MBRM120ET1H
  • Share:

onsemi MBRM120ET1H

Manufacturer No:
MBRM120ET1H
Manufacturer:
onsemi
Package:
Bulk
Description:
DIODE SCHOTTKY
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MBRM120ET1H is a Schottky power rectifier produced by onsemi, designed for high-efficiency and compact applications. This surface-mount device utilizes the Schottky Barrier principle with a barrier metal and epitaxial construction, offering an optimal forward voltage drop and reverse current tradeoff. The POWERMITE package is highly efficient, micro miniature, and space-saving, making it ideal for use in portable and battery-powered products.

Key Specifications

Parameter Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM 20 V
Average Rectified Forward Current (At Rated VR, TC = 135°C) IO 1.0 A
Peak Repetitive Forward Current (At Rated VR, Square Wave, 100 kHz, TC = 135°C) IFRM 2.0 A
Non-Repetitive Peak Surge Current (Halfwave, Single Phase, 60 Hz) IFSM 50 A
Storage Temperature Tstg -55 to 150 °C
Operating Junction Temperature TJ -55 to 125 °C
Voltage Rate of Change (Rated VR, TJ = 25°C) dv/dt 10,000 V/μs

Key Features

  • Low Profile: Maximum height of 1.1 mm, making it one of the lowest height profiles in the industry.
  • Small Footprint: Footprint area of 8.45 mm², ideal for space-saving designs.
  • Low VF: Provides higher efficiency and extends battery life.
  • ESD Ratings: Human Body Model = 3B (> 16 kV), Machine Model = C (> 400 V).
  • Thermal Performance: Low thermal resistance with a direct thermal path of the die on the exposed cathode heat sink.
  • Packaging: Supplied in 12 mm tape and reel, Pb-free packages.
  • Qualifications: AEC-Q101 qualified and PPAP capable, with NRVB prefix for automotive and other applications requiring unique site and control change requirements.

Applications

The MBRM120ET1H is suitable for various applications where performance and size are critical. These include:

  • Portable and battery-powered products such as cellular and cordless phones, chargers, notebook computers, printers, PDAs, and PCMCIA cards.
  • AC-DC and DC-DC converters.
  • Reverse battery protection.
  • 'ORing' of multiple supply voltages.

Q & A

  1. What is the peak repetitive reverse voltage of the MBRM120ET1H?

    The peak repetitive reverse voltage (VRRM) is 20 V.

  2. What is the average rectified forward current of the MBRM120ET1H?

    The average rectified forward current (IO) is 1.0 A at a rated VR and TC = 135°C.

  3. What is the maximum height of the MBRM120ET1H package?

    The maximum height is 1.1 mm.

  4. What are the ESD ratings for the MBRM120ET1H?

    The ESD ratings are Human Body Model = 3B (> 16 kV) and Machine Model = C (> 400 V).

  5. Is the MBRM120ET1H AEC-Q101 qualified?
  6. What is the storage temperature range for the MBRM120ET1H?

    The storage temperature range is -55°C to 150°C.

  7. What is the operating junction temperature range for the MBRM120ET1H?

    The operating junction temperature range is -55°C to 125°C.

  8. What is the non-repetitive peak surge current of the MBRM120ET1H?

    The non-repetitive peak surge current (IFSM) is 50 A.

  9. Is the MBRM120ET1H Pb-free?
  10. What are typical applications for the MBRM120ET1H?

    Typical applications include AC-DC and DC-DC converters, reverse battery protection, and 'ORing' of multiple supply voltages.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):20 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:595 mV @ 2 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:10 µA @ 20 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:DO-216AA
Supplier Device Package:Powermite
Operating Temperature - Junction:-65°C ~ 150°C
0 Remaining View Similar

In Stock

-
80

Please send RFQ , we will respond immediately.

