Overview
The NRVUS120VT3G-GA01 is a high-performance, ultra-fast recovery rectifier diode produced by onsemi. This component is designed for high-voltage, high-frequency rectification and is suitable for use as free-wheeling and protection diodes in surface mount applications. The device features a compact SMB (Small Outline Molded) package with J-bend leads, making it ideal for systems where space and weight are critical.
The NRVUS120VT3G-GA01 is part of onsemi's family of ultra-fast recovery rectifiers, which are AEC-Q101 qualified and PPAP capable, making them suitable for automotive and other applications requiring unique site and control change requirements. The device is also Pb-free and RoHS compliant.
Key Specifications
| Parameter | Symbol | Unit | Value |
|---|---|---|---|
| Peak Repetitive Reverse Voltage | VRRM | V | 200 |
| Working Peak Reverse Voltage | VRWM | V | 200 |
| DC Blocking Voltage | VR | V | 200 |
| Continuous Forward Current | IF(DC) | A | 1.0 @ TL = 159°C |
| Non-Repetitive Peak Surge Current | IFSM | A | 35 |
| Operating Junction Temperature | TJ | °C | -65 to +175 |
| Maximum Instantaneous Forward Voltage | vF | V | 0.71 to 1.05 @ 1.0 A, TJ = 150°C |
| Maximum Reverse Recovery Time | trr | ns | 35 to 75 |
| Thermal Resistance Junction-to-Lead | RθJL | °C/W | 13 |
| ESD Rating (Human Body Model) | > 8 kV | ||
| ESD Rating (Charged Device Model) | > 1000 V |
Key Features
- Small compact surface mountable package with J-bend leads
- Rectangular package for automated handling
- High temperature glass passivated junction
- Low forward voltage drop (0.71 to 1.05 V Max @ 1.0 A, TJ = 150°C)
- AEC-Q101 qualified and PPAP capable for automotive and other applications
- Pb-free and RoHS compliant
- Corrosion-resistant finish and readily solderable terminal leads
- High ESD rating (Human Body Model > 8 kV, Charged Device Model > 1000 V)
Applications
The NRVUS120VT3G-GA01 is ideally suited for various high-voltage and high-frequency applications, including:
- High-voltage rectification
- Free-wheeling diodes
- Protection diodes in surface mount applications
- Automotive systems requiring AEC-Q101 qualification
- Other applications where compact size and weight are critical
Q & A
- What is the peak repetitive reverse voltage of the NRVUS120VT3G-GA01?
The peak repetitive reverse voltage (VRRM) is 200 V.
- What is the continuous forward current rating of the NRVUS120VT3G-GA01?
The continuous forward current (IF(DC)) is 1.0 A at a lead temperature (TL) of 159°C.
- What is the maximum operating junction temperature for this device?
The operating junction temperature (TJ) range is -65 to +175°C.
- Is the NRVUS120VT3G-GA01 Pb-free and RoHS compliant?
- What is the ESD rating of the NRVUS120VT3G-GA01?
The ESD rating is > 8 kV for the Human Body Model and > 1000 V for the Charged Device Model.
- What package type does the NRVUS120VT3G-GA01 come in?
The device comes in an SMB (Small Outline Molded) package with J-bend leads.
- Is the NRVUS120VT3G-GA01 suitable for automotive applications?
- What is the thermal resistance junction-to-lead for this device?
The thermal resistance junction-to-lead (RθJL) is 13°C/W.
- What is the maximum instantaneous forward voltage of the NRVUS120VT3G-GA01?
The maximum instantaneous forward voltage (vF) is 0.71 to 1.05 V at 1.0 A and TJ = 150°C.
- What is the maximum reverse recovery time of the NRVUS120VT3G-GA01?
The maximum reverse recovery time (trr) is 35 to 75 ns.
