MBRS360PT3G
  • Share:

onsemi MBRS360PT3G

Manufacturer No:
MBRS360PT3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 60V 3A SMC-2
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MBRS360PT3G is a surface mount Schottky power rectifier produced by onsemi. This device utilizes the Schottky Barrier principle in a large area metal-to-silicon power diode, featuring state-of-the-art geometry with epitaxial construction, oxide passivation, and metal overlay contact. It is ideally suited for low voltage, high frequency rectification, as well as for use as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical.

Key Specifications

ParameterValueUnit
Peak Repetitive Reverse Voltage (VRRM)60V
Working Peak Reverse Voltage (VRWM)60V
DC Blocking Voltage (VR)60V
Average Rectified Forward Current (IF(AV))3.0 @ TL = 137°C, 4.0 @ TL = 127°CA
Nonrepetitive Peak Surge Current (IFSM)125A
Storage Temperature Range (Tstg)−65 to +175°C
Operating Junction Temperature (TJ)−65 to +175°C
Maximum Instantaneous Forward Voltage (VF) @ IF = 3.0 A, TJ = 25°C0.63V
Thermal Resistance, Junction-to-Lead (RθJL)11°C/W
Thermal Resistance, Junction-to-Ambient (RθJA)136 (min pad), 71 (1 inch square pad)°C/W

Key Features

  • Small compact surface mountable package with J-bend leads.
  • Rectangular package for automated handling.
  • Highly stable oxide passivated junction.
  • Excellent ability to withstand reverse avalanche energy transients.
  • Guard-ring for stress protection.
  • Pb-free, halogen-free/BFR-free, and RoHS compliant.
  • Corrosion-resistant external surfaces and readily solderable terminal leads.
  • Meets MSL 1 requirements.
  • ESD ratings: Machine Model, C; Human Body Model, 3B.

Applications

The MBRS360PT3G is suitable for various applications including low voltage, high frequency rectification, free wheeling diodes, and polarity protection diodes. It is particularly useful in surface mount applications where compact size and weight are critical, such as in power supplies, DC-DC converters, and other high-frequency switching circuits.

Q & A

  1. What is the peak repetitive reverse voltage of the MBRS360PT3G?
    The peak repetitive reverse voltage (VRRM) is 60 V.
  2. What is the average rectified forward current rating of the MBRS360PT3G?
    The average rectified forward current (IF(AV)) is 3.0 A at TL = 137°C and 4.0 A at TL = 127°C.
  3. What is the maximum instantaneous forward voltage of the MBRS360PT3G?
    The maximum instantaneous forward voltage (VF) at IF = 3.0 A and TJ = 25°C is 0.63 V.
  4. Is the MBRS360PT3G Pb-free and RoHS compliant?
    Yes, the MBRS360PT3G is Pb-free, halogen-free/BFR-free, and RoHS compliant.
  5. What are the thermal resistance values for the MBRS360PT3G?
    The thermal resistance from junction-to-lead (RθJL) is 11 °C/W, and from junction-to-ambient (RθJA) it is 136 °C/W (min pad) or 71 °C/W (1 inch square pad).
  6. What are the storage and operating temperature ranges for the MBRS360PT3G?
    The storage temperature range (Tstg) is −65 to +175 °C, and the operating junction temperature (TJ) range is also −65 to +175 °C.
  7. What is the nonrepetitive peak surge current rating of the MBRS360PT3G?
    The nonrepetitive peak surge current (IFSM) is 125 A.
  8. Does the MBRS360PT3G have any special packaging features?
    Yes, it comes in a rectangular package for automated handling and is available in tape and reel packaging.
  9. What are the ESD ratings for the MBRS360PT3G?
    The ESD ratings are Machine Model, C and Human Body Model, 3B.
  10. What types of applications is the MBRS360PT3G suited for?
    The MBRS360PT3G is suited for low voltage, high frequency rectification, free wheeling diodes, and polarity protection diodes in surface mount applications.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):60 V
Current - Average Rectified (Io):3A
Voltage - Forward (Vf) (Max) @ If:630 mV @ 3 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:30 µA @ 60 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:DO-214AB, SMC
Supplier Device Package:SMC
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

-
256

Please send RFQ , we will respond immediately.

