MURB1620CTRT4G
  • Share:

onsemi MURB1620CTRT4G

Manufacturer No:
MURB1620CTRT4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE ARRAY GP 200V 8A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MURB1620CTRT4G is an ultrafast rectifier designed and manufactured by onsemi. This device is optimized for use in switching power supplies, inverters, and as free-wheeling diodes. It is particularly suited for applications requiring high efficiency and fast recovery times. The MURB1620CTRT4G is part of the D2PAK-3 package family, which is designed for power surface mount applications, offering a compact and efficient solution for various power management needs.

Key Specifications

CharacteristicSymbolValueUnit
Peak Repetitive Reverse VoltageVRRM200V
Average Rectified Forward Current (Rated VR, TC = 150°C)IF(AV)8.0 (per leg), 16 (total device)A
Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz, TC = 150°C)IFM16A
Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)IFSM100A
Operating Junction and Storage Temperature RangeTJ, Tstg−65 to +175°C
Maximum Thermal Resistance, Junction-to-CaseRθJC3°C/W
Maximum Thermal Resistance, Junction-to-AmbientRθJA50°C/W
Maximum Instantaneous Forward Voltage (iF = 8 A, TC = 150°C)vF0.895V
Maximum Reverse Recovery Time (IF = 1 A, di/dt = 50 A/μs)trr35ns

Key Features

  • Ultrafast 35 nanosecond recovery times, ensuring high efficiency in switching applications.
  • High temperature glass passivated junction, allowing for operation up to 175°C junction temperature.
  • Low leakage specified at 150°C case temperature, reducing power losses.
  • Epoxy meets UL 94 V-0 @ 0.125 in, ensuring high safety standards.
  • Short heat sink tab manufactured, not sheared, for better thermal performance.
  • Similar in size to industrial standard TO-220 package, facilitating easy integration.
  • NRVU prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.
  • Pb-free and RoHS compliant, aligning with environmental regulations.
  • ESD ratings: Machine Model = C (> 400 V), Human Body Model = 3B (> 8000 V).

Applications

The MURB1620CTRT4G is designed for various power management applications, including:

  • Switching power supplies: Ideal for high-frequency switching applications due to its ultrafast recovery times.
  • Inverters: Used in inverter circuits to manage power efficiently.
  • Free-wheeling diodes: Acts as a free-wheeling diode in power circuits to prevent backflow of current.
  • Automotive applications: Qualified under AEC-Q101 and PPAP capable, making it suitable for automotive and other demanding environments.

Q & A

  1. What is the peak repetitive reverse voltage of the MURB1620CTRT4G?
    The peak repetitive reverse voltage (VRRM) is 200 V.
  2. What is the average rectified forward current rating for this device?
    The average rectified forward current (IF(AV)) is 8.0 A per leg or 16 A for the total device at a case temperature of 150°C.
  3. What is the maximum operating junction temperature for this rectifier?
    The maximum operating junction temperature is 175°C.
  4. What are the ESD ratings for the MURB1620CTRT4G?
    The ESD ratings are Machine Model = C (> 400 V) and Human Body Model = 3B (> 8000 V).
  5. Is the MURB1620CTRT4G Pb-free and RoHS compliant?
    Yes, the device is Pb-free and RoHS compliant.
  6. What is the typical reverse recovery time for this rectifier?
    The typical reverse recovery time (trr) is 35 nanoseconds.
  7. What are the common applications of the MURB1620CTRT4G?
    Common applications include switching power supplies, inverters, and as free-wheeling diodes.
  8. What is the thermal resistance from junction to case for this device?
    The thermal resistance from junction to case (RθJC) is 3°C/W.
  9. Is the MURB1620CTRT4G suitable for automotive applications?
    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding environments.
  10. What package type is the MURB1620CTRT4G available in?
    The device is available in the D2PAK-3 package.

Product Attributes

Diode Configuration:1 Pair Common Anode
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io) (per Diode):8A
Voltage - Forward (Vf) (Max) @ If:1.2 V @ 8 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):85 ns
Current - Reverse Leakage @ Vr:5 µA @ 200 V
Operating Temperature - Junction:-65°C ~ 175°C
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:D²PAK (TO-263)
0 Remaining View Similar

In Stock

$1.95
113

Please send RFQ , we will respond immediately.

