RHRP8120
  • Share:

onsemi RHRP8120

Manufacturer No:
RHRP8120
Manufacturer:
onsemi
Package:
Tube
Description:
DIODE GEN PURP 1200V 8A TO220-2L
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The RHRP8120 is a hyperfast diode produced by onsemi, characterized by its soft recovery characteristics and silicon nitride passivated ion-implanted epitaxial planar construction. This diode is designed for use as freewheeling/clamping diodes and in various switching power supplies and other power switching applications. Its low stored charge and hyperfast soft recovery minimize ringing and electrical noise in power switching circuits, thereby reducing power loss in the switching transistors.

Key Specifications

Parameter Value Conditions
Current - Average Rectified (Io) 8 A
Voltage - DC Reverse (Vr) (Max) 1200 V
Voltage - Forward (Vf) (Max) @ If 3.2 V @ 8 A Tc = 25°C
Reverse Recovery Time (trr) 70 ns @ If = 8 A
Current - Reverse Leakage @ Vr 100 µA @ 1200 V
Operating Temperature - Junction -65°C ~ 175°C
Package / Case TO-220-2
Avalanche Energy Rated Yes
RoHS Compliant Yes

Key Features

  • Hyperfast recovery time (trr = 70 ns @ If = 8 A)
  • Low stored charge and hyperfast soft recovery to minimize ringing and electrical noise
  • Max forward voltage, Vf = 3.2 V @ Tc = 25°C
  • 1200 V reverse voltage and high reliability
  • Avalanche energy rated
  • RoHS compliant

Applications

  • Switching power supplies
  • Power switching circuits
  • General purpose applications
  • Uninterruptible Power Supply (UPS)

Q & A

  1. What is the RHRP8120 diode used for?

    The RHRP8120 is used as freewheeling/clamping diodes and in various switching power supplies and other power switching applications.

  2. What is the reverse recovery time of the RHRP8120 diode?

    The reverse recovery time (trr) of the RHRP8120 diode is 70 ns at a forward current (If) of 8 A.

  3. What is the maximum forward voltage of the RHRP8120 diode?

    The maximum forward voltage (Vf) of the RHRP8120 diode is 3.2 V at a junction temperature (Tc) of 25°C.

  4. What is the maximum reverse voltage of the RHRP8120 diode?

    The maximum reverse voltage (Vr) of the RHRP8120 diode is 1200 V.

  5. Is the RHRP8120 diode RoHS compliant?

    Yes, the RHRP8120 diode is RoHS compliant.

  6. What is the package type of the RHRP8120 diode?

    The RHRP8120 diode is packaged in a TO-220-2 case.

  7. What are the operating temperature ranges for the RHRP8120 diode?

    The operating temperature range for the junction of the RHRP8120 diode is -65°C to 175°C.

  8. Is the RHRP8120 diode avalanche energy rated?

    Yes, the RHRP8120 diode is avalanche energy rated.

  9. What are some common applications of the RHRP8120 diode?

    The RHRP8120 diode is commonly used in switching power supplies, power switching circuits, and general purpose applications, including uninterruptible power supplies (UPS).

  10. How does the RHRP8120 diode reduce power loss in switching transistors?

    The RHRP8120 diode reduces power loss in switching transistors by minimizing ringing and electrical noise due to its low stored charge and hyperfast soft recovery characteristics.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1200 V
Current - Average Rectified (Io):8A
Voltage - Forward (Vf) (Max) @ If:3.2 V @ 8 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):70 ns
Current - Reverse Leakage @ Vr:100 µA @ 1200 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:TO-220-2L
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

$1.38
458

Please send RFQ , we will respond immediately.

Same Series
RHRP8120-F102
RHRP8120-F102
DIODE GEN PURP 1.2KV 8A TO220-2

Related Product By Categories

1N4007GP-AQ
1N4007GP-AQ
Diotec Semiconductor
DIODE STD DO-41 1000V 1A
PMEG3015EH,115
PMEG3015EH,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 1.5A SOD123F
BAS16H,115
BAS16H,115
Nexperia USA Inc.
DIODE GP 100V 215MA SOD123F
BAS521-7
BAS521-7
Diodes Incorporated
DIODE GEN PURP 300V 250MA SOD523
MBR120LSFT3G
MBR120LSFT3G
onsemi
DIODE SCHOTTKY 20V 1A SOD123L
SMMDL6050T1G
SMMDL6050T1G
onsemi
DIODE GEN PURP 70V 200MA SOD323
BAS16WS-HE3-18
BAS16WS-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 250MA SOD323
MBRS130
MBRS130
Fairchild Semiconductor
RECTIFIER, SCHOTTKY, 1A, 30V
PMEG4010ER-QX
PMEG4010ER-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
FFSB10120A-F085
FFSB10120A-F085
onsemi
1200V 10A AUTO SIC SBD
PMEG6010CEJ/ZLX
PMEG6010CEJ/ZLX
Nexperia USA Inc.
DIODE SCHOTTKY 60V 1A SC90
BAS316/ZLF
BAS316/ZLF
NXP USA Inc.
DIODE GEN PURP 100V 215MA SOD323

Related Product By Brand

BC856BDW1T1G
BC856BDW1T1G
onsemi
TRANS 2PNP 65V 0.1A SC88/SC70-6
MMBTA55LT1G
MMBTA55LT1G
onsemi
TRANS PNP 60V 0.5A SOT23-3
MPSA42G
MPSA42G
onsemi
TRANS NPN 300V 0.5A TO92
NTUD3127CT5G
NTUD3127CT5G
onsemi
MOSFET N/P-CH 20V SOT-963
NVHL025N65S3
NVHL025N65S3
onsemi
MOSFET N-CH 650V 75A TO247-3
2N7002LT3
2N7002LT3
onsemi
MOSFET N-CH 60V 115MA SOT23-3
BSS138LT7G
BSS138LT7G
onsemi
MOSFET N-CH 50V 200MA SOT23-3
FDS4465-G
FDS4465-G
onsemi
MOSFET P-CH 20V 8SOIC
LV8711T-TLM-H
LV8711T-TLM-H
onsemi
IC MTR DRV BIPLR 2.7-5.5V 24SSOP
MC7812BTG
MC7812BTG
onsemi
IC REG LINEAR 12V 1A TO220AB
MC79L12ACPG
MC79L12ACPG
onsemi
IC REG LINEAR -12V 100MA TO92-3
NCP163AFCT280T2G
NCP163AFCT280T2G
onsemi
IC REG LINEAR 2.8V 250MA 4WLCSP