Similar Products

Part Number MBRS360PT3G MBRS360T3G MBRS320PT3G MBRS330PT3G MBRS340PT3G MBRS360BT3G
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Active Obsolete Obsolete Obsolete Active
Diode Type Schottky Schottky Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 60 V 60 V 20 V 30 V 40 V 60 V
Current - Average Rectified (Io) 3A 3A 3A 3A 3A 3A
Voltage - Forward (Vf) (Max) @ If 630 mV @ 3 A 740 mV @ 3 A 500 mV @ 3 A 500 mV @ 3 A 500 mV @ 3 A 630 mV @ 3 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - - - -
Current - Reverse Leakage @ Vr 30 µA @ 60 V 150 µA @ 60 V 2 µA @ 20 V 2 mA @ 30 V 2 mA @ 40 V 30 µA @ 60 V
Capacitance @ Vr, F - - - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case DO-214AB, SMC DO-214AB, SMC DO-214AB, SMC DO-214AB, SMC DO-214AB, SMC DO-214AA, SMB
Supplier Device Package SMC SMC SMC SMC SMC SMB
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 175°C

Related Product By Categories

MBR2H100SFT3G
MBR2H100SFT3G
onsemi
DIODE SCHOTTKY 100V 2A SOD123FL
FFSD0665B-F085
FFSD0665B-F085
onsemi
650V 6A SIC SBD GEN1.5
1N4002GP
1N4002GP
Fairchild Semiconductor
RECTIFIER DIODE
MBRS130L
MBRS130L
Fairchild Semiconductor
RECTIFIER, SCHOTTKY, 2A, 30V
BAV21W-HE3-18
BAV21W-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 250MA SOD123
1N4007 BK
1N4007 BK
Central Semiconductor Corp
DIODE GPP 1A 1000V DO41 AXIAL
BAV21WS RRG
BAV21WS RRG
Taiwan Semiconductor Corporation
DIODE GEN PURP 250V 200MA SOD323
MUR160A
MUR160A
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
MBRS130LT3
MBRS130LT3
onsemi
DIODE SCHOTTKY 30V 1A SMB
MUR120RL
MUR120RL
onsemi
DIODE GEN PURP 200V 1A AXIAL
BYC10X-600PQ
BYC10X-600PQ
WeEn Semiconductors
DIODE GEN PURP 600V 10A TO220F
BAT43 A0G
BAT43 A0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA DO35

Related Product By Brand

1SMB5918BT3G
1SMB5918BT3G
onsemi
DIODE ZENER 5.1V 3W SMB
SBC856ALT1G
SBC856ALT1G
onsemi
TRANS PNP 65V 0.1A SOT23-3
MJD44H11G
MJD44H11G
onsemi
TRANS NPN 80V 8A DPAK
FDMT800100DC
FDMT800100DC
onsemi
MOSFET N-CH 100V 24A/162A 8DUAL
NCD9830DBR2G
NCD9830DBR2G
onsemi
IC ADC 8BIT SAR 16TSSOP
NCS2325DR2G
NCS2325DR2G
onsemi
IC OPAMP ZER-DRIFT 2CIRC 8SOIC
MC74HC32ADTEL
MC74HC32ADTEL
onsemi
IC GATE OR 4CH 2-INP 14TSSOP
74HC04DR2G
74HC04DR2G
onsemi
IC INVERTER 6CH 1-INP 14SOIC
MC74AC139DR2G
MC74AC139DR2G
onsemi
IC DECODER/DEMUX 1X2:4 16SOIC
CAT24C512C8UTR
CAT24C512C8UTR
onsemi
IC EEPROM 512KBIT I2C 8WLCSP
UC3843AD1G
UC3843AD1G
onsemi
UC3843 CURRENT-MODE PWM CONTROLL
NCV1117ST18T3G
NCV1117ST18T3G
onsemi
IC REG LINEAR 1.8V 1A SOT223