Overview
The RHRP8120-F102 is a hyperfast diode produced by onsemi, designed for high-performance applications requiring fast recovery times and low power loss. This diode features a silicon nitride passivated ion-implanted epitaxial planar construction, making it suitable for use in various power switching circuits and switching power supplies. With its soft recovery characteristics and low stored charge, the RHRP8120-F102 minimizes ringing and electrical noise, enhancing the overall efficiency of the system.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Peak Repetitive Reverse Voltage (VRRM) | 1200 | V |
| Working Peak Reverse Voltage (VRWM) | 1200 | V |
| DC Blocking Voltage (VR) | 1200 | V |
| Average Rectified Forward Current (IF(AV)) | 8 | A |
| Repetitive Peak Surge Current (IFRM) | 16 | A |
| Nonrepetitive Peak Surge Current (IFSM) | 100 | A |
| Maximum Power Dissipation (PD) | 75 | W |
| Avalanche Energy (EAVL) | 20 | mJ |
| Operating and Storage Temperature (TSTG, TJ) | -65 to 175 | °C |
| Forward Voltage (VF) | 3.2 | V @ 8 A |
| Reverse Recovery Time (trr) | 70 | ns |
| Reverse Recovery Charge (Qrr) | 165 | nC |
| Junction Capacitance (CJ) | 25 | pF @ VR = 10 V |
| Thermal Resistance Junction to Case (RθJC) | 2 | °C/W |
Key Features
- Hyperfast recovery time of 70 ns, ensuring minimal power loss and reduced electrical noise.
- Soft recovery characteristics, similar to ultrafast diodes, which help in minimizing ringing in power switching circuits.
- High reverse voltage rating of 1200 V, making it suitable for high-voltage applications.
- Avalanche energy rated, providing robustness against transient voltages.
- RoHS compliant, ensuring environmental sustainability.
- Silicon nitride passivated ion-implanted epitaxial planar construction for high reliability.
- Wide operating temperature range from -65°C to 175°C.
Applications
- Switching power supplies: Ideal for use in various switching power supply configurations due to its fast recovery and low stored charge.
- Power switching circuits: Suitable for applications requiring fast switching and minimal power loss.
- General purpose: Can be used in a variety of general-purpose rectification and clamping applications.
Q & A
- What is the peak repetitive reverse voltage of the RHRP8120-F102?
The peak repetitive reverse voltage (VRRM) is 1200 V.
- What is the average rectified forward current rating of the RHRP8120-F102?
The average rectified forward current (IF(AV)) is 8 A.
- What is the reverse recovery time of the RHRP8120-F102?
The reverse recovery time (trr) is 70 ns.
- Is the RHRP8120-F102 RoHS compliant?
- What is the maximum power dissipation of the RHRP8120-F102?
The maximum power dissipation (PD) is 75 W.
- What is the operating temperature range of the RHRP8120-F102?
The operating and storage temperature range is from -65°C to 175°C.
- What type of construction does the RHRP8120-F102 have?
The RHRP8120-F102 has a silicon nitride passivated ion-implanted epitaxial planar construction.
- What are some common applications for the RHRP8120-F102?
- What is the thermal resistance junction to case (RθJC) of the RHRP8120-F102?
The thermal resistance junction to case (RθJC) is 2 °C/W.
- What is the package type of the RHRP8120-F102?
The package type is TO-220AC.
