ISL9R18120S3ST
  • Share:

onsemi ISL9R18120S3ST

Manufacturer No:
ISL9R18120S3ST
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 1200V 18A TO263AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The ISL9R18120S3ST is a STEALTH™ diode from onsemi, optimized for low loss performance in high frequency hard switched applications. This device is part of the STEALTH family, which is known for its low reverse recovery current (IRR) and exceptionally soft recovery characteristics. These features make it ideal for use as a free wheeling or boost diode in power supplies and other power switching applications. The STEALTH diode is designed to reduce losses in switching transistors and minimize ringing, allowing for operation without additional snubber circuitry. It is particularly recommended for use with SMPS IGBTs to achieve efficient and high power density designs at lower costs.

Key Specifications

ParameterSymbolRatingsUnit
Repetitive Peak Reverse VoltageVRRM1200V
Working Peak Reverse VoltageVRWM1200V
DC Blocking VoltageVR1200V
Average Rectified Forward Current (TC = 92°C)IF(AV)18A
Repetitive Peak Surge Current (20 kHz Square Wave)IFRM36A
Non-repetitive Peak Surge Current (Halfwave 1 Phase 60 Hz)IFSM200A
Power DissipationPD125W
Avalanche Energy (1 A, 40 mH)EAVL20mJ
Operating and Storage Temperature RangeTJ, TSTG-55 to +175°C
Maximum Temperature for SolderingTL300°C
Thermal Resistance Junction to CaseRθJC1.0°C/W
Thermal Resistance Junction to Ambient (TO-263)RθJA62°C/W
Instantaneous Forward Voltage (IF = 18 A, TC = 25°C)VF3.3V
Reverse Recovery Time (IF = 18 A, dIF/dt = 100 A/μs, VR = 30 V)trr300ns

Key Features

  • Stealth Recovery with trr = 300 ns (@ IF = 18 A)
  • Maximum Forward Voltage, VF = 3.3 V (@ TC = 25°C)
  • 1200 V Reverse Voltage and High Reliability
  • Avalanche Energy Rated
  • Pb-Free and RoHS Compliant
  • Low reverse recovery current (IRR) and exceptionally soft recovery
  • Reduces loss in switching transistors and minimizes ringing

Applications

  • Hard Switched PFC Boost Diode
  • UPS Free Wheeling Diode
  • Motor Drive FWD
  • SMPS FWD
  • Snubber Diode

Q & A

  1. What is the repetitive peak reverse voltage of the ISL9R18120S3ST? The repetitive peak reverse voltage is 1200 V.
  2. What is the average rectified forward current at 92°C? The average rectified forward current is 18 A.
  3. What is the maximum power dissipation? The maximum power dissipation is 125 W.
  4. What is the avalanche energy rating? The avalanche energy rating is 20 mJ.
  5. What are the operating and storage temperature ranges? The operating and storage temperature ranges are -55 to +175°C.
  6. What is the thermal resistance junction to case? The thermal resistance junction to case is 1.0 °C/W.
  7. What is the reverse recovery time at IF = 18 A and dIF/dt = 100 A/μs? The reverse recovery time is 300 ns.
  8. Is the ISL9R18120S3ST RoHS compliant? Yes, the ISL9R18120S3ST is Pb-Free and RoHS compliant.
  9. What are some typical applications of the ISL9R18120S3ST? Typical applications include hard switched PFC boost diode, UPS free wheeling diode, motor drive FWD, SMPS FWD, and snubber diode.
  10. How does the STEALTH diode reduce losses in switching transistors? The STEALTH diode reduces losses in switching transistors through its low reverse recovery current (IRR) and exceptionally soft recovery characteristics.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1200 V
Current - Average Rectified (Io):18A
Voltage - Forward (Vf) (Max) @ If:3.3 V @ 18 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):300 ns
Current - Reverse Leakage @ Vr:100 µA @ 1200 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:D²PAK (TO-263)
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

$1.71
41

Please send RFQ , we will respond immediately.

Same Series
ISL9R18120G2
ISL9R18120G2
RECTIFIER DIODE, 18A, 1200V, TO-
ISL9R18120P2
ISL9R18120P2
DIODE GEN PURP 1.2KV 18A TO220AC

Similar Products

Part Number ISL9R18120S3ST ISL9R8120S3ST
Manufacturer onsemi onsemi
Product Status Active Obsolete
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 1200 V 1200 V
Current - Average Rectified (Io) 18A 8A
Voltage - Forward (Vf) (Max) @ If 3.3 V @ 18 A 3.3 V @ 8 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 300 ns 300 ns
Current - Reverse Leakage @ Vr 100 µA @ 1200 V 100 µA @ 1200 V
Capacitance @ Vr, F - 30pF @ 10V, 1MHz
Mounting Type Surface Mount Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D²PAK (TO-263) D²PAK (TO-263)
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 150°C

Related Product By Categories

1N4007-E3/53
1N4007-E3/53
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 1A DO204AL
STPS1045D
STPS1045D
STMicroelectronics
DIODE SCHOTTKY 45V 10A TO220AC
STTH30L06G-TR
STTH30L06G-TR
STMicroelectronics
DIODE GEN PURP 600V 30A D2PAK
1N4937GP-E3/54
1N4937GP-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1A DO204AL
MBRS130
MBRS130
Fairchild Semiconductor
RECTIFIER, SCHOTTKY, 1A, 30V
STTH108
STTH108
STMicroelectronics
DIODE GEN PURP 800V 1A DO41
MURS260-M3/5BT
MURS260-M3/5BT
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 2A DO214AA
PMEG4020EP-QX
PMEG4020EP-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
FFSB10120A-F085
FFSB10120A-F085
onsemi
1200V 10A AUTO SIC SBD
BAT54-D87Z
BAT54-D87Z
onsemi
30V SOT23 SCHOTTKY DIODE
FSV530AF
FSV530AF
onsemi
DIODE SCHOTTKY 30V 5A SMAF
1N4937GHR1G
1N4937GHR1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL

Related Product By Brand

NZL7V5AXV3T1G
NZL7V5AXV3T1G
onsemi
TVS DIODE 5VWM 8.8VC SC89-3
MMSZ13T1G
MMSZ13T1G
onsemi
DIODE ZENER 13V 500MW SOD123
MJD3055T4G
MJD3055T4G
onsemi
TRANS NPN 60V 10A DPAK
2SA2222SG
2SA2222SG
onsemi
TRANS PNP 50V 10A TO220ML
2N7002KW
2N7002KW
onsemi
MOSFET N-CH 60V 310MA SC70
BMS3004-1EX
BMS3004-1EX
onsemi
MOSFET P-CH TO220-3
MC14050BDTEL
MC14050BDTEL
onsemi
BUFFER, 6-FUNC
MC33153DR2
MC33153DR2
onsemi
IC GATE DRVR LOW-SIDE 8SOIC
AMIS30521C5212G
AMIS30521C5212G
onsemi
IC MTRDRV BIPLR 4.75-5.25V 32QFP
NCV1117ST18T3G
NCV1117ST18T3G
onsemi
IC REG LINEAR 1.8V 1A SOT223
MC78M05BDTT5G
MC78M05BDTT5G
onsemi
IC REG LINEAR 5V 500MA DPAK
MC7808BTG
MC7808BTG
onsemi
IC REG LINEAR 8V 1A TO220AB