LE25S161PCTXG
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onsemi LE25S161PCTXG

Manufacturer No:
LE25S161PCTXG
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
IC FLASH 16MBIT SPI 70MHZ 8UDFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The LE25S161PCTXG is a 16 Mbit Serial Flash Memory device produced by onsemi. This device features a 2048K x 8-bit configuration and operates on a single power supply voltage range of 1.65 to 1.95 V. It is housed in an ultra-miniature 8-pin UDFN8 package, making it ideal for applications requiring compact dimensions. The LE25S161PCTXG supports SPI bus interface with both SPI mode 0 and SPI mode 3, and it includes advanced features such as small sector erase, sector erase, and chip erase functions, which are beneficial for storing parameters or data with limited rewrite cycles.

Key Specifications

Parameter Value
Memory Capacity 16 Mbit (2048K x 8-bit)
Supply Voltage Range 1.65 to 1.95 V
Operating Frequency Up to 70 MHz
Temperature Range –40 to +90°C
Serial Interface SPI Mode 0, Mode 3 Supported
Sector Size 4 kbytes/Small Sector, 64 kbytes/Sector
Erase Functions Small Sector Erase (SSE), Sector Erase (SE), Chip Erase (CHE)
Page Program Function 256 bytes/Page
Status Functions Ready/Busy Information, Protect Information
Low Operation Current 5.0 mA (Low-power Program Mode, Typ), 3.5 mA (Low-Power Read Mode, Typ)
Erase Time 10 ms (SSE, Typ), 15 ms (SE, Typ), 210 ms (CHE, Typ)
Page Program Time 0.4 ms/256 bytes (Typ.), 0.7 ms/256 bytes (Max.)
Reliability 100,000 Erase/Program Cycles, 20 Years Data Retention Period
Package UDFN8 4 x 3, 0.8P, CASE 506DC

Key Features

  • Compact Package: Ultra-miniature 8-pin UDFN8 package, ideal for portable and compact devices.
  • Low Power Consumption: Low operation current in both program and read modes.
  • High-Speed Read: Supports high-speed read operations up to 70 MHz.
  • Dual SPI Modes: Supports Dual SPI operations for faster data transfer.
  • Flexible Erase Functions: Small sector erase, sector erase, and chip erase capabilities.
  • High Reliability: 100,000 erase/program cycles and 20 years data retention period.
  • Electronic Identification: JDEC ID, Device ID, and Serial Flash Discoverable Parameter (SFDP) supported.

Applications

The LE25S161PCTXG is suitable for a variety of applications that require non-volatile memory with high reliability and compact form factors. These include:

  • Portable information devices such as smartphones, tablets, and wearables.
  • Industrial control systems and IoT devices that need robust and reliable memory solutions.
  • Automotive systems where high temperature range and reliability are critical.
  • Consumer electronics such as set-top boxes, gaming consoles, and other multimedia devices.

Q & A

  1. What is the memory capacity of the LE25S161PCTXG?

    The LE25S161PCTXG has a memory capacity of 16 Mbit (2048K x 8-bit).

  2. What is the operating voltage range of the LE25S161PCTXG?

    The operating voltage range is 1.65 to 1.95 V.

  3. What are the supported SPI modes for the LE25S161PCTXG?

    The device supports SPI mode 0 and SPI mode 3.

  4. What are the erase functions available on the LE25S161PCTXG?

    The device supports small sector erase (SSE), sector erase (SE), and chip erase (CHE) functions.

  5. What is the maximum operating frequency of the LE25S161PCTXG?

    The maximum operating frequency is up to 70 MHz.

  6. What is the package type of the LE25S161PCTXG?

    The device is housed in an ultra-miniature 8-pin UDFN8 package.

  7. How many erase/program cycles can the LE25S161PCTXG handle?

    The device can handle 100,000 erase/program cycles.

  8. What is the data retention period of the LE25S161PCTXG?

    The data retention period is 20 years.

  9. Does the LE25S161PCTXG support dual SPI operations?

    Yes, the device supports dual SPI operations for faster data transfer.

  10. What are some typical applications for the LE25S161PCTXG?

    Typical applications include portable information devices, industrial control systems, automotive systems, and consumer electronics.

Product Attributes

Memory Type:Non-Volatile
Memory Format:Flash
Technology:Flash
Memory Size:16Mb (2M x 8)
Memory Interface:SPI
Clock Frequency:70 MHz
Write Cycle Time - Word, Page:700µs
Access Time:- 
Voltage - Supply:1.65V ~ 1.95V
Operating Temperature:-40°C ~ 90°C (TA)
Mounting Type:Surface Mount
Package / Case:8-UDFN Exposed Pad
Supplier Device Package:8-UDFN (4x3)
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