MURD550PFT4G
  • Share:

onsemi MURD550PFT4G

Manufacturer No:
MURD550PFT4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 520V 5A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MURD550PFT4G is a high-performance switching diode produced by onsemi. This component is designed for use in switch-mode power rectification applications, offering superior performance characteristics such as low forward voltage drop, ultrafast recovery time, and low leakage current. The MURD550PFT4G is particularly suited for high-frequency switching applications due to its fast recovery time and robust electrical specifications.

Key Specifications

ParameterValue
Maximum Voltage Rating520 V
Forward Voltage Drop1.15 V @ 5 A
Reverse Recovery Time95 ns
Maximum Surge Current75 A
Reverse Current (Ir)5 μA
Minimum Operating Temperature-65°C

Key Features

  • Ultrafast recovery time of 95 ns, making it suitable for high-frequency switching applications.
  • Low forward voltage drop of 1.15 V at 5 A, reducing power losses.
  • Low leakage current of 5 μA, enhancing overall efficiency.
  • Meets 80% derating requirements of major OEMs.
  • Compliant with RoHS standards.

Applications

The MURD550PFT4G is ideal for various switch-mode power supply applications, including but not limited to:

  • High-frequency switching power supplies.
  • DC-DC converters.
  • Power factor correction circuits.
  • Motor control and drive systems.

Q & A

  1. What is the maximum voltage rating of the MURD550PFT4G? The maximum voltage rating is 520 V.
  2. What is the forward voltage drop at 5 A? The forward voltage drop is 1.15 V at 5 A.
  3. What is the recovery time of the MURD550PFT4G? The recovery time is 95 ns.
  4. What is the maximum surge current the diode can handle? The maximum surge current is 75 A.
  5. Is the MURD550PFT4G RoHS compliant? Yes, it is RoHS compliant.
  6. What are the typical applications for the MURD550PFT4G? Typical applications include high-frequency switching power supplies, DC-DC converters, power factor correction circuits, and motor control systems.
  7. What is the minimum operating temperature for the MURD550PFT4G? The minimum operating temperature is -65°C.
  8. What is the reverse current (Ir) of the MURD550PFT4G? The reverse current is 5 μA.
  9. Does the MURD550PFT4G meet OEM derating requirements? Yes, it meets 80% derating requirements of major OEMs.
  10. Where can I find detailed specifications for the MURD550PFT4G? Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser and Digi-Key.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):520 V
Current - Average Rectified (Io):5A
Voltage - Forward (Vf) (Max) @ If:1.15 V @ 5 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):95 ns
Current - Reverse Leakage @ Vr:5 µA @ 520 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

$0.86
557

Please send RFQ , we will respond immediately.

Same Series
MUR550APFRLG
MUR550APFRLG
DIODE GEN PURP 520V 5A DO201AD
MUR550APF
MUR550APF
DIODE GEN PURP 520V 5A DO201AD
MUR550APFG
MUR550APFG
DIODE GEN PURP 520V 5A DO201AD
MUR550APFRL
MUR550APFRL
DIODE GEN PURP 520V 5A DO201AD
MUR550PF
MUR550PF
DIODE GEN PURP 520V 5A TO220AC
MUR550PFG
MUR550PFG
DIODE GEN PURP 520V 5A TO220AC
MURD550PFT4
MURD550PFT4
DIODE GEN PURP 520V 5A DPAK
MURF550PFG
MURF550PFG
DIODE GEN PURP 520V 5A TO220FP
NRVUD550PFT4G-VF01
NRVUD550PFT4G-VF01
DIODE GEN PURP 520V 5A DPAK

Similar Products

Part Number MURD550PFT4G MURD550PFT4
Manufacturer onsemi onsemi
Product Status Active Obsolete
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 520 V 520 V
Current - Average Rectified (Io) 5A 5A
Voltage - Forward (Vf) (Max) @ If 1.15 V @ 5 A 1.15 V @ 5 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 95 ns 95 ns
Current - Reverse Leakage @ Vr 5 µA @ 520 V 5 µA @ 520 V
Capacitance @ Vr, F - -
Mounting Type Surface Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK DPAK
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

NRVB130T1G
NRVB130T1G
onsemi
DIODE SCHOTTKY 30V 1A SOD123
BAS20WTHE3-TP
BAS20WTHE3-TP
Micro Commercial Co
DIODE GEN PURP 150V 200MA SOT323
STTH1R02RL
STTH1R02RL
STMicroelectronics
DIODE GEN PURP 200V 1.5A DO41
MURA160T3G
MURA160T3G
onsemi
DIODE GEN PURP 600V 1A SMA
BAS70L,315
BAS70L,315
Nexperia USA Inc.
DIODE SCHOT 70V 70MA DFN1006-2
MURS140T3G
MURS140T3G
onsemi
DIODE GEN PURP 400V 1A SMB
SMMDL6050T1G
SMMDL6050T1G
onsemi
DIODE GEN PURP 70V 200MA SOD323
BAT42W-E3-18
BAT42W-E3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
STPS2H100AFN
STPS2H100AFN
STMicroelectronics
100 V, 2 A POWER SCHOTTKY RECTIF
1N4004GP
1N4004GP
onsemi
DIODE GEN PURP 400V 1A DO41
1N4937G R1G
1N4937G R1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
BAT43 A0G
BAT43 A0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA DO35

Related Product By Brand

ESD7481MUT5G
ESD7481MUT5G
onsemi
TVS DIODE 3.3VWM 12VC 2X3DFN
BAW56LT3G
BAW56LT3G
onsemi
DIODE ARRAY GP 70V 200MA SOT23-3
BZX55C18_T50A
BZX55C18_T50A
onsemi
DIODE ZENER 18V 500MW DO35
BD138G
BD138G
onsemi
TRANS PNP 60V 1.5A TO126
BC81740MTF
BC81740MTF
onsemi
TRANS NPN 45V 0.8A SOT23-3
NTD3055L104
NTD3055L104
onsemi
MOSFET N-CH 60V 12A DPAK
MC74HC4051ADWR2G
MC74HC4051ADWR2G
onsemi
IC MUX/DEMUX 8X1 16SOIC
NCS36000DRG
NCS36000DRG
onsemi
IC PIR DETECTOR CTLR 14SOIC
MC74HC245ADWR2
MC74HC245ADWR2
onsemi
IC BUS TRANSCVR 3-ST 8B 20SOIC
MC74AC14DTR2G
MC74AC14DTR2G
onsemi
IC INVERTER 6CH 1-INP 14TSSOP
NCP302HSN27T1G
NCP302HSN27T1G
onsemi
IC SUPERVISOR 1 CHANNEL 5TSOP
NCV4276CDS50R4G
NCV4276CDS50R4G
onsemi
IC REG LINEAR 5V 400MA D2PAK-5