MURB1620CTT4G
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onsemi MURB1620CTT4G

Manufacturer No:
MURB1620CTT4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE ARRAY GP 200V 8A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MURB1620CTT4G is a high-performance, ultrafast rectifier diode produced by onsemi. This device is designed for use in switching power supplies, inverters, and as free-wheeling diodes. It features a D2PAK power surface mount package, making it suitable for high-power applications. The MURB1620CTT4G is known for its ultrafast recovery times and high operating junction temperature, making it a reliable choice for demanding electrical systems.

Key Specifications

Rating Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM 200 V
Average Rectified Forward Current (Rated VR, TC = 150°C) IF(AV) 8.0 / 16 A
Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz, TC = 150°C) IFM 16 A
Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 100 A
Operating Junction and Storage Temperature Range TJ, Tstg −65 to +175 °C
Maximum Thermal Resistance, Junction-to-Case RθJC 3 °C/W
Maximum Thermal Resistance, Junction-to-Ambient RθJA 50 °C/W
Maximum Instantaneous Forward Voltage (iF = 8 A, TC = 150°C) vF 0.895 V
Maximum Reverse Recovery Time (IF = 1 A, di/dt = 50 A/μs) trr 35 ns

Key Features

  • Package Designed for Power Surface Mount Applications
  • Ultrafast 35 Nanosecond Recovery Times
  • 175°C Operating Junction Temperature
  • Epoxy Meets UL 94 V-0 @ 0.125 in
  • High Temperature Glass Passivated Junction
  • Low Leakage Specified @ 150°C Case Temperature
  • Short Heat Sink Tab Manufactured − Not Sheared!
  • Similar in Size to Industrial Standard TO-220 Package
  • NRVUB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
  • Pb-Free and RoHS Compliant

Applications

The MURB1620CTT4G is designed for use in various high-power applications, including:

  • Switching power supplies
  • Inverters
  • Free-wheeling diodes
  • Automotive systems (with NRVUB prefix)

Q & A

  1. What is the peak repetitive reverse voltage of the MURB1620CTT4G?

    The peak repetitive reverse voltage is 200V.

  2. What is the average rectified forward current rating for the MURB1620CTT4G at 150°C case temperature?

    The average rectified forward current is 8.0A for the total device, with a peak of 16A.

  3. What is the maximum operating junction temperature of the MURB1620CTT4G?

    The maximum operating junction temperature is 175°C.

  4. What is the reverse recovery time of the MURB1620CTT4G?

    The reverse recovery time is 35 nanoseconds.

  5. Is the MURB1620CTT4G Pb-Free and RoHS compliant?
  6. What package type does the MURB1620CTT4G use?

    The MURB1620CTT4G uses a D2PAK power surface mount package.

  7. What are the thermal resistance characteristics of the MURB1620CTT4G?

    The maximum thermal resistance from junction to case (RθJC) is 3°C/W, and from junction to ambient (RθJA) is 50°C/W.

  8. Is the MURB1620CTT4G suitable for automotive applications?
  9. What is the maximum instantaneous forward voltage of the MURB1620CTT4G at 8A and 150°C?
  10. Is the MURB1620CTT4G still recommended for new designs?

Product Attributes

Diode Configuration:1 Pair Common Cathode
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io) (per Diode):8A
Voltage - Forward (Vf) (Max) @ If:975 mV @ 8 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):35 ns
Current - Reverse Leakage @ Vr:5 µA @ 200 V
Operating Temperature - Junction:-65°C ~ 175°C
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:D²PAK
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Same Series
NRVUB1620CTT4G
NRVUB1620CTT4G
DIODE GEN PURP 200V 8A D2PAK-3
MURB1620CTT4G
MURB1620CTT4G
DIODE ARRAY GP 200V 8A D2PAK
MURB1620CTG
MURB1620CTG
DIODE ARRAY GP 200V 8A D2PAK

Similar Products

Part Number MURB1620CTT4G MURB1660CTT4G MURB1620CTRT4G MURB1620CTT4
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Active Active
Diode Configuration 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Anode 1 Pair Common Cathode
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 600 V 200 V 200 V
Current - Average Rectified (Io) (per Diode) 8A 8A 8A 8A
Voltage - Forward (Vf) (Max) @ If 975 mV @ 8 A 1.5 V @ 8 A 1.2 V @ 8 A 975 mV @ 8 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 35 ns 60 ns 85 ns 35 ns
Current - Reverse Leakage @ Vr 5 µA @ 200 V 10 µA @ 600 V 5 µA @ 200 V 5 µA @ 200 V
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D²PAK D²PAK D²PAK (TO-263) D²PAK

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