specifications make it suitable for industrial control and automation.
- Power management: The transistor's high collector-emitter voltage and current handling capabilities make it useful in power management circuits.
- General-purpose switching and amplification: It can be used in various switching and amplification circuits where high reliability and performance are required.
Q & A
- What is the collector-emitter voltage rating of the SBF720T1G transistor?
The collector-emitter voltage (VCEO) rating is 300 Vdc.
- Is the SBF720T1G transistor RoHS compliant?
Yes, the SBF720T1G transistor is Pb-free, halogen-free, and RoHS compliant.
- What is the maximum collector current of the SBF720T1G transistor?
The maximum collector current (IC) is 100 mA.
- What is the thermal resistance, junction-to-ambient, of the SBF720T1G transistor?
The thermal resistance, junction-to-ambient (RJA), is 83.3 °C/W.
- What is the current-gain bandwidth product (fT) of the SBF720T1G transistor?
The current-gain bandwidth product (fT) is 60 MHz.
- Is the SBF720T1G transistor suitable for automotive applications?
Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and similar applications.
- What is the storage temperature range for the SBF720T1G transistor?
The storage temperature range (Tstg) is -65 to +150 °C.
- What is the junction temperature (TJ) of the SBF720T1G transistor?
The junction temperature (TJ) is 150 °C.
- What is the collector-emitter saturation voltage (VCE(sat)) of the SBF720T1G transistor?
The collector-emitter saturation voltage (VCE(sat)) is 0.6 Vdc.
- Is the SBF720T1G transistor still recommended for new designs?
No, the SBF720T1G transistor is discontinued and not recommended for new designs. Please contact an onsemi representative for alternative options.
