KSE350STU
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onsemi KSE350STU

Manufacturer No:
KSE350STU
Manufacturer:
onsemi
Package:
Bulk
Description:
TRANS PNP 300V 0.5A TO126-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The KSE350STU is a PNP epitaxial silicon transistor manufactured by onsemi (formerly Fairchild Semiconductor). This transistor is designed for a variety of applications requiring high voltage and current handling capabilities. It is packaged in a TO-126-3 case, making it suitable for through-hole mounting.

Key Specifications

ParameterSymbolRatingsUnits
Transistor Type-PNP-
Maximum DC Collector CurrentIc500 mAmA
Collector-Emitter Breakdown VoltageBVCEO300 VV
Collector-Base Breakdown VoltageBVCBO300 VV
Emitter-Base Breakdown VoltageBVEBO5 VV
Mounting Style-Through Hole-
Package / Case-TO-126-3-

Key Features

  • High voltage handling: Collector-Emitter and Collector-Base breakdown voltages of 300 V.
  • High current capability: Maximum DC collector current of 500 mA.
  • Suitable for through-hole mounting with a TO-126-3 package.
  • Pb-free and RoHS compliant, ensuring environmental sustainability.

Applications

  • Audio amplifiers and voltage amplifiers.
  • Current sources.
  • General-purpose amplifiers.
  • Other applications requiring high voltage and current handling.

Q & A

  1. What is the transistor type of the KSE350STU? The KSE350STU is a PNP epitaxial silicon transistor.
  2. What is the maximum DC collector current of the KSE350STU? The maximum DC collector current is 500 mA.
  3. What is the collector-emitter breakdown voltage of the KSE350STU? The collector-emitter breakdown voltage is 300 V.
  4. What is the package type of the KSE350STU? The KSE350STU is packaged in a TO-126-3 case.
  5. Is the KSE350STU Pb-free and RoHS compliant? Yes, the KSE350STU is Pb-free and RoHS compliant.
  6. What are some common applications of the KSE350STU? Common applications include audio amplifiers, voltage amplifiers, current sources, and general-purpose amplifiers.
  7. What is the emitter-base breakdown voltage of the KSE350STU? The emitter-base breakdown voltage is 5 V.
  8. How is the KSE350STU mounted? The KSE350STU is mounted through-hole.
  9. What is the collector-base breakdown voltage of the KSE350STU? The collector-base breakdown voltage is 300 V.
  10. Where can I find detailed specifications for the KSE350STU? Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser and Digi-Key.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):300 V
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 50mA, 10V
Power - Max:20 W
Frequency - Transition:- 
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-225AA, TO-126-3
Supplier Device Package:TO-126-3
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Same Series
KSE350S
KSE350S
TRANS PNP 300V 0.5A TO126-3

Similar Products

Part Number KSE350STU KSE340STU
Manufacturer onsemi onsemi
Product Status Active Obsolete
Transistor Type PNP NPN
Current - Collector (Ic) (Max) 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 300 V 300 V
Vce Saturation (Max) @ Ib, Ic - -
Current - Collector Cutoff (Max) 100µA (ICBO) 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 50mA, 10V 30 @ 50mA, 10V
Power - Max 20 W 20 W
Frequency - Transition - -
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-225AA, TO-126-3 TO-225AA, TO-126-3
Supplier Device Package TO-126-3 TO-126-3

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