NRVTSA4100ET3G-GA01
  • Share:

onsemi NRVTSA4100ET3G-GA01

Manufacturer No:
NRVTSA4100ET3G-GA01
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NRVTSA4100ET3G-GA01 is a Trench Schottky Rectifier diode produced by onsemi. This component is designed for high-efficiency and low-loss applications, making it suitable for various power management and rectification needs. It features a low forward voltage drop and fast recovery time, enhancing its performance in high-frequency switching environments.

Key Specifications

ParameterValue
Voltage - DC Reverse (Vr) (Max)100 V
Current - Average Rectified (Io)4 A
Current - Reverse Leakage @ Vr25 µA @ 100 V
Operating Junction Temperature-55°C to +175°C
Storage Temperature Range-65°C to +175°C
Voltage - Forward (Vf) (Max) @ If660 mV @ 4 A
Recovery Time< 500 ns, > 200 mA (Io)
PackagingTape & Reel (TR), Cut Tape (CT)

Key Features

  • Low forward voltage drop (Vf) of 660 mV at 4 A, reducing power losses.
  • Fast recovery time of less than 500 ns, suitable for high-frequency applications.
  • Low reverse leakage current of 25 µA at 100 V, enhancing efficiency.
  • Wide operating junction temperature range from -55°C to +175°C.
  • Trench Schottky technology for improved performance and reliability.

Applications

The NRVTSA4100ET3G-GA01 is ideal for various applications requiring high-efficiency rectification and low-loss power management. These include:

  • Switch-mode power supplies.
  • DC-DC converters.
  • Power factor correction circuits.
  • High-frequency switching circuits.
  • General-purpose rectification in industrial and consumer electronics.

Q & A

  1. What is the maximum DC reverse voltage of the NRVTSA4100ET3G-GA01?
    The maximum DC reverse voltage is 100 V.
  2. What is the average rectified current rating of this diode?
    The average rectified current rating is 4 A.
  3. What is the forward voltage drop at 4 A?
    The forward voltage drop at 4 A is 660 mV.
  4. What is the recovery time of this diode?
    The recovery time is less than 500 ns.
  5. What is the operating junction temperature range?
    The operating junction temperature range is from -55°C to +175°C.
  6. What is the packaging option for this component?
    The packaging options are Tape & Reel (TR) and Cut Tape (CT).
  7. What technology is used in this diode?
    This diode uses Trench Schottky technology.
  8. What are some typical applications for this diode?
    Typical applications include switch-mode power supplies, DC-DC converters, power factor correction circuits, and high-frequency switching circuits.
  9. What is the reverse leakage current at 100 V?
    The reverse leakage current at 100 V is 25 µA.
  10. Is this component suitable for high-frequency applications?
    Yes, it is suitable due to its fast recovery time and low forward voltage drop.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):4A
Voltage - Forward (Vf) (Max) @ If:660 mV @ 4 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:25 µA @ 100 V
Capacitance @ Vr, F:54.7pF @ 100V, 1MHz
Mounting Type:Surface Mount
Package / Case:DO-214AC, SMA
Supplier Device Package:SMA
Operating Temperature - Junction:-65°C ~ 150°C
0 Remaining View Similar

In Stock

-
395

Please send RFQ , we will respond immediately.

Same Series
DD26S100E2X/AA
DD26S100E2X/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD15S20W0S/AA
DD15S20W0S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HE3X/AA
CBC13W3S10HE3X/AA
CONN D-SUB RCPT 13POS CRIMP
CBC9W4S10HT2S/AA
CBC9W4S10HT2S/AA
CONN D-SUB RCPT 9POS CRIMP
DD26M20HV30/AA
DD26M20HV30/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26S200TX
DD26S200TX
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2F00X
DD26S2F00X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2F00X/AA
DD26S2F00X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200EX
DD26S200EX
CONN D-SUB HD RCPT 26P SLDR CUP
DD62M32S0V3S/AA
DD62M32S0V3S/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD26S20J0X
DD26S20J0X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S5W0X/AA
DD26S2S5W0X/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Related Product By Categories

PMEG100V080ELPDZ
PMEG100V080ELPDZ
Nexperia USA Inc.
DIODE SCHOTTKY 100V 8A CFP15
1N4148UR-1
1N4148UR-1
Microchip Technology
DIODE GEN PURP 75V 200MA DO213AA
BAT54-TP
BAT54-TP
Micro Commercial Co
DIODE SCHOTTKY 30V 200MA SOT23
BAS286-GS08
BAS286-GS08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 50V 200MA SOD80
BAS321JX
BAS321JX
Nexperia USA Inc.
BAS321J/SOD323/SOD2
STTH5L06B-TR
STTH5L06B-TR
STMicroelectronics
DIODE GEN PURP 600V 5A DPAK
STTH512D
STTH512D
STMicroelectronics
DIODE GEN PURP 1.2KV 5A TO220AC
BAS16WS-HE3-18
BAS16WS-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 250MA SOD323
STTH108
STTH108
STMicroelectronics
DIODE GEN PURP 800V 1A DO41
STPS4S200UFN
STPS4S200UFN
STMicroelectronics
200 V, 4 A SCHOTTKY RECTIFIER
MBRM120LT3
MBRM120LT3
onsemi
DIODE SCHOTTKY 1A 20V POWERMITE
SS16HE3/61T
SS16HE3/61T
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 60V 1A DO214AC

Related Product By Brand

MMBTA55LT1G
MMBTA55LT1G
onsemi
TRANS PNP 60V 0.5A SOT23-3
MJD44H11G
MJD44H11G
onsemi
TRANS NPN 80V 8A DPAK
MC100EP195FAR2
MC100EP195FAR2
onsemi
IC DELAY LINE 1024TAP 32-LQFP
NCV7344AMW3R2G
NCV7344AMW3R2G
onsemi
IC TRANSCEIVER HALF 1/1 8DFNW
MC74HC32ADTEL
MC74HC32ADTEL
onsemi
IC GATE OR 4CH 2-INP 14TSSOP
MC74VHC1GT08EDFT2G
MC74VHC1GT08EDFT2G
onsemi
IC GATE AND 1CH 2-INP SC88A
CD4081BCN
CD4081BCN
onsemi
IC GATE AND 4CH 2-INP 14DIP
74HC04DR2G
74HC04DR2G
onsemi
IC INVERTER 6CH 1-INP 14SOIC
NCP1252ADR2G
NCP1252ADR2G
onsemi
IC OFFLINE SWITCH MULT TOP 8SOIC
FAN3224TMX-F085
FAN3224TMX-F085
onsemi
IC GATE DRVR LOW-SIDE 8SOIC
NCV4274ADS50R4G
NCV4274ADS50R4G
onsemi
IC REG LINEAR 5V 400MA D2PAK
MC33375ST-3.0T3
MC33375ST-3.0T3
onsemi
IC REG LINEAR 3V 300MA SOT223