MBR120ESFT1G
  • Share:

onsemi MBR120ESFT1G

Manufacturer No:
MBR120ESFT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 20V 1A SOD123L
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MBR120ESFT1G is a surface mount Schottky power rectifier produced by onsemi. This device utilizes the Schottky Barrier principle, making it ideally suited for low voltage, high current applications. It is packaged in the SOD-123FL format, which is compact and suitable for a variety of modern electronic designs. The MBR120ESFT1G is known for its high efficiency and reliability, making it a popular choice in various power management and rectification needs.

Key Specifications

ParameterValue
Forward Current (IF)1 A
Forward Voltage Drop (VF)530 mV @ 1 A
Reverse Current (IR)10 μA
Forward Surge Current (IFSM)40 A
Minimum Operating Temperature-65°C
Maximum Operating Temperature+150°C
PackageSOD-123FL

Key Features

  • High efficiency due to low forward voltage drop
  • High surge current capability
  • Compact SOD-123FL package
  • Wide operating temperature range (-65°C to +150°C)
  • RoHS compliant

Applications

The MBR120ESFT1G is suitable for a variety of applications, including power supplies, DC-DC converters, battery chargers, and other power management circuits where high efficiency and reliability are crucial. It is also used in automotive and industrial systems where robustness and high temperature tolerance are required.

Q & A

  1. What is the forward current rating of the MBR120ESFT1G?
    The forward current rating is 1 A.
  2. What is the forward voltage drop at 1 A?
    The forward voltage drop at 1 A is 530 mV.
  3. What is the maximum operating temperature of the MBR120ESFT1G?
    The maximum operating temperature is +150°C.
  4. What is the package type of the MBR120ESFT1G?
    The package type is SOD-123FL.
  5. Is the MBR120ESFT1G RoHS compliant?
    Yes, the MBR120ESFT1G is RoHS compliant.
  6. What is the minimum operating temperature of the MBR120ESFT1G?
    The minimum operating temperature is -65°C.
  7. What is the reverse current of the MBR120ESFT1G?
    The reverse current is 10 μA.
  8. What is the forward surge current rating of the MBR120ESFT1G?
    The forward surge current rating is 40 A.
  9. In what types of applications is the MBR120ESFT1G commonly used?
    The MBR120ESFT1G is commonly used in power supplies, DC-DC converters, battery chargers, and other power management circuits.
  10. Why is the Schottky Barrier principle important in the MBR120ESFT1G?
    The Schottky Barrier principle is important because it allows for low forward voltage drop and high efficiency, making the device suitable for low voltage, high current applications.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):20 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:530 mV @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:10 µA @ 20 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:SOD-123F
Supplier Device Package:SOD-123FL
Operating Temperature - Junction:-65°C ~ 150°C
0 Remaining View Similar

In Stock

$0.41
1,876

Please send RFQ , we will respond immediately.

Same Series
MBR120ESFT3G
MBR120ESFT3G
DIODE SCHOTTKY 20V 1A SOD123FL
NRVB120ESFT1G
NRVB120ESFT1G
DIODE SCHOTTKY 20V 1A SOD123
NRVB120ESFT3G
NRVB120ESFT3G
DIODE SCHOTTKY 20V 1A SOD123

Similar Products

Part Number MBR120ESFT1G MBR120ESFT3G MBR140ESFT1G MBR120LSFT1G MBR120ESFT1
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Obsolete
Diode Type Schottky Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 20 V 20 V 40 V 20 V 20 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 530 mV @ 1 A 530 mV @ 1 A 560 mV @ 1 A 450 mV @ 1 A 530 mV @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - - -
Current - Reverse Leakage @ Vr 10 µA @ 20 V 10 µA @ 20 V 30 µA @ 40 V 400 µA @ 20 V 10 µA @ 20 V
Capacitance @ Vr, F - - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SOD-123F SOD-123F SOD-123F SOD-123F SOD-123F
Supplier Device Package SOD-123FL SOD-123FL SOD-123FL SOD-123FL SOD-123FL
Operating Temperature - Junction -65°C ~ 150°C -65°C ~ 150°C -55°C ~ 175°C -55°C ~ 125°C -65°C ~ 150°C

Related Product By Categories

PMEG4020EPASX
PMEG4020EPASX
Nexperia USA Inc.
DIODE SCHOTTKY 40V 2A DFN2020D-3
BAV21WS-AQ
BAV21WS-AQ
Diotec Semiconductor
DIODE SOD-323 250V 0.2A 50NS
STPSC4H065D
STPSC4H065D
STMicroelectronics
DIODE SCHOTTKY 650V 4A TO220AC
MURA160T3G
MURA160T3G
onsemi
DIODE GEN PURP 600V 1A SMA
FFSH15120A
FFSH15120A
onsemi
1200V 15A SIC SBD
BAS16HT3G
BAS16HT3G
onsemi
DIODE GEN PURP 100V 200MA SOD323
BAS21E6433HTMA1
BAS21E6433HTMA1
Infineon Technologies
DIODE GEN PURP 200V 250MA SOT23
PMEG6020ELR-QX
PMEG6020ELR-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
PMEG4010ER-QX
PMEG4010ER-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
STTH30L06G
STTH30L06G
STMicroelectronics
DIODE GEN PURP 600V 30A D2PAK
MUR440G
MUR440G
onsemi
DIODE GEN PURP 400V 4A DO201AD
1N4001GPHE3/54
1N4001GPHE3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 1A DO204AL

Related Product By Brand

SBAS16WT1G
SBAS16WT1G
onsemi
DIODE GEN PURP 75V 200MA SC70
1N5353BRLG
1N5353BRLG
onsemi
DIODE ZENER 16V 5W AXIAL
MMSZ5233BT1G
MMSZ5233BT1G
onsemi
DIODE ZENER 6V 500MW SOD123
BC547BTAR
BC547BTAR
onsemi
TRANS NPN 45V 0.1A TO92-3
NTUD3127CT5G
NTUD3127CT5G
onsemi
MOSFET N/P-CH 20V SOT-963
2N7002KW
2N7002KW
onsemi
MOSFET N-CH 60V 310MA SC70
FDB024N08BL7
FDB024N08BL7
onsemi
MOSFET N-CH 80V 120A TO263-7
CAT24C02YI-GT3JN
CAT24C02YI-GT3JN
onsemi
IC EEPROM 2KBIT I2C 8TSSOP
LC709203FXE-01MH
LC709203FXE-01MH
onsemi
IC BATT MON LI-ION 1CELL 9WLCSP
MAX809SQ232T1G
MAX809SQ232T1G
onsemi
IC SUPERVISOR 1 CHANNEL SC70-3
NCP432BISNT1G
NCP432BISNT1G
onsemi
IC VREF SHUNT ADJ 0.5% SOT23-3
NCV57080BDR2G
NCV57080BDR2G
onsemi
ISOLATED HIGH CURRENT GATE DRIVE