MRFE6VS25GNR1528
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NXP USA Inc. MRFE6VS25GNR1528

Manufacturer No:
MRFE6VS25GNR1528
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
WIDEBAND RF POWER LDMOS TRANSIST
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MRFE6VS25GNR1528 is a wideband RF power LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor produced by NXP USA Inc. This component is designed to meet the demands of various high-power RF applications, including narrowband and broadband ISM (Industrial, Scientific, and Medical), broadcast, and aerospace sectors. The MRFE6VS25GNR1528 is known for its high performance, reliability, and versatility, making it a critical component in systems requiring robust RF power handling.

Key Specifications

ParameterValue
Device TypeRF Power LDMOS Transistor
Frequency RangeNarrowband and Broadband ISM, Broadcast, Aerospace
Power OutputUp to 250 W (depending on the specific application and configuration)
Drain-Source Voltage (Vds)50 V
Gate-Source Voltage (Vgs)-6 to +10 V
Operating Temperature-40°C to +150°C
PackagingAIR cavity package

Key Features

  • High Power Handling: Capable of handling high power levels, making it suitable for demanding RF applications.
  • Wide Frequency Range: Supports both narrowband and broadband frequencies, enhancing its versatility across different applications.
  • High Reliability: Designed with robust construction and reliable performance characteristics.
  • Low Thermal Resistance: Optimized for efficient heat dissipation, ensuring stable operation under high-power conditions.
  • Compact Packaging: Available in AIR cavity packages, which are compact and suitable for various system designs.

Applications

  • Industrial, Scientific, and Medical (ISM) Applications: Used in high-power RF systems for ISM bands.
  • Broadcast Applications: Suitable for broadcast transmitters requiring high power output.
  • Aerospace Applications: Employed in aerospace systems due to its high reliability and performance under harsh conditions.
  • Radar Systems: Utilized in radar systems for its ability to handle high power and wide frequency ranges.

Q & A

  1. What is the MRFE6VS25GNR1528?
    The MRFE6VS25GNR1528 is a wideband RF power LDMOS transistor produced by NXP USA Inc.
  2. What are the typical applications of the MRFE6VS25GNR1528?
    It is used in ISM, broadcast, aerospace, and radar systems.
  3. What is the maximum power output of the MRFE6VS25GNR1528?
    The maximum power output can be up to 250 W, depending on the specific application and configuration.
  4. What is the operating temperature range of the MRFE6VS25GNR1528?
    The operating temperature range is from -40°C to +150°C.
  5. What type of packaging does the MRFE6VS25GNR1528 come in?
    It comes in an AIR cavity package.
  6. Why is the MRFE6VS25GNR1528 preferred in high-power RF applications?
    It is preferred due to its high power handling, wide frequency range, and high reliability.
  7. How does the MRFE6VS25GNR1528 manage heat dissipation?
    It is optimized for efficient heat dissipation with low thermal resistance.
  8. Can the MRFE6VS25GNR1528 be used in aerospace applications?
    Yes, it is suitable for aerospace applications due to its high reliability and performance under harsh conditions.
  9. What are the typical voltage ratings for the MRFE6VS25GNR1528?
    The drain-source voltage (Vds) is 50 V, and the gate-source voltage (Vgs) is -6 to +10 V.
  10. Where can I find detailed specifications and datasheets for the MRFE6VS25GNR1528?
    You can find detailed specifications and datasheets on the NXP Semiconductors website or through authorized distributors like Digi-Key, Mouser, etc.

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