BCX51-10115
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NXP USA Inc. BCX51-10115

Manufacturer No:
BCX51-10115
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
NOW NEXPERIA BCX51-10 - SMALL SI
Delivery:
Payment:
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iso45001
iso9001
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Product Introduction

Overview

The BCX51-10,115 is a PNP medium power transistor manufactured by Nexperia USA Inc. This component is part of the BCX51 series and is designed for high-current and high-power dissipation applications. It is packaged in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package, which offers excellent thermal and electrical conductivity due to its exposed heatsink.

The BCX51-10,115 is AEC-Q101 qualified, making it suitable for automotive and other demanding applications. It features three current gain selections, high current capability, and a small form factor that enhances design flexibility.

Key Specifications

Parameter Value Unit
Type Number BCX51-10 -
Package SOT89 -
Package Size 4.5 x 2.5 x 1.5 mm
Channel Type PNP -
Total Power Dissipation (Ptot) 500 mW
Maximum Collector-Emitter Voltage (VCEO) -45 V
Maximum Collector Current (IC) -1000 mA
Minimum DC Current Gain (hFE) 63 -
Maximum DC Current Gain (hFE) 160 -
Maximum Junction Temperature (TJ) 150 °C
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA -
Current - Collector Cutoff (Max) 100nA (ICBO) -
Frequency - Transition 145MHz -

Key Features

  • High current capability of up to 1 A.
  • High power dissipation capability with a total power dissipation of 500 mW.
  • Exposed heatsink for excellent thermal and electrical conductivity.
  • Three current gain selections (hFE of 63 to 160).
  • AEC-Q101 qualified, suitable for automotive and other demanding applications.
  • Small form factor (SOT89 package) that uses about 75% less board space and allows more design flexibility.
  • Low collector-emitter saturation voltage (Vce Saturation of 500mV @ 50mA, 500mA).

Applications

  • Linear voltage regulators.
  • High-side switches.
  • Battery-driven devices.
  • Power management.
  • MOSFET drivers.
  • Amplifiers.
  • Automotive applications due to AEC-Q101 qualification.

Q & A

  1. What is the maximum collector current of the BCX51-10,115 transistor?

    The maximum collector current (IC) is 1 A.

  2. What is the maximum collector-emitter voltage (VCEO) of the BCX51-10,115 transistor?

    The maximum collector-emitter voltage (VCEO) is -45 V.

  3. What is the package type of the BCX51-10,115 transistor?

    The package type is SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package.

  4. What is the maximum junction temperature (TJ) of the BCX51-10,115 transistor?

    The maximum junction temperature (TJ) is 150°C.

  5. Is the BCX51-10,115 transistor AEC-Q101 qualified?

    Yes, the BCX51-10,115 transistor is AEC-Q101 qualified.

  6. What are the typical applications of the BCX51-10,115 transistor?

    Typical applications include linear voltage regulators, high-side switches, battery-driven devices, power management, MOSFET drivers, and amplifiers.

  7. What is the minimum DC current gain (hFE) of the BCX51-10,115 transistor?

    The minimum DC current gain (hFE) is 63.

  8. What is the frequency - transition of the BCX51-10,115 transistor?

    The frequency - transition is 145MHz.

  9. Is the BCX51-10,115 transistor RoHS compliant?

    Yes, the BCX51-10,115 transistor is RoHS compliant.

  10. How does the exposed heatsink of the BCX51-10,115 transistor benefit its performance?

    The exposed heatsink provides excellent thermal and electrical conductivity, enhancing the transistor's power dissipation capability.

Product Attributes

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