MMBD914LT1H
  • Share:

onsemi MMBD914LT1H

Manufacturer No:
MMBD914LT1H
Manufacturer:
onsemi
Package:
Bulk
Description:
SS SOT23 SWCH DIO PBFREE
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBD914LT1H is a high-speed switching diode produced by onsemi. This component is designed for general-purpose switching applications and is particularly suited for automated insertion due to its surface-mount package. The MMBD914LT1H is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements. It is also Pb-free, halogen-free/BFR-free, and RoHS compliant.

Key Specifications

Characteristic Symbol Value Unit
Reverse Voltage VR 100 V
Forward Current IF 200 mA
Non-Repetitive Peak Forward Surge Current (t = 1 sec) IFSM 1.0 A
Non-Repetitive Peak Forward Surge Current (t = 1 µs) IFSM 2.0 A
Peak Forward Surge Current IFM(surge) 500 mA
Power Dissipation (FR-5 Board, TA = 25°C) PD 225 mW
Thermal Resistance, Junction-to-Ambient RθJA 556 °C/W
Junction and Storage Temperature Range TJ, Tstg -55 to +150 °C
Reverse Breakdown Voltage (IR = 100 µA) V(BR) 100 V
Forward Voltage (IF = 10 mA) VF 1.0 V
Reverse Recovery Time (IF = IR = 10 mA) trr 4.0 ns

Key Features

  • High-Speed Switching: The MMBD914LT1H is designed for fast switching speeds, making it suitable for high-frequency applications.
  • Surface-Mount Package: Ideal for automated insertion, this package type simplifies the manufacturing process.
  • AEC-Q101 Qualified and PPAP Capable: Meets the stringent requirements for automotive and other critical applications.
  • Pb-free, Halogen-free/BFR-free, and RoHS Compliant: Environmentally friendly and compliant with international regulations.
  • Low Forward Voltage and Fast Reverse Recovery Time: Ensures efficient operation with minimal losses.

Applications

  • Automotive Systems: Suitable for various automotive applications due to its AEC-Q101 qualification and PPAP capability.
  • General Purpose Switching: Ideal for general-purpose switching applications where high-speed switching is required.
  • Consumer Electronics: Can be used in consumer electronics for power management and signal switching.
  • Industrial Control Systems: Applicable in industrial control systems where reliable and fast switching diodes are necessary.

Q & A

  1. What is the maximum reverse voltage of the MMBD914LT1H?

    The maximum reverse voltage (VR) is 100 V.

  2. What is the forward continuous current rating of the MMBD914LT1H?

    The forward continuous current (IF) is 200 mA.

  3. What is the non-repetitive peak forward surge current of the MMBD914LT1H?

    The non-repetitive peak forward surge current (IFSM) is 1.0 A for t = 1 sec and 2.0 A for t = 1 µs.

  4. Is the MMBD914LT1H RoHS compliant?

    Yes, the MMBD914LT1H is Pb-free, halogen-free/BFR-free, and RoHS compliant.

  5. What is the thermal resistance, junction-to-ambient, of the MMBD914LT1H?

    The thermal resistance, junction-to-ambient (RθJA), is 556 °C/W.

  6. What is the junction and storage temperature range of the MMBD914LT1H?

    The junction and storage temperature range (TJ, Tstg) is -55 to +150 °C.

  7. What is the reverse breakdown voltage of the MMBD914LT1H?

    The reverse breakdown voltage (V(BR)) is 100 V at IR = 100 µA.

  8. What is the forward voltage of the MMBD914LT1H at 10 mA?

    The forward voltage (VF) is 1.0 V at IF = 10 mA.

  9. What is the reverse recovery time of the MMBD914LT1H?

    The reverse recovery time (trr) is 4.0 ns at IF = IR = 10 mA.

  10. Is the MMBD914LT1H suitable for automotive applications?

    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other critical applications.

  11. What package type does the MMBD914LT1H use?

    The MMBD914LT1H uses a SOT-23 surface-mount package.

Product Attributes

Diode Type:- 
Voltage - DC Reverse (Vr) (Max):- 
Current - Average Rectified (Io):- 
Voltage - Forward (Vf) (Max) @ If:- 
Speed:- 
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:- 
Capacitance @ Vr, F:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
Operating Temperature - Junction:- 
0 Remaining View Similar

In Stock

$0.04
7,390

Please send RFQ , we will respond immediately.

