Overview
The MSA1162GT1GH6-PANA is a general-purpose amplifier transistor produced by onsemi. This PNP surface-mount transistor is designed for a wide range of applications requiring reliable and efficient amplification. The device is lead-free and has a moisture sensitivity level of 1, making it suitable for various environmental conditions.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Base Voltage | V(BR)CBO | 60 | Vdc |
| Collector-Emitter Voltage | V(BR)CEO | 50 | Vdc |
| Emitter-Base Voltage | V(BR)EBO | 7.0 | Vdc |
| Collector Current - Continuous | IC | 100 | mAdc |
| Collector Current - Peak | IC(P) | 200 | mAdc |
| Power Dissipation | PD | 200 | mW |
| Junction Temperature | TJ | 150 | °C |
| Storage Temperature | Tstg | -55 to +150 | °C |
| DC Current Gain (hFE) | hFE | 200 - 400 | - |
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.5 | Vdc |
| Current-Gain - Bandwidth Product (fT) | fT | 80 | MHz |
Key Features
- PNP surface-mount transistor
- Lead-free device
- Moisture sensitivity level: 1
- High collector-emitter breakdown voltage (V(BR)CEO): 50 Vdc
- High collector-base breakdown voltage (V(BR)CBO): 60 Vdc
- Continuous collector current: 100 mAdc, peak collector current: 200 mAdc
- Low collector-emitter saturation voltage (VCE(sat)): 0.5 Vdc
- High current-gain - bandwidth product (fT): 80 MHz
Applications
The MSA1162GT1GH6-PANA transistor is suitable for a variety of applications, including:
- General-purpose amplification in audio and signal processing circuits
- Switching and driver circuits
- Automotive and industrial control systems
- Consumer electronics such as audio equipment and home appliances
Q & A
- What is the collector-emitter breakdown voltage of the MSA1162GT1GH6-PANA transistor?
The collector-emitter breakdown voltage (V(BR)CEO) is 50 Vdc.
- What is the continuous collector current rating of this transistor?
The continuous collector current (IC) is 100 mAdc.
- Is the MSA1162GT1GH6-PANA transistor lead-free?
Yes, the MSA1162GT1GH6-PANA transistor is a lead-free device.
- What is the moisture sensitivity level of this transistor?
The moisture sensitivity level is 1.
- What is the junction temperature rating of the MSA1162GT1GH6-PANA transistor?
The junction temperature (TJ) is 150 °C.
- What is the typical DC current gain (hFE) of this transistor?
The typical DC current gain (hFE) ranges from 200 to 400.
- What is the collector-emitter saturation voltage (VCE(sat)) of the MSA1162GT1GH6-PANA transistor?
The collector-emitter saturation voltage (VCE(sat)) is 0.5 Vdc.
- What is the current-gain - bandwidth product (fT) of this transistor?
The current-gain - bandwidth product (fT) is 80 MHz.
- In what types of applications is the MSA1162GT1GH6-PANA transistor commonly used?
It is commonly used in general-purpose amplification, switching and driver circuits, automotive and industrial control systems, and consumer electronics.
- What is the storage temperature range for the MSA1162GT1GH6-PANA transistor?
The storage temperature range is -55 to +150 °C.
