Overview
The MBRS1100T3H is a Schottky Power Rectifier produced by onsemi, designed for high-performance applications requiring low voltage and high frequency rectification. This device utilizes the Schottky Barrier principle in a large area metal-to-silicon power diode, featuring state-of-the-art geometry with epitaxial construction, oxide passivation, and metal overlay contact. It is ideally suited for surface mount applications where compact size and weight are critical.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Peak Repetitive Reverse Voltage | VRRM | 100 | V |
| Working Peak Reverse Voltage | VRWM | 100 | V |
| DC Blocking Voltage | VR | 100 | V |
| Average Rectified Forward Current | IF(AV) | 1.0 A (TL = 163°C), 2.0 A (TL = 148°C) | A |
| Non-Repetitive Peak Surge Current | IFSM | 50 A | A |
| Operating Junction Temperature | TJ | -65 to +175 °C | °C |
| Maximum Instantaneous Forward Voltage | VF | 0.75 V (iF = 1.0 A, TJ = 25°C) | V |
| Maximum Instantaneous Reverse Current | IR | 0.5 mA (TJ = 25°C), 5.0 mA (TJ = 100°C) | mA |
| Thermal Resistance - Junction-to-Lead | RθJL | 22 °C/W | °C/W |
| Package | SMB (Surface Mount) | ||
| Weight | Approximately 95 mg | mg | |
| Lead and Mounting Surface Temperature for Soldering | 260°C Max. for 10 Seconds | °C |
Key Features
- Small, compact surface mountable package with J-bend leads.
- Rectangular package for automated handling.
- Highly stable oxide passivated junction.
- High blocking voltage of 100 volts.
- Operating junction temperature up to 175°C.
- Guardring for stress protection.
- HBM Class 3B, CDM(AEC) Class C5.
- AEC-Q101 qualified and PPAP capable.
- Pb-free device.
- Corrosion-resistant external surfaces and readily solderable terminal leads.
Applications
The MBRS1100T3H is suitable for various applications including:
- Low voltage, high frequency rectification.
- Free wheeling diodes.
- Polarity protection diodes.
- Surface mount applications where compact size and weight are critical.
Q & A
- What is the peak repetitive reverse voltage of the MBRS1100T3H?
The peak repetitive reverse voltage (VRRM) is 100 volts.
- What is the average rectified forward current rating for this device?
The average rectified forward current (IF(AV)) is 1.0 A at a lead temperature (TL) of 163°C and 2.0 A at TL of 148°C.
- What is the maximum operating junction temperature for the MBRS1100T3H?
The operating junction temperature (TJ) can range from -65 to +175 °C.
- What is the maximum instantaneous forward voltage of the MBRS1100T3H?
The maximum instantaneous forward voltage (VF) is 0.75 V at an forward current (iF) of 1.0 A and a junction temperature (TJ) of 25°C.
- Is the MBRS1100T3H Pb-free?
- What is the thermal resistance - junction-to-lead for this device?
The thermal resistance - junction-to-lead (RθJL) is 22 °C/W.
- What package type is used for the MBRS1100T3H?
The device is packaged in an SMB (Surface Mount) package.
- What are the dimensions and weight of the MBRS1100T3H?
The device weighs approximately 95 mg and has specific dimensions outlined in the datasheet.
- Is the MBRS1100T3H AEC-Q101 qualified?
- What are the soldering temperature limits for the MBRS1100T3H?
The lead and mounting surface temperature for soldering should not exceed 260°C for 10 seconds.
