BCP56-10115
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NXP USA Inc. BCP56-10115

Manufacturer No:
BCP56-10115
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
NOW NEXPERIA BCP56-10 - SMALL SI
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Payment:
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Product Introduction

Overview

The BCP56-10 is an 80 V, 1 A NPN medium power transistor produced by Nexperia (previously part of NXP Semiconductors). This transistor is housed in a SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package, designed to offer high current and power dissipation capabilities. It is widely used in various electronic applications due to its robust performance and reliability.

Key Specifications

Parameter Conditions Min Typ Max Unit
VCEO (Collector-Emitter Voltage) Open base - - 80 V
VEB0 (Emitter-Base Voltage) Open collector - - 5 V
IC (Collector Current) - - - 1 A
ICM (Peak Collector Current) Single pulse; tp ≤ 1 ms - - 2 A
IB (Base Current) - - - 0.3 A
Ptot (Total Power Dissipation) Tamb ≤ 25 °C - - 1.35 W
Tj (Junction Temperature) - - - 150 °C
hFE (DC Current Gain) VCE = 2 V; IC = 150 mA 63 - 160 -
fT (Transition Frequency) VCE = 5 V; IC = 50 mA; f = 100 MHz 100 180 - MHz

Key Features

  • High collector current capability (IC up to 1 A)
  • High power dissipation capability (Ptot up to 1.35 W)
  • Three current gain selections
  • Exposed heatsink for excellent thermal and electrical conductivity
  • AEC-Q101 qualified, suitable for automotive applications
  • Leadless very small SMD plastic package with medium power capability

Applications

  • Linear voltage regulators
  • MOSFET drivers
  • Low-side switches
  • Power management
  • Amplifiers
  • Battery-driven devices
  • Automotive and industrial applications

Q & A

  1. What is the maximum collector-emitter voltage of the BCP56-10 transistor?

    The maximum collector-emitter voltage (VCEO) is 80 V.

  2. What is the maximum collector current of the BCP56-10 transistor?

    The maximum collector current (IC) is 1 A.

  3. What is the total power dissipation capability of the BCP56-10 transistor?

    The total power dissipation (Ptot) is up to 1.35 W at an ambient temperature of 25 °C.

  4. What is the junction temperature range for the BCP56-10 transistor?

    The junction temperature (Tj) range is from -65 °C to 150 °C.

  5. Is the BCP56-10 transistor suitable for automotive applications?

    Yes, it is AEC-Q101 qualified, making it suitable for automotive applications.

  6. What package type is the BCP56-10 transistor available in?

    The BCP56-10 transistor is available in the SOT223 (SC-73) package.

  7. What are the typical applications of the BCP56-10 transistor?

    Typical applications include linear voltage regulators, MOSFET drivers, low-side switches, power management, amplifiers, and battery-driven devices.

  8. What is the transition frequency of the BCP56-10 transistor?

    The transition frequency (fT) is typically 180 MHz at VCE = 5 V and IC = 50 mA.

  9. How many current gain selections are available for the BCP56-10 transistor?

    There are three current gain selections available.

  10. What is the collector-emitter saturation voltage of the BCP56-10 transistor?

    The collector-emitter saturation voltage (VCEsat) is typically up to 500 mV at IC = 500 mA and IB = 50 mA.

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