Overview
The NSS40301MDR2G is a dual matched 40 V, 6.0 A, low VCE(sat) NPN transistor produced by onsemi. It is part of the onsemi e2PowerEdge family, known for its ultra-low saturation voltage, high current gain, and matched Base/Emitter turn-on voltage. This transistor is designed to provide high performance and reliability in various applications, including current mirrors, differential amplifiers, DC-DC converters, and power management in portable and battery-powered devices.
Key Specifications
| Characteristic | Symbol | Max | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 40 | Vdc |
| Collector-Base Voltage | VCBO | 40 | Vdc |
| Emitter-Base Voltage | VEBO | 6.0 | Vdc |
| Collector Current - Continuous | IC | 3.0 | A |
| Collector Current - Peak | ICM | 6.0 | A |
| Electrostatic Discharge | ESD | HBM Class 3B, MM Class C | |
| Junction and Storage Temperature Range | TJ, Tstg | −55 to +150 | °C |
| Collector-Emitter Saturation Voltage (IC = 1.0 A, IB = 0.100 A) | VCE(sat) | 0.044 | V |
| Base-Emitter Saturation Voltage (IC = 1.0 A, IB = 0.01 A) | VBE(sat) | 0.780 | V |
| Base-Emitter Turn-on Voltage (IC = 0.1 A, VCE = 2.0 V) | VBE(on) | 0.650 | V |
| Cutoff Frequency (IC = 100 mA, VCE = 5.0 V, f = 100 MHz) | fT | 100 | MHz |
Key Features
- Current Gain Matching to 10%
- Base Emitter Voltage Matched to 2 mV
- Pb-Free Device
- Ultra-low saturation voltage VCE(sat)
- High current gain
- High Base/Emitter turn-on voltage
- Ideal for analog amplifiers due to Linear Gain (Beta)
- High reliability and performance in various applications
Applications
The NSS40301MDR2G is suitable for a wide range of applications, including:
- Current mirrors and differential amplifiers
- DC-DC converters and power management in portable and battery-powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras, and MP3 players
- Low voltage motor controls in mass storage products like disc drives and tape drives
- Automotive applications including air bag deployment and instrument clusters
Q & A
- What is the maximum collector-emitter voltage of the NSS40301MDR2G transistor?
The maximum collector-emitter voltage (VCEO) is 40 Vdc.
- What is the continuous collector current rating of the NSS40301MDR2G?
The continuous collector current (IC) is 3.0 A.
- What is the peak collector current rating of the NSS40301MDR2G?
The peak collector current (ICM) is 6.0 A.
- What is the junction and storage temperature range for the NSS40301MDR2G?
The junction and storage temperature range is −55 to +150°C.
- What is the typical collector-emitter saturation voltage of the NSS40301MDR2G?
The typical collector-emitter saturation voltage (VCE(sat)) at IC = 1.0 A and IB = 0.100 A is 0.044 V.
- Is the NSS40301MDR2G a Pb-Free device?
- What are some typical applications of the NSS40301MDR2G transistor?
Typical applications include current mirrors, differential amplifiers, DC-DC converters, and power management in portable and battery-powered devices, as well as automotive and mass storage products.
- What is the cutoff frequency of the NSS40301MDR2G transistor?
The cutoff frequency (fT) at IC = 100 mA, VCE = 5.0 V, and f = 100 MHz is 100 MHz.
- How is the current gain of the NSS40301MDR2G matched?
The current gain is matched to 10% between the two transistors in the package.
- What is the base-emitter turn-on voltage of the NSS40301MDR2G transistor?
The base-emitter turn-on voltage (VBE(on)) at IC = 0.1 A and VCE = 2.0 V is typically 0.650 V.
