MBRM120ET1H
  • Share:

onsemi MBRM120ET1H

Manufacturer No:
MBRM120ET1H
Manufacturer:
onsemi
Package:
Bulk
Description:
DIODE SCHOTTKY
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MBRM120ET1H is a Schottky power rectifier produced by onsemi, designed for high-efficiency and compact applications. This surface-mount device utilizes the Schottky Barrier principle with a barrier metal and epitaxial construction, offering an optimal forward voltage drop and reverse current tradeoff. The POWERMITE package is highly efficient, micro miniature, and space-saving, making it ideal for use in portable and battery-powered products.

Key Specifications

Parameter Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM 20 V
Average Rectified Forward Current (At Rated VR, TC = 135°C) IO 1.0 A
Peak Repetitive Forward Current (At Rated VR, Square Wave, 100 kHz, TC = 135°C) IFRM 2.0 A
Non-Repetitive Peak Surge Current (Halfwave, Single Phase, 60 Hz) IFSM 50 A
Storage Temperature Tstg -55 to 150 °C
Operating Junction Temperature TJ -55 to 125 °C
Voltage Rate of Change (Rated VR, TJ = 25°C) dv/dt 10,000 V/μs

Key Features

  • Low Profile: Maximum height of 1.1 mm, making it one of the lowest height profiles in the industry.
  • Small Footprint: Footprint area of 8.45 mm², ideal for space-saving designs.
  • Low VF: Provides higher efficiency and extends battery life.
  • ESD Ratings: Human Body Model = 3B (> 16 kV), Machine Model = C (> 400 V).
  • Thermal Performance: Low thermal resistance with a direct thermal path of the die on the exposed cathode heat sink.
  • Packaging: Supplied in 12 mm tape and reel, Pb-free packages.
  • Qualifications: AEC-Q101 qualified and PPAP capable, with NRVB prefix for automotive and other applications requiring unique site and control change requirements.

Applications

The MBRM120ET1H is suitable for various applications where performance and size are critical. These include:

  • Portable and battery-powered products such as cellular and cordless phones, chargers, notebook computers, printers, PDAs, and PCMCIA cards.
  • AC-DC and DC-DC converters.
  • Reverse battery protection.
  • 'ORing' of multiple supply voltages.

Q & A

  1. What is the peak repetitive reverse voltage of the MBRM120ET1H?

    The peak repetitive reverse voltage (VRRM) is 20 V.

  2. What is the average rectified forward current of the MBRM120ET1H?

    The average rectified forward current (IO) is 1.0 A at a rated VR and TC = 135°C.

  3. What is the maximum height of the MBRM120ET1H package?

    The maximum height is 1.1 mm.

  4. What are the ESD ratings for the MBRM120ET1H?

    The ESD ratings are Human Body Model = 3B (> 16 kV) and Machine Model = C (> 400 V).

  5. Is the MBRM120ET1H AEC-Q101 qualified?
  6. What is the storage temperature range for the MBRM120ET1H?

    The storage temperature range is -55°C to 150°C.

  7. What is the operating junction temperature range for the MBRM120ET1H?

    The operating junction temperature range is -55°C to 125°C.

  8. What is the non-repetitive peak surge current of the MBRM120ET1H?

    The non-repetitive peak surge current (IFSM) is 50 A.

  9. Is the MBRM120ET1H Pb-free?
  10. What are typical applications for the MBRM120ET1H?

    Typical applications include AC-DC and DC-DC converters, reverse battery protection, and 'ORing' of multiple supply voltages.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):20 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:595 mV @ 2 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:10 µA @ 20 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:DO-216AA
Supplier Device Package:Powermite
Operating Temperature - Junction:-65°C ~ 150°C
0 Remaining View Similar

In Stock

-
80

Please send RFQ , we will respond immediately.

