NRVUS160VT3G-GA01
  • Share:

onsemi NRVUS160VT3G-GA01

Manufacturer No:
NRVUS160VT3G-GA01
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE GEN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NRVUS160VT3G-GA01 is a high-performance, ultra-fast recovery rectifier produced by onsemi. This component is designed for high voltage and high frequency rectification applications, making it ideal for use in surface mount configurations where compact size and weight are critical. The device features a small, rectangular package with J-bend leads, facilitating automated handling and efficient mounting.

The NRVUS160VT3G-GA01 is part of the NRVUS series, which is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring stringent quality and reliability standards. It is also Pb-free and RoHS compliant, ensuring environmental sustainability.

Key Specifications

Parameter Symbol Unit Value
Peak Repetitive Reverse Voltage VRRM V 600
Working Peak Reverse Voltage VRWM V 600
DC Blocking Voltage VR V 600
Continuous Forward Current IF(DC) A 1.0 @ TL = 159°C
Non-Repetitive Peak Surge Current IFSM A 35
Operating Junction Temperature TJ °C -65 to +175
Maximum Instantaneous Forward Voltage vF V 0.71 to 1.05 @ 1.0 A, TJ = 150°C
Maximum Reverse Recovery Time trr ns 35 to 75
Thermal Resistance Junction-to-Lead RθJL °C/W 13

Key Features

  • Small, compact surface mountable package with J-bend leads for efficient mounting and automated handling.
  • High temperature glass passivated junction for enhanced reliability and performance.
  • Low forward voltage drop (0.71 to 1.05 V Max @ 1.0 A, TJ = 150°C) for reduced power losses.
  • Ultra-fast recovery time, making it suitable for high frequency applications.
  • AEC-Q101 qualified and PPAP capable, ensuring compliance with automotive and other stringent quality standards.
  • Pb-free and RoHS compliant, aligning with environmental regulations.
  • Corrosion-resistant finish and readily solderable terminal leads.
  • ESD rating: Human Body Model > 8 kV and Charged Device Model > 1000 V.

Applications

  • High voltage and high frequency rectification in various electronic systems.
  • Free-wheeling and protection diodes in surface mount applications.
  • Automotive systems requiring high reliability and compliance with AEC-Q101 standards.
  • Power supplies, DC-DC converters, and other power management circuits.
  • Industrial and consumer electronics where compact size and high performance are critical.

Q & A

  1. What is the peak repetitive reverse voltage of the NRVUS160VT3G-GA01?

    The peak repetitive reverse voltage is 600 V.

  2. What is the continuous forward current rating of this device?

    The continuous forward current rating is 1.0 A at a lead temperature of 159°C.

  3. What is the maximum instantaneous forward voltage drop at 1.0 A and 150°C junction temperature?

    The maximum instantaneous forward voltage drop is 1.05 V.

  4. Is the NRVUS160VT3G-GA01 Pb-free and RoHS compliant?

    Yes, it is Pb-free and RoHS compliant.

  5. What is the thermal resistance junction-to-lead for this device?

    The thermal resistance junction-to-lead is 13 °C/W.

  6. What are the typical applications of the NRVUS160VT3G-GA01?

    Typical applications include high voltage and high frequency rectification, free-wheeling and protection diodes, and automotive systems.

  7. Is the NRVUS160VT3G-GA01 AEC-Q101 qualified?

    Yes, it is AEC-Q101 qualified and PPAP capable.

  8. What is the ESD rating of the NRVUS160VT3G-GA01?

    The ESD rating is > 8 kV for the Human Body Model and > 1000 V for the Charged Device Model.

  9. What is the operating junction temperature range for this device?

    The operating junction temperature range is -65 to +175 °C.

  10. What is the maximum non-repetitive peak surge current rating?

    The maximum non-repetitive peak surge current rating is 35 A.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):2A
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):75 ns
Current - Reverse Leakage @ Vr:5 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:DO-214AA, SMB
Supplier Device Package:SMB
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

-
444

Please send RFQ , we will respond immediately.

