Overview
The PSMN028-100YS115 is a high-performance N-Channel MOSFET produced by Nexperia USA Inc., formerly part of NXP USA Inc. This device is designed for high-power applications and is known for its low on-resistance and high efficiency. It is housed in the LFPAK56E package, which is a surface-mount package that offers excellent thermal performance and a small footprint.
Key Specifications
| Parameter | Value |
|---|---|
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Id - Continuous Drain Current | 42 A |
| Rds On - Drain-Source Resistance | 52 mOhms |
| Vgs - Gate-Source Voltage | Standard-level gate drive |
| Package | LFPAK56E |
| Power Dissipation (Tc) | 89 W |
| RoHS Compliance | Lead free / RoHS Compliant |
Key Features
- Low on-resistance (Rds On) of 52 mOhms, ensuring high efficiency and minimal power loss.
- High continuous drain current of 42 A, suitable for high-power applications.
- Standard-level gate drive, making it compatible with a wide range of control circuits.
- Based on Trench 14 low ohmic split-gate technology, enhancing performance and reducing spiking.
- Housed in the LFPAK56E package, offering excellent thermal performance and a compact footprint.
Applications
The PSMN028-100YS115 is ideal for various high-power applications, including but not limited to:
- Power supplies and DC-DC converters.
- Motor control and drive systems.
- Automotive systems, such as battery management and power distribution.
- Industrial power management and control systems.
Q & A
- What is the drain-source breakdown voltage of the PSMN028-100YS115?
The drain-source breakdown voltage is 100 V. - What is the continuous drain current rating of this MOSFET?
The continuous drain current is 42 A. - What is the on-resistance (Rds On) of the PSMN028-100YS115?
The on-resistance is 52 mOhms. - In what package is the PSMN028-100YS115 housed?
The device is housed in the LFPAK56E package. - Is the PSMN028-100YS115 RoHS compliant?
Yes, it is lead free and RoHS compliant. - What technology is used in the PSMN028-100YS115?
It is based on Trench 14 low ohmic split-gate technology. - What are some typical applications for the PSMN028-100YS115?
It is used in power supplies, motor control systems, automotive systems, and industrial power management. - What is the power dissipation (Tc) of the PSMN028-100YS115?
The power dissipation is 89 W. - What type of gate drive does the PSMN028-100YS115 require?
It requires a standard-level gate drive. - Why is the LFPAK56E package beneficial for this MOSFET?
The LFPAK56E package offers excellent thermal performance and a compact footprint.
