MURB1620CTRT4G
  • Share:

onsemi MURB1620CTRT4G

Manufacturer No:
MURB1620CTRT4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE ARRAY GP 200V 8A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MURB1620CTRT4G is an ultrafast rectifier designed and manufactured by onsemi. This device is optimized for use in switching power supplies, inverters, and as free-wheeling diodes. It is particularly suited for applications requiring high efficiency and fast recovery times. The MURB1620CTRT4G is part of the D2PAK-3 package family, which is designed for power surface mount applications, offering a compact and efficient solution for various power management needs.

Key Specifications

CharacteristicSymbolValueUnit
Peak Repetitive Reverse VoltageVRRM200V
Average Rectified Forward Current (Rated VR, TC = 150°C)IF(AV)8.0 (per leg), 16 (total device)A
Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz, TC = 150°C)IFM16A
Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)IFSM100A
Operating Junction and Storage Temperature RangeTJ, Tstg−65 to +175°C
Maximum Thermal Resistance, Junction-to-CaseRθJC3°C/W
Maximum Thermal Resistance, Junction-to-AmbientRθJA50°C/W
Maximum Instantaneous Forward Voltage (iF = 8 A, TC = 150°C)vF0.895V
Maximum Reverse Recovery Time (IF = 1 A, di/dt = 50 A/μs)trr35ns

Key Features

  • Ultrafast 35 nanosecond recovery times, ensuring high efficiency in switching applications.
  • High temperature glass passivated junction, allowing for operation up to 175°C junction temperature.
  • Low leakage specified at 150°C case temperature, reducing power losses.
  • Epoxy meets UL 94 V-0 @ 0.125 in, ensuring high safety standards.
  • Short heat sink tab manufactured, not sheared, for better thermal performance.
  • Similar in size to industrial standard TO-220 package, facilitating easy integration.
  • NRVU prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.
  • Pb-free and RoHS compliant, aligning with environmental regulations.
  • ESD ratings: Machine Model = C (> 400 V), Human Body Model = 3B (> 8000 V).

Applications

The MURB1620CTRT4G is designed for various power management applications, including:

  • Switching power supplies: Ideal for high-frequency switching applications due to its ultrafast recovery times.
  • Inverters: Used in inverter circuits to manage power efficiently.
  • Free-wheeling diodes: Acts as a free-wheeling diode in power circuits to prevent backflow of current.
  • Automotive applications: Qualified under AEC-Q101 and PPAP capable, making it suitable for automotive and other demanding environments.

Q & A

  1. What is the peak repetitive reverse voltage of the MURB1620CTRT4G?
    The peak repetitive reverse voltage (VRRM) is 200 V.
  2. What is the average rectified forward current rating for this device?
    The average rectified forward current (IF(AV)) is 8.0 A per leg or 16 A for the total device at a case temperature of 150°C.
  3. What is the maximum operating junction temperature for this rectifier?
    The maximum operating junction temperature is 175°C.
  4. What are the ESD ratings for the MURB1620CTRT4G?
    The ESD ratings are Machine Model = C (> 400 V) and Human Body Model = 3B (> 8000 V).
  5. Is the MURB1620CTRT4G Pb-free and RoHS compliant?
    Yes, the device is Pb-free and RoHS compliant.
  6. What is the typical reverse recovery time for this rectifier?
    The typical reverse recovery time (trr) is 35 nanoseconds.
  7. What are the common applications of the MURB1620CTRT4G?
    Common applications include switching power supplies, inverters, and as free-wheeling diodes.
  8. What is the thermal resistance from junction to case for this device?
    The thermal resistance from junction to case (RθJC) is 3°C/W.
  9. Is the MURB1620CTRT4G suitable for automotive applications?
    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding environments.
  10. What package type is the MURB1620CTRT4G available in?
    The device is available in the D2PAK-3 package.

Product Attributes

Diode Configuration:1 Pair Common Anode
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io) (per Diode):8A
Voltage - Forward (Vf) (Max) @ If:1.2 V @ 8 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):85 ns
Current - Reverse Leakage @ Vr:5 µA @ 200 V
Operating Temperature - Junction:-65°C ~ 175°C
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:D²PAK (TO-263)
0 Remaining View Similar

In Stock

$1.95
113

Please send RFQ , we will respond immediately.