Same Series
DD15S10LVLS/AA
DD15S10LVLS/AA
CONN D-SUB HD RCPT 15POS CRIMP
DD15S2S0V50
DD15S2S0V50
CONN D-SUB HD RCPT 15P SLDR CUP
RD15S10HE0/AA
RD15S10HE0/AA
CONN D-SUB RCPT 15POS CRIMP
CBC13W3S10HE30/AA
CBC13W3S10HE30/AA
CONN D-SUB RCPT 13POS CRIMP
CBC46W4S1S500S
CBC46W4S1S500S
CONN D-SUB RCPT 46POS CRIMP
DD26S2S500X/AA
DD26S2S500X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
CBC47W1S1S50V50
CBC47W1S1S50V50
CONN D-SUB RCPT 47POS CRIMP
DD15S20JVLS/AA
DD15S20JVLS/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S200E0/AA
DD26S200E0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
RD50S1S500S
RD50S1S500S
CONN D-SUB RCPT 50POS CRIMP
DD26S2S5W0X/AA
DD26S2S5W0X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S60T0
DD44S32S60T0
CONN D-SUB HD RCPT 44P VERT SLDR

Related Product By Categories

PMEG3020EP,115
PMEG3020EP,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 2A CFP5
RB751S40T1G
RB751S40T1G
onsemi
DIODE SCHOTTKY 30V 30MA SOD523
STPS2H100A
STPS2H100A
STMicroelectronics
DIODE SCHOTTKY 100V 2A SMA
STPS8H100DEE-TR
STPS8H100DEE-TR
STMicroelectronics
DIODE SCHOTTKY 100V 8A POWERFLAT
BAS70L,315
BAS70L,315
Nexperia USA Inc.
DIODE SCHOT 70V 70MA DFN1006-2
BAS516-TP
BAS516-TP
Micro Commercial Co
DIODE GEN PURP 100V 250MA SOD523
BAS21E6433HTMA1
BAS21E6433HTMA1
Infineon Technologies
DIODE GEN PURP 200V 250MA SOT23
1N4007 BK
1N4007 BK
Central Semiconductor Corp
DIODE GPP 1A 1000V DO41 AXIAL
1N4004GH
1N4004GH
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO204AL
MUR820
MUR820
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 8A TO220AC
STPS2150RL
STPS2150RL
STMicroelectronics
DIODE SCHOTTKY 150V 2A DO15
1N4001GP-M3/54
1N4001GP-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 1A DO204AL

Related Product By Brand

MMSZ5267BT1G
MMSZ5267BT1G
onsemi
DIODE ZENER 75V 500MW SOD123
MJE5731AG
MJE5731AG
onsemi
TRANS PNP 375V 1A TO220
2N3773G
2N3773G
onsemi
TRANS NPN 140V 16A TO204
MJD44H11TF
MJD44H11TF
onsemi
TRANS NPN 80V 8A DPAK
TIP145G
TIP145G
onsemi
TRANS PNP DARL 60V 10A TO247-3
NVD5407NT4G
NVD5407NT4G
onsemi
MOSFET N-CH 40V 7.6A/38A DPAK
MC74HC32ADTEL
MC74HC32ADTEL
onsemi
IC GATE OR 4CH 2-INP 14TSSOP
CAT24C02YI-GT3JN
CAT24C02YI-GT3JN
onsemi
IC EEPROM 2KBIT I2C 8TSSOP
NCP45495XMNTWG
NCP45495XMNTWG
onsemi
L MANGO
NCP163AFCT280T2G
NCP163AFCT280T2G
onsemi
IC REG LINEAR 2.8V 250MA 4WLCSP
NCV57080BDR2G
NCV57080BDR2G
onsemi
ISOLATED HIGH CURRENT GATE DRIVE
FODM217CR2V
FODM217CR2V
onsemi
OPTOCOUPLER PHOTOTRANS MFP4