Overview
The NSL12AWT1G is a high-current surface mount PNP silicon transistor designed by onsemi. This transistor is optimized for battery-operated applications, offering high current capability and low VCE(sat) characteristics. It is packaged in a small SC-88/SOT-363 case, making it suitable for space-constrained designs. The device is Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability and regulatory compliance.
Key Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Emitter Voltage | VCEO | - | - | -12 | Vdc |
| Collector-Base Voltage | VCBO | - | - | -12 | Vdc |
| Emitter-Base Voltage | VEBO | - | - | -5.0 | Vdc |
| Collector Current - Continuous | IC | - | - | -2.0 | Adc |
| Collector Current - Peak | ICM | - | - | -3.0 | Adc |
| Collector-Emitter Saturation Voltage | VCE(sat) | - | 0.17 | 0.29 | V |
| Base-Emitter Saturation Voltage | VBE(sat) | - | 0.84 | 0.95 | V |
| Total Device Dissipation (TA = 25°C) | PD | - | - | 450 | mW |
| Thermal Resistance, Junction-to-Ambient | RJA | - | - | 275 | °C/W |
Key Features
- High current capability of up to 3 A
- High power handling of up to 650 mW
- Low VCE(sat) of 170 mV typical at 1 A
- Small SC-88/SOT-363 package size
- Pb-free, halogen-free, and RoHS compliant
- High specific current and power capability reduces required PCB area
- Reduced parasitic losses increase battery life
Applications
The NSL12AWT1G transistor is particularly suited for battery-operated devices due to its high current capability and low VCE(sat). It is ideal for use in portable electronics, automotive systems, and other applications where space and power efficiency are critical.
- Portable electronics (e.g., smartphones, tablets)
- Automotive systems (e.g., infotainment, safety systems)
- Industrial control systems
- Consumer electronics (e.g., gaming consoles, set-top boxes)
Q & A
- What is the maximum collector current of the NSL12AWT1G transistor?
The maximum continuous collector current is 2.0 A, and the peak collector current is 3.0 A.
- What is the typical VCE(sat) of the NSL12AWT1G transistor?
The typical VCE(sat) is 0.17 V at 1 A.
- Is the NSL12AWT1G transistor RoHS compliant?
- What is the thermal resistance, junction-to-ambient, of the NSL12AWT1G transistor?
The thermal resistance, junction-to-ambient, is 275 °C/W.
- What are the typical applications of the NSL12AWT1G transistor?
The transistor is suited for battery-operated devices, portable electronics, automotive systems, and industrial control systems.
- What is the package type of the NSL12AWT1G transistor?
The transistor is packaged in a SC-88/SOT-363 case.
- What is the maximum total device dissipation at TA = 25°C?
The maximum total device dissipation at TA = 25°C is 450 mW.
- What is the base-emitter saturation voltage of the NSL12AWT1G transistor?
The base-emitter saturation voltage is typically 0.84 V.
- Is the NSL12AWT1G transistor suitable for high-power applications?
- How does the NSL12AWT1G transistor reduce parasitic losses?
The transistor reduces parasitic losses due to its low VCE(sat) and high specific current and power capability, which increases battery life.