Same Series
DD15S10LVLS/AA
DD15S10LVLS/AA
CONN D-SUB HD RCPT 15POS CRIMP
DD15S20WES
DD15S20WES
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20JV5S
DD15S20JV5S
CONN D-SUB HD RCPT 15P SLDR CUP
CBC9W4S10HES/AA
CBC9W4S10HES/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S2F00X
DD26S2F00X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2F00X/AA
DD26S2F00X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32000X/AA
DD44S32000X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S00X
DD44S32S00X
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S2S50V3X
DD26S2S50V3X
CONN D-SUB HD RCPT 26P SLDR CUP
RD50S1S500S
RD50S1S500S
CONN D-SUB RCPT 50POS CRIMP
DD44S32S000
DD44S32S000
CONN D-SUB HD RCPT 44P VERT SLDR
CBC47W1S1S50V5S
CBC47W1S1S50V5S
CONN D-SUB RCPT 47POS CRIMP

Similar Products

Part Number MMBD914LT1H MMBD914LT1G
Manufacturer onsemi onsemi
Product Status Active Active
Diode Type - Standard
Voltage - DC Reverse (Vr) (Max) - 100 V
Current - Average Rectified (Io) - 200mA (DC)
Voltage - Forward (Vf) (Max) @ If - 1 V @ 10 mA
Speed - Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) - 4 ns
Current - Reverse Leakage @ Vr - 5 µA @ 75 V
Capacitance @ Vr, F - 4pF @ 0V, 1MHz
Mounting Type - Surface Mount
Package / Case - TO-236-3, SC-59, SOT-23-3
Supplier Device Package - SOT-23-3 (TO-236)
Operating Temperature - Junction - -55°C ~ 150°C

Related Product By Categories

1SS400T1G
1SS400T1G
onsemi
DIODE GEN PURP 100V 200MA SOD523
STTH2R06S
STTH2R06S
STMicroelectronics
DIODE GEN PURP 600V 2A SMC
BAS321JX
BAS321JX
Nexperia USA Inc.
BAS321J/SOD323/SOD2
BAS16HT3G
BAS16HT3G
onsemi
DIODE GEN PURP 100V 200MA SOD323
NRVBS360T3G
NRVBS360T3G
onsemi
DIODE SCHOTTKY 60V 3A SMC
NRVUS1MFA
NRVUS1MFA
onsemi
DIODE GEN PURP 1A1000V SOD123-2
NSVBAS16W1T1G
NSVBAS16W1T1G
onsemi
SS SC88 SWITCHING DIODE
MURS120-F1-0000HF
MURS120-F1-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 200V 1A DO214AC
BAV21W-7
BAV21W-7
Diodes Incorporated
DIODE GEN PURP 200V 200MA SOD123
NRVBS360BT3G
NRVBS360BT3G
onsemi
DIODE SCHOTTKY 60V 3A SMB
1N5821 B0G
1N5821 B0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 3A DO201AD
BAT54-7-F-31
BAT54-7-F-31
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA SOT23-3

Related Product By Brand

BAV70-ON
BAV70-ON
onsemi
RECTIFIER DIODE, 2 ELEMENT, 0.2A
BD138G
BD138G
onsemi
TRANS PNP 60V 1.5A TO126
MMBT3904LT1G
MMBT3904LT1G
onsemi
TRANS NPN 40V 0.2A SOT23-3
FDB024N08BL7
FDB024N08BL7
onsemi
MOSFET N-CH 80V 120A TO263-7
NCV7344AMW3R2G
NCV7344AMW3R2G
onsemi
IC TRANSCEIVER HALF 1/1 8DFNW
PCA9654EDTR2G
PCA9654EDTR2G
onsemi
IC I/O EXPANDER 8BIT I2C 16TSSOP
NCV2820MUTBG
NCV2820MUTBG
onsemi
IC AMP CLASS D MONO 8UDFN
MC33072DR2G
MC33072DR2G
onsemi
IC OPAMP JFET 2 CIRCUIT 8SOIC
NC7SZ57P6X
NC7SZ57P6X
onsemi
IC LOGIC GATE UNIV 2INPUT SC70-6
MC74VHC1GT08EDFT2G
MC74VHC1GT08EDFT2G
onsemi
IC GATE AND 1CH 2-INP SC88A
MC7812BTG
MC7812BTG
onsemi
IC REG LINEAR 12V 1A TO220AB
MC33375D-3.0
MC33375D-3.0
onsemi
IC REG LINEAR 3V 300MA 8SOIC