Same Series
DD15S2S5WV30/AA
DD15S2S5WV30/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20WTS/AA
DD15S20WTS/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S10LVLS
DD15S10LVLS
CONN D-SUB HD RCPT 15POS CRIMP
DD15S20JV3S
DD15S20JV3S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M20HV50/AA
DD26M20HV50/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26S2S500X
DD26S2S500X
CONN D-SUB HD RCPT 26P SLDR CUP
M24308/24-67Z
M24308/24-67Z
CONN D-SUB HD PLUG 15POS SLDR
DD26S200T2X
DD26S200T2X
CONN D-SUB HD RCPT 26P SLDR CUP
CBC9W4S10HE3S/AA
CBC9W4S10HE3S/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S200EX
DD26S200EX
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S3200T20
DD44S3200T20
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S000
DD44S32S000
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number MBRM120ET1H MBRM120ET1 MBRM120ET1G
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Obsolete Active
Diode Type Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 20 V 20 V 20 V
Current - Average Rectified (Io) 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 595 mV @ 2 A 530 mV @ 1 A 530 mV @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - -
Current - Reverse Leakage @ Vr 10 µA @ 20 V 10 µA @ 20 V 10 µA @ 20 V
Capacitance @ Vr, F - - -
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case DO-216AA DO-216AA DO-216AA
Supplier Device Package Powermite Powermite Powermite
Operating Temperature - Junction -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C

Related Product By Categories

PMEG2005AESFC315
PMEG2005AESFC315
NXP USA Inc.
RECTIFIER DIODE, SCHOTTKY
NRVTSA4100ET3G
NRVTSA4100ET3G
onsemi
DIODE SCHOTTKY 100V 4A SMA
MUR840G
MUR840G
onsemi
DIODE GEN PURP 400V 8A TO220AC
STPS20L15D
STPS20L15D
STMicroelectronics
DIODE SCHOTTKY 15V 20A TO220AC
MBRD835LG
MBRD835LG
onsemi
DIODE SCHOTTKY 35V 8A DPAK
MBRS130
MBRS130
Fairchild Semiconductor
RECTIFIER, SCHOTTKY, 1A, 30V
PMEG6020ELR-QX
PMEG6020ELR-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
1N4004GP
1N4004GP
onsemi
DIODE GEN PURP 400V 1A DO41
1N4148TR_S00Z
1N4148TR_S00Z
onsemi
DIODE GEN PURP 100V 200MA DO35
STTH20R04G
STTH20R04G
STMicroelectronics
DIODE GEN PURP 400V 20A D2PAK
1N5821 B0G
1N5821 B0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 3A DO201AD
BAS321-QX
BAS321-QX
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP

Related Product By Brand

BAW56LT3G
BAW56LT3G
onsemi
DIODE ARRAY GP 70V 200MA SOT23-3
BAV70-ON
BAV70-ON
onsemi
RECTIFIER DIODE, 2 ELEMENT, 0.2A
SURA8210T3G
SURA8210T3G
onsemi
DIODE GEN PURP 100V 2A SMA
NRVBS240LT3G
NRVBS240LT3G
onsemi
DIODE SCHOTTKY 40V 2A SMB
NJVMJD31T4G
NJVMJD31T4G
onsemi
TRANS NPN 40V 3A DPAK
MJD44H11TF
MJD44H11TF
onsemi
TRANS NPN 80V 8A DPAK
NTB6413ANG
NTB6413ANG
onsemi
MOSFET N-CH 100V 42A D2PAK
NVMFS5C410NLWFT3G
NVMFS5C410NLWFT3G
onsemi
MOSFET N-CH 40V 48A/315A 5DFN
NCS36000DRG
NCS36000DRG
onsemi
IC PIR DETECTOR CTLR 14SOIC
NCV7720DQR2G
NCV7720DQR2G
onsemi
IC MOTOR DRVR 3.15V-5.25V 24SSOP
LM337TG
LM337TG
onsemi
IC REG LIN NEG ADJ 1.5A TO220
LM2903DR2GH
LM2903DR2GH
onsemi
FIXED POSITIVE LDO REGULATOR