ISL9R18120S3ST
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onsemi ISL9R18120S3ST

Manufacturer No:
ISL9R18120S3ST
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 1200V 18A TO263AB
Delivery:
Payment:
iso14001
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Product Introduction

Overview

The ISL9R18120S3ST is a STEALTH™ diode from onsemi, optimized for low loss performance in high frequency hard switched applications. This device is part of the STEALTH family, which is known for its low reverse recovery current (IRR) and exceptionally soft recovery characteristics. These features make it ideal for use as a free wheeling or boost diode in power supplies and other power switching applications. The STEALTH diode is designed to reduce losses in switching transistors and minimize ringing, allowing for operation without additional snubber circuitry. It is particularly recommended for use with SMPS IGBTs to achieve efficient and high power density designs at lower costs.

Key Specifications

ParameterSymbolRatingsUnit
Repetitive Peak Reverse VoltageVRRM1200V
Working Peak Reverse VoltageVRWM1200V
DC Blocking VoltageVR1200V
Average Rectified Forward Current (TC = 92°C)IF(AV)18A
Repetitive Peak Surge Current (20 kHz Square Wave)IFRM36A
Non-repetitive Peak Surge Current (Halfwave 1 Phase 60 Hz)IFSM200A
Power DissipationPD125W
Avalanche Energy (1 A, 40 mH)EAVL20mJ
Operating and Storage Temperature RangeTJ, TSTG-55 to +175°C
Maximum Temperature for SolderingTL300°C
Thermal Resistance Junction to CaseRθJC1.0°C/W
Thermal Resistance Junction to Ambient (TO-263)RθJA62°C/W
Instantaneous Forward Voltage (IF = 18 A, TC = 25°C)VF3.3V
Reverse Recovery Time (IF = 18 A, dIF/dt = 100 A/μs, VR = 30 V)trr300ns

Key Features

  • Stealth Recovery with trr = 300 ns (@ IF = 18 A)
  • Maximum Forward Voltage, VF = 3.3 V (@ TC = 25°C)
  • 1200 V Reverse Voltage and High Reliability
  • Avalanche Energy Rated
  • Pb-Free and RoHS Compliant
  • Low reverse recovery current (IRR) and exceptionally soft recovery
  • Reduces loss in switching transistors and minimizes ringing

Applications

  • Hard Switched PFC Boost Diode
  • UPS Free Wheeling Diode
  • Motor Drive FWD
  • SMPS FWD
  • Snubber Diode

Q & A

  1. What is the repetitive peak reverse voltage of the ISL9R18120S3ST? The repetitive peak reverse voltage is 1200 V.
  2. What is the average rectified forward current at 92°C? The average rectified forward current is 18 A.
  3. What is the maximum power dissipation? The maximum power dissipation is 125 W.
  4. What is the avalanche energy rating? The avalanche energy rating is 20 mJ.
  5. What are the operating and storage temperature ranges? The operating and storage temperature ranges are -55 to +175°C.
  6. What is the thermal resistance junction to case? The thermal resistance junction to case is 1.0 °C/W.
  7. What is the reverse recovery time at IF = 18 A and dIF/dt = 100 A/μs? The reverse recovery time is 300 ns.
  8. Is the ISL9R18120S3ST RoHS compliant? Yes, the ISL9R18120S3ST is Pb-Free and RoHS compliant.
  9. What are some typical applications of the ISL9R18120S3ST? Typical applications include hard switched PFC boost diode, UPS free wheeling diode, motor drive FWD, SMPS FWD, and snubber diode.
  10. How does the STEALTH diode reduce losses in switching transistors? The STEALTH diode reduces losses in switching transistors through its low reverse recovery current (IRR) and exceptionally soft recovery characteristics.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1200 V
Current - Average Rectified (Io):18A
Voltage - Forward (Vf) (Max) @ If:3.3 V @ 18 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):300 ns
Current - Reverse Leakage @ Vr:100 µA @ 1200 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:D²PAK (TO-263)
Operating Temperature - Junction:-55°C ~ 175°C
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Similar Products

Part Number ISL9R18120S3ST ISL9R8120S3ST
Manufacturer onsemi onsemi
Product Status Active Obsolete
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 1200 V 1200 V
Current - Average Rectified (Io) 18A 8A
Voltage - Forward (Vf) (Max) @ If 3.3 V @ 18 A 3.3 V @ 8 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 300 ns 300 ns
Current - Reverse Leakage @ Vr 100 µA @ 1200 V 100 µA @ 1200 V
Capacitance @ Vr, F - 30pF @ 10V, 1MHz
Mounting Type Surface Mount Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D²PAK (TO-263) D²PAK (TO-263)
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 150°C

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