Same Series
MUR1620CTRG
MUR1620CTRG
DIODE ARRAY GP 200V 8A TO220AB
NRVUB1620CTRT4G
NRVUB1620CTRT4G
DIODE GEN PURP 200V 8A D2PAK-3
MUR1620CTR
MUR1620CTR
DIODE ARRAY GP 200V 8A TO220AB
MURB1620CTRT4
MURB1620CTRT4
DIODE ARRAY GP 200V 8A D2PAK
MURB1620CTR
MURB1620CTR
DIODE ARRAY GP 200V 8A D2PAK
MURB1620CTRG
MURB1620CTRG
DIODE ARRAY GP 200V 8A D2PAK

Similar Products

Part Number MURB1620CTRT4G MURB1620CTT4G MURB1620CTRT4
Manufacturer onsemi onsemi onsemi
Product Status Active Active Obsolete
Diode Configuration 1 Pair Common Anode 1 Pair Common Cathode 1 Pair Common Anode
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 200 V 200 V
Current - Average Rectified (Io) (per Diode) 8A 8A 8A
Voltage - Forward (Vf) (Max) @ If 1.2 V @ 8 A 975 mV @ 8 A 1.2 V @ 8 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 85 ns 35 ns 85 ns
Current - Reverse Leakage @ Vr 5 µA @ 200 V 5 µA @ 200 V 5 µA @ 200 V
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D²PAK (TO-263) D²PAK D²PAK

Related Product By Categories

BAS56,215
BAS56,215
Nexperia USA Inc.
DIODE ARRAY GP 60V 200MA SOT143B
BAT54A/DG/B4215
BAT54A/DG/B4215
NXP USA Inc.
RECTIFIER DIODE, SCHOTTKY
BAV70E6767
BAV70E6767
Infineon Technologies
GENERAL PURPOSE HIGH SPEED SWITC
BAV99DW-7-F
BAV99DW-7-F
Diodes Incorporated
DIODE ARRAY GP 75V 215MA SOT363
BAT54ADW-7-F
BAT54ADW-7-F
Diodes Incorporated
DIODE ARRAY SCHOTTKY 30V SOT363
BAS21VD,165
BAS21VD,165
Nexperia USA Inc.
DIODE ARRAY GP 200V 200MA 6TSOP
BAV99W/DG/B3115
BAV99W/DG/B3115
NXP USA Inc.
RECTIFIER DIODE
BAV23CQ-7-F
BAV23CQ-7-F
Diodes Incorporated
HIVOLT SWITCHING DIODE BVR > 100
BAV99WE6433BTMA1
BAV99WE6433BTMA1
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT323
BAW56WE6327HTSA1
BAW56WE6327HTSA1
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT323
BAS 40-05 B5003
BAS 40-05 B5003
Infineon Technologies
DIODE ARRAY SCHOTTKY 40V SOT23
BAV99W/DG/B4X
BAV99W/DG/B4X
Nexperia USA Inc.
DIODE SWITCHING TO-236AB

Related Product By Brand

MJD44H11TF
MJD44H11TF
onsemi
TRANS NPN 80V 8A DPAK
TIP145G
TIP145G
onsemi
TRANS PNP DARL 60V 10A TO247-3
NVHL025N65S3
NVHL025N65S3
onsemi
MOSFET N-CH 650V 75A TO247-3
NVMFS5C410NLWFT3G
NVMFS5C410NLWFT3G
onsemi
MOSFET N-CH 40V 48A/315A 5DFN
FDS4465-G
FDS4465-G
onsemi
MOSFET P-CH 20V 8SOIC
MC33074APG
MC33074APG
onsemi
IC OPAMP JFET 4 CIRCUIT 14DIP
MC74HC163ADR2G
MC74HC163ADR2G
onsemi
LOG CMOS COUNTER 4BIT SOIC16
NC7SZ57P6X
NC7SZ57P6X
onsemi
IC LOGIC GATE UNIV 2INPUT SC70-6
CAT24C16YI-GT3JN
CAT24C16YI-GT3JN
onsemi
IC EEPROM 16KBIT I2C 8TSSOP
STK672-410C-E
STK672-410C-E
onsemi
IC MOTOR DRIVER UNIPOLAR 19SIP
NCP705MTADJTCG
NCP705MTADJTCG
onsemi
IC REG LIN POS ADJ 500MA 6WDFN
FODM8801BR2
FODM8801BR2
onsemi
OPTOISO 3.75KV TRANS 4-MINI-FLAT