MBRM120ET1H
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onsemi MBRM120ET1H

Manufacturer No:
MBRM120ET1H
Manufacturer:
onsemi
Package:
Bulk
Description:
DIODE SCHOTTKY
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MBRM120ET1H is a Schottky power rectifier produced by onsemi, designed for high-efficiency and compact applications. This surface-mount device utilizes the Schottky Barrier principle with a barrier metal and epitaxial construction, offering an optimal forward voltage drop and reverse current tradeoff. The POWERMITE package is highly efficient, micro miniature, and space-saving, making it ideal for use in portable and battery-powered products.

Key Specifications

Parameter Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM 20 V
Average Rectified Forward Current (At Rated VR, TC = 135°C) IO 1.0 A
Peak Repetitive Forward Current (At Rated VR, Square Wave, 100 kHz, TC = 135°C) IFRM 2.0 A
Non-Repetitive Peak Surge Current (Halfwave, Single Phase, 60 Hz) IFSM 50 A
Storage Temperature Tstg -55 to 150 °C
Operating Junction Temperature TJ -55 to 125 °C
Voltage Rate of Change (Rated VR, TJ = 25°C) dv/dt 10,000 V/μs

Key Features

  • Low Profile: Maximum height of 1.1 mm, making it one of the lowest height profiles in the industry.
  • Small Footprint: Footprint area of 8.45 mm², ideal for space-saving designs.
  • Low VF: Provides higher efficiency and extends battery life.
  • ESD Ratings: Human Body Model = 3B (> 16 kV), Machine Model = C (> 400 V).
  • Thermal Performance: Low thermal resistance with a direct thermal path of the die on the exposed cathode heat sink.
  • Packaging: Supplied in 12 mm tape and reel, Pb-free packages.
  • Qualifications: AEC-Q101 qualified and PPAP capable, with NRVB prefix for automotive and other applications requiring unique site and control change requirements.

Applications

The MBRM120ET1H is suitable for various applications where performance and size are critical. These include:

  • Portable and battery-powered products such as cellular and cordless phones, chargers, notebook computers, printers, PDAs, and PCMCIA cards.
  • AC-DC and DC-DC converters.
  • Reverse battery protection.
  • 'ORing' of multiple supply voltages.

Q & A

  1. What is the peak repetitive reverse voltage of the MBRM120ET1H?

    The peak repetitive reverse voltage (VRRM) is 20 V.

  2. What is the average rectified forward current of the MBRM120ET1H?

    The average rectified forward current (IO) is 1.0 A at a rated VR and TC = 135°C.

  3. What is the maximum height of the MBRM120ET1H package?

    The maximum height is 1.1 mm.

  4. What are the ESD ratings for the MBRM120ET1H?

    The ESD ratings are Human Body Model = 3B (> 16 kV) and Machine Model = C (> 400 V).

  5. Is the MBRM120ET1H AEC-Q101 qualified?
  6. What is the storage temperature range for the MBRM120ET1H?

    The storage temperature range is -55°C to 150°C.

  7. What is the operating junction temperature range for the MBRM120ET1H?

    The operating junction temperature range is -55°C to 125°C.

  8. What is the non-repetitive peak surge current of the MBRM120ET1H?

    The non-repetitive peak surge current (IFSM) is 50 A.

  9. Is the MBRM120ET1H Pb-free?
  10. What are typical applications for the MBRM120ET1H?

    Typical applications include AC-DC and DC-DC converters, reverse battery protection, and 'ORing' of multiple supply voltages.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):20 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:595 mV @ 2 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:10 µA @ 20 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:DO-216AA
Supplier Device Package:Powermite
Operating Temperature - Junction:-65°C ~ 150°C
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Similar Products

Part Number MBRM120ET1H MBRM120ET1 MBRM120ET1G
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Obsolete Active
Diode Type Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 20 V 20 V 20 V
Current - Average Rectified (Io) 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 595 mV @ 2 A 530 mV @ 1 A 530 mV @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - -
Current - Reverse Leakage @ Vr 10 µA @ 20 V 10 µA @ 20 V 10 µA @ 20 V
Capacitance @ Vr, F - - -
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case DO-216AA DO-216AA DO-216AA
Supplier Device Package Powermite Powermite Powermite
Operating Temperature - Junction -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C

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