Same Series
CBC46W4S100T2X
CBC46W4S100T2X
CONN D-SUB RCPT 46POS CRIMP
DD15S20W0S/AA
DD15S20W0S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M20HE2Z/AA
DD26M20HE2Z/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26S200E30/AA
DD26S200E30/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200T20/AA
DD26S200T20/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32000X
DD44S32000X
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S200EX
DD26S200EX
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V30/AA
DD26S2S50V30/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50T2X
DD26S2S50T2X
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S0T2X
DD44S32S0T2X
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S50T2X/AA
DD44S32S50T2X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S2S5W0X/AA
DD26S2S5W0X/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number MBRM120ET1H MBRM120ET1 MBRM120ET1G
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Obsolete Active
Diode Type Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 20 V 20 V 20 V
Current - Average Rectified (Io) 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 595 mV @ 2 A 530 mV @ 1 A 530 mV @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - -
Current - Reverse Leakage @ Vr 10 µA @ 20 V 10 µA @ 20 V 10 µA @ 20 V
Capacitance @ Vr, F - - -
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case DO-216AA DO-216AA DO-216AA
Supplier Device Package Powermite Powermite Powermite
Operating Temperature - Junction -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C

Related Product By Categories

NRVB130T1G
NRVB130T1G
onsemi
DIODE SCHOTTKY 30V 1A SOD123
STPS20SM100ST
STPS20SM100ST
STMicroelectronics
DIODE SCHOTTKY 100V 20A TO220AB
BYV29-500,127
BYV29-500,127
WeEn Semiconductors
DIODE GEN PURP 500V 9A TO220AC
BAS321JX
BAS321JX
Nexperia USA Inc.
BAS321J/SOD323/SOD2
BAS16HT3G
BAS16HT3G
onsemi
DIODE GEN PURP 100V 200MA SOD323
STTH3002G-TR
STTH3002G-TR
STMicroelectronics
DIODE GEN PURP 200V 30A D2PAK
BAS16WS-G3-08
BAS16WS-G3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 250MA SOD323
BAT54W-E3-18
BAT54W-E3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
BAS21Q-7-F
BAS21Q-7-F
Diodes Incorporated
DIODE GP SW SOT23
BAS21E6433HTMA1
BAS21E6433HTMA1
Infineon Technologies
DIODE GEN PURP 200V 250MA SOT23
MBRS330T3
MBRS330T3
onsemi
DIODE SCHOTTKY 30V 4A SMC
BAT54-7-F-31
BAT54-7-F-31
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA SOT23-3

Related Product By Brand

ESD9D5.0ST5G
ESD9D5.0ST5G
onsemi
TVS DIODE 5VWM 13.5VC SOD923
MMSZ5267BT1G
MMSZ5267BT1G
onsemi
DIODE ZENER 75V 500MW SOD123
NJVMJD31T4G
NJVMJD31T4G
onsemi
TRANS NPN 40V 3A DPAK
MPSA42G
MPSA42G
onsemi
TRANS NPN 300V 0.5A TO92
NVMFS5C410NLWFT3G
NVMFS5C410NLWFT3G
onsemi
MOSFET N-CH 40V 48A/315A 5DFN
PCA9654EDTR2G
PCA9654EDTR2G
onsemi
IC I/O EXPANDER 8BIT I2C 16TSSOP
MC74HC00ANG
MC74HC00ANG
onsemi
IC GATE NAND 4CH 2-INP 14DIP
NCP1076BBP100G
NCP1076BBP100G
onsemi
IC OFFLINE SWITCH FLYBACK 8DIP
ADP3110AKRZ
ADP3110AKRZ
onsemi
IC GATE DRVR HALF-BRIDGE 8SOIC
MC78M05BDTT5G
MC78M05BDTT5G
onsemi
IC REG LINEAR 5V 500MA DPAK
MC33269DTRK-3.3
MC33269DTRK-3.3
onsemi
IC REG LDO 0.8A 3.3V DPAK
FOD817B3SD
FOD817B3SD
onsemi
OPTOISOLATOR 5KV TRANSISTOR 4SMD