MMZ27333BT1147
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NXP USA Inc. MMZ27333BT1147

Manufacturer No:
MMZ27333BT1147
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
2 W HIGH GAIN POWER AMPLIFIER FO
Delivery:
Payment:
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Product Introduction

Overview

The MMZ27333B is a versatile 3-stage power amplifier designed by NXP USA Inc. It is targeted at driver and pre-driver applications for macro and micro base stations, as well as final-stage applications for small cells. This amplifier operates within the frequency range of 1500 to 2700 MHz, providing a gain of more than 35 dB. It is housed in a QFN 4 × 4 surface mount package and operates off a 5 V supply, with adjustable bias currents and matching networks for optimum performance in various applications.

Key Specifications

Rating Symbol Value Unit
Supply Voltage VCC 6 V
Supply Current ICC1, ICC2, ICC3 68, 240, 960 mA
RF Input Power P_in 10 dBm
Storage Temperature Range T_stg –65 to +150 °C
Junction Temperature T_j 175 °C
Thermal Resistance, Junction to Case RθJC 75, 79, 21 (Stage 1, 2, 3 respectively) °C/W

Key Features

  • Operates in the frequency range of 1500 to 2700 MHz with a gain of more than 35 dB.
  • 3-stage power amplifier design for high performance.
  • Adjustable bias currents and matching networks for optimal performance.
  • Housed in a QFN 4 × 4 surface mount package.
  • Operates off a 5 V supply.
  • High linearity and efficiency, making it suitable for cellular infrastructure applications.

Applications

  • Driver and pre-driver applications for macro and micro base stations.
  • Final-stage applications for small cells.
  • Cellular infrastructure, including base stations and small cell networks.

Q & A

  1. What is the frequency range of the MMZ27333B amplifier?

    The MMZ27333B operates within the frequency range of 1500 to 2700 MHz.

  2. What is the typical gain of the MMZ27333B amplifier?

    The MMZ27333B provides a gain of more than 35 dB.

  3. What is the supply voltage for the MMZ27333B?

    The MMZ27333B operates off a 5 V supply.

  4. What type of package does the MMZ27333B come in?

    The MMZ27333B is housed in a QFN 4 × 4 surface mount package.

  5. What are the typical applications for the MMZ27333B?

    The MMZ27333B is used in driver and pre-driver applications for macro and micro base stations, as well as final-stage applications for small cells.

  6. What is the maximum junction temperature for the MMZ27333B?

    The maximum junction temperature for the MMZ27333B is 175°C.

  7. Can the bias currents and matching networks be adjusted for the MMZ27333B?
  8. What is the maximum RF input power for the MMZ27333B?

    The maximum RF input power for the MMZ27333B is 10 dBm.

  9. What is the storage temperature range for the MMZ27333B?

    The storage temperature range for the MMZ27333B is –65 to +150°C.

  10. What are the thermal resistance values for the MMZ27333B?

    The thermal resistance values for the MMZ27333B are 75, 79, and 21 °C/W for stages 1, 2, and 3 respectively.

Product Attributes

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