Same Series
MUR1620CTRG
MUR1620CTRG
DIODE ARRAY GP 200V 8A TO220AB
NRVUB1620CTRT4G
NRVUB1620CTRT4G
DIODE GEN PURP 200V 8A D2PAK-3
MUR1620CTR
MUR1620CTR
DIODE ARRAY GP 200V 8A TO220AB
MURB1620CTRT4
MURB1620CTRT4
DIODE ARRAY GP 200V 8A D2PAK
MURB1620CTR
MURB1620CTR
DIODE ARRAY GP 200V 8A D2PAK
MURB1620CTRG
MURB1620CTRG
DIODE ARRAY GP 200V 8A D2PAK

Similar Products

Part Number MURB1620CTRT4G MURB1620CTT4G MURB1620CTRT4
Manufacturer onsemi onsemi onsemi
Product Status Active Active Obsolete
Diode Configuration 1 Pair Common Anode 1 Pair Common Cathode 1 Pair Common Anode
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 200 V 200 V
Current - Average Rectified (Io) (per Diode) 8A 8A 8A
Voltage - Forward (Vf) (Max) @ If 1.2 V @ 8 A 975 mV @ 8 A 1.2 V @ 8 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 85 ns 35 ns 85 ns
Current - Reverse Leakage @ Vr 5 µA @ 200 V 5 µA @ 200 V 5 µA @ 200 V
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D²PAK (TO-263) D²PAK D²PAK

Related Product By Categories

BAV99STB6_R1_00001
BAV99STB6_R1_00001
Panjit International Inc.
SURFACE MOUNT SWITCHING DIODE
BAV70_R1_00001
BAV70_R1_00001
Panjit International Inc.
SOT-23, SWITCHING
BAT54S,215
BAT54S,215
Nexperia USA Inc.
DIODE ARRAY SCHOTTKY 30V SOT23
BAW56W,115
BAW56W,115
Nexperia USA Inc.
DIODE ARRAY GP 90V 150MA SOT323
BAV70HDWQ-13
BAV70HDWQ-13
Diodes Incorporated
DIODE FS 100V 125MA SOT363
BAV99UE6327
BAV99UE6327
Infineon Technologies
RECTIFIER DIODE
BAV99HDW-13
BAV99HDW-13
Diodes Incorporated
DIODE FS 100V 200MA SOT363
BAS28 TR TIN/LEAD
BAS28 TR TIN/LEAD
Central Semiconductor Corp
DIODE SW 75V 250MA SOT143
BAT54C-F2-0000HF
BAT54C-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
SCHOTTKY DIODE 30V 0.2A SOT-23-3
BAW56T,115
BAW56T,115
NXP USA Inc.
DIODE ARRAY GP 90V 150MA SC75
BAV99/DG/B4VL
BAV99/DG/B4VL
Nexperia USA Inc.
DIODE SWITCHING TO-236AB
BAT54A-QVL
BAT54A-QVL
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP

Related Product By Brand

SZBZX84C12LT1G
SZBZX84C12LT1G
onsemi
DIODE ZENER 12V 250MW SOT23-3
SBC847BPDXV6T1G
SBC847BPDXV6T1G
onsemi
TRANS NPN/PNP 45V 0.1A SOT-363
SMUN5313DW1T1G
SMUN5313DW1T1G
onsemi
TRANS PREBIAS 1NPN 1PNP 50V SC88
MC14528BDR2G
MC14528BDR2G
onsemi
IC MULTIVIBRATOR 90NS 16SOIC
NCP1252ADR2G
NCP1252ADR2G
onsemi
IC OFFLINE SWITCH MULT TOP 8SOIC
LC709203FXE-01MH
LC709203FXE-01MH
onsemi
IC BATT MON LI-ION 1CELL 9WLCSP
NSV45035JZT1G
NSV45035JZT1G
onsemi
IC REG CCR 45V 35MA SOT223
STK672-410C-E
STK672-410C-E
onsemi
IC MOTOR DRIVER UNIPOLAR 19SIP
CAT1021WI30
CAT1021WI30
onsemi
CAT1021 - SUPERVISORY CIRCUIT WI
NCP1593AMNTWG
NCP1593AMNTWG
onsemi
IC REG BUCK ADJUSTABLE 3A 10DFN
NCV4299D2
NCV4299D2
onsemi
IC REG LINEAR 5V 150MA 14SOIC
FOD817A3SD
FOD817A3SD
onsemi
OPTOISOLATOR 5KV TRANSISTOR 4SMD