NSS12100XV6T1G
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onsemi NSS12100XV6T1G

Manufacturer No:
NSS12100XV6T1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PNP 12V 1A SOT563
Delivery:
Payment:
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Product Introduction

Overview

The NSS12100XV6T1G is a low VCE(sat) PNP transistor from ON Semiconductor's e2PowerEdge family. This miniature surface mount device is designed to offer ultra-low saturation voltage (VCE(sat)), making it highly efficient for various electronic applications. The transistor is packaged in a SOT563 package, which is compact and suitable for space-constrained designs.

Key Specifications

ParameterValue
Transistor TypePNP
Collector-Emitter Voltage (VCE)12 V
Collector Current (IC)1 A
Saturation Voltage (VCE(sat))0.1 V (typical at IC = 500 mA, IB = 50 mA)
Power Dissipation (PD)0.65 W
PackageSOT563

Key Features

  • Ultra-low saturation voltage (VCE(sat)) for high efficiency
  • Compact SOT563 package suitable for space-constrained designs
  • High collector current capability of 1 A
  • Low power dissipation of 0.65 W
  • PNP transistor configuration for versatile application use

Applications

The NSS12100XV6T1G is suitable for a variety of applications, including but not limited to:

  • Power management and switching circuits
  • Audio and video amplifiers
  • Automotive and industrial control systems
  • General-purpose amplification and switching

Q & A

  1. What is the collector-emitter voltage (VCE) of the NSS12100XV6T1G? The collector-emitter voltage (VCE) is 12 V.
  2. What is the typical saturation voltage (VCE(sat)) of the NSS12100XV6T1G? The typical saturation voltage (VCE(sat)) is 0.1 V at IC = 500 mA and IB = 50 mA.
  3. What is the maximum collector current (IC) of the NSS12100XV6T1G? The maximum collector current (IC) is 1 A.
  4. What is the power dissipation (PD) of the NSS12100XV6T1G? The power dissipation (PD) is 0.65 W.
  5. In what package is the NSS12100XV6T1G available? The NSS12100XV6T1G is available in a SOT563 package.
  6. What are some common applications for the NSS12100XV6T1G? Common applications include power management and switching circuits, audio and video amplifiers, automotive and industrial control systems, and general-purpose amplification and switching.
  7. Why is the NSS12100XV6T1G considered efficient? The NSS12100XV6T1G is considered efficient due to its ultra-low saturation voltage (VCE(sat)).
  8. Is the NSS12100XV6T1G suitable for space-constrained designs? Yes, the NSS12100XV6T1G is suitable for space-constrained designs due to its compact SOT563 package.
  9. What is the transistor type of the NSS12100XV6T1G? The transistor type is PNP.
  10. Where can I find detailed specifications for the NSS12100XV6T1G? Detailed specifications can be found in the datasheet available on ON Semiconductor's official website and other electronic component distributors like Mouser and TME.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):12 V
Vce Saturation (Max) @ Ib, Ic:440mV @ 100mA, 1A
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 500mA, 2V
Power - Max:500 mW
Frequency - Transition:- 
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-563, SOT-666
Supplier Device Package:SOT-563
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In Stock

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Same Series
NSV12100XV6T1G
NSV12100XV6T1G
TRANS PNP 12V 1A SOT563

Similar Products

Part Number NSS12100XV6T1G NSV12100XV6T1G
Manufacturer onsemi onsemi
Product Status Active Active
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 12 V 12 V
Vce Saturation (Max) @ Ib, Ic 440mV @ 100mA, 1A 440mV @ 100mA, 1A
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 500mA, 2V 100 @ 500mA, 2V
Power - Max 500 mW 650 mW
Frequency - Transition - -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case SOT-563, SOT-666 SOT-563, SOT-666
Supplier Device Package SOT-563 SOT-563

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