NSS40302PDR2G
  • Share:

onsemi NSS40302PDR2G

Manufacturer No:
NSS40302PDR2G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN/PNP 40V 3A 8SOIC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NSS40302PDR2G is a complementary bipolar junction transistor (BJT) from ON Semiconductor's e2PowerEdge family. These surface mount devices are designed to feature ultra-low saturation voltage (VCE(sat)) and high current gain capability, making them ideal for low voltage, high speed switching applications where efficient energy control is crucial.

Key Specifications

CharacteristicSymbolMax UnitNPNPNP
Collector-Emitter VoltageVCEOVdc40-40
Collector-Base VoltageVCBOVdc40-40
Emitter-Base VoltageVEBOVdc6.0-7.0
Collector Current - ContinuousICA3.0-3.0
Collector Current - PeakICMA6.0-6.0
Electrostatic DischargeESD-HBM Class 3BMM Class C
Junction and Storage Temperature RangeTJ, Tstg°C-55 to +150-55 to +150

Key Features

  • Ultra-low saturation voltage (VCE(sat)) and high current gain capability.
  • NSV prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.
  • Pb-free, halogen-free/BFR-free, and RoHS compliant.
  • High current gain allows devices to be driven directly from PMU’s control outputs.
  • Linear Gain (Beta) makes them ideal components in analog amplifiers.

Applications

The NSS40302PDR2G is typically used in low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry, they can be used in air bag deployment and in the instrument cluster.

Q & A

  1. What is the maximum collector-emitter voltage for the NSS40302PDR2G? The maximum collector-emitter voltage is 40 V for NPN and -40 V for PNP.
  2. What is the continuous collector current rating? The continuous collector current is 3.0 A for both NPN and PNP.
  3. What is the peak collector current rating? The peak collector current is 6.0 A for both NPN and PNP.
  4. Is the NSS40302PDR2G RoHS compliant? Yes, the device is Pb-free, halogen-free/BFR-free, and RoHS compliant.
  5. What are the typical applications of the NSS40302PDR2G? Typical applications include low voltage motor controls in mass storage products and automotive applications such as air bag deployment and instrument clusters.
  6. What is the junction and storage temperature range? The junction and storage temperature range is -55°C to +150°C.
  7. What is the electrostatic discharge (ESD) rating? The ESD rating is HBM Class 3B and MM Class C.
  8. Can the NSS40302PDR2G be used in analog amplifiers? Yes, the high current gain and linear gain (Beta) make it suitable for use in analog amplifiers.
  9. What package type is the NSS40302PDR2G available in? The device is available in an SOIC-8 package.
  10. Is the NSS40302PDR2G AEC-Q101 qualified? Yes, it is AEC-Q101 qualified and PPAP capable.

Product Attributes

Transistor Type:NPN, PNP
Current - Collector (Ic) (Max):3A
Voltage - Collector Emitter Breakdown (Max):40V
Vce Saturation (Max) @ Ib, Ic:115mV @ 200mA, 2A
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:180 @ 1A, 2V
Power - Max:653mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SOIC
0 Remaining View Similar

In Stock

$1.11
280

Please send RFQ , we will respond immediately.

Same Series
NSS40302PDR2G
NSS40302PDR2G
TRANS NPN/PNP 40V 3A 8SOIC

Similar Products

Part Number NSS40302PDR2G NSV40302PDR2G
Manufacturer onsemi onsemi
Product Status Active Active
Transistor Type NPN, PNP NPN, PNP
Current - Collector (Ic) (Max) 3A 3A
Voltage - Collector Emitter Breakdown (Max) 40V 40V
Vce Saturation (Max) @ Ib, Ic 115mV @ 200mA, 2A 115mV @ 200mA, 2A
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 180 @ 1A, 2V 180 @ 1A, 2V
Power - Max 653mW 653mW
Frequency - Transition 100MHz 100MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC 8-SOIC

Related Product By Categories

MBT2222ADW1T1G
MBT2222ADW1T1G
onsemi
TRANS 2NPN 40V 0.6A SC88/SC70-6
MBT6429DW1T1G
MBT6429DW1T1G
onsemi
TRANS 2NPN 45V 0.2A SC88/SC70-6
BC857RAZ
BC857RAZ
Nexperia USA Inc.
TRANS 2PNP 45V 0.1A DFN1412-6
PBSS2515VS,115
PBSS2515VS,115
Nexperia USA Inc.
TRANS 2NPN 15V 0.5A SOT666
CPH5524-TL-E
CPH5524-TL-E
onsemi
TRANS NPN/PNP 50V 3A 5CPH
BC857SE6327
BC857SE6327
Infineon Technologies
BIPOLAR GEN PURPOSE TRANSISTOR
BC847PNH6433XTMA1
BC847PNH6433XTMA1
Infineon Technologies
TRANS NPN/PNP 45V 0.1A SOT363-6
BC857BDW1T1
BC857BDW1T1
onsemi
TRANS PNP DUAL 45V 100MA SOT-363
BC847BPN-QX
BC847BPN-QX
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP
BCM857BSHF
BCM857BSHF
Nexperia USA Inc.
BCM857BSHF
BC856BSH-QF
BC856BSH-QF
Nexperia USA Inc.
BC856BSH-QF
BC857BSH-QX
BC857BSH-QX
Nexperia USA Inc.
BC857BSH-QX

Related Product By Brand

SBAS16WT1G
SBAS16WT1G
onsemi
DIODE GEN PURP 75V 200MA SC70
SURA8210T3G
SURA8210T3G
onsemi
DIODE GEN PURP 100V 2A SMA
MBRS140T3H
MBRS140T3H
onsemi
DIODE SCHOTTKY
SZMMSZ4V7T1G
SZMMSZ4V7T1G
onsemi
DIODE ZENER 4.7V 500MW SOD123
BZX55C18_T50A
BZX55C18_T50A
onsemi
DIODE ZENER 18V 500MW DO35
NLHV4052DTR2G
NLHV4052DTR2G
onsemi
IC MULTIPLEXER DP4T 16TSSOP
MC100EP16VBDTG
MC100EP16VBDTG
onsemi
IC RCVR/DRVR ECL DIFF 5V 8TSSOP
NCP1076BBP100G
NCP1076BBP100G
onsemi
IC OFFLINE SWITCH FLYBACK 8DIP
MC33153DR2
MC33153DR2
onsemi
IC GATE DRVR LOW-SIDE 8SOIC
CAT4008W-T2
CAT4008W-T2
onsemi
IC LED DRIVER LINEAR 80MA 16SOIC
NCP1623ASNT1G
NCP1623ASNT1G
onsemi
ENHANCED HIGH EFFICIENCY POWER F
NCP163AFCT280T2G
NCP163AFCT280T2G
onsemi
IC REG LINEAR 2.8V 250MA 4WLCSP