Overview
The FJV42MTF is an NPN high-voltage transistor produced by onsemi. This transistor is designed for low-power surface mount applications and is housed in the SOT-23 (TO-236) package. It is suitable for general-purpose amplifier applications due to its robust electrical characteristics and compact design.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (VCEO) | 350 | V |
| Collector-Base Voltage (VCB0) | 350 | V |
| Emitter-Base Voltage (VEB0) | 6 | V |
| Collector Current (IC) | 500 | mA |
| Storage Temperature Range (TSTG) | −55 to +150 | °C |
| Power Dissipation (PD) | 350 | mW |
| Thermal Resistance, Junction-to-Ambient (RθJA) | 357 | °C/W |
| DC Current Gain (hFE) at IC = 1.0 mA, VCE = 10 V | 25 | |
| Collector-Emitter Saturation Voltage (VCE(sat)) at IC = 20 mA, IB = 2.0 mA | 0.5 | V |
| Base-Emitter Saturation Voltage (VBE(sat)) at IC = 20 mA, IB = 2.0 mA | 0.9 | V |
| Current Gain-Bandwidth Product (fT) at IC = 10 mA, VCE = 20 V, f = 100 MHz | 50 | MHz |
Key Features
- High collector-emitter voltage of 350 V, making it suitable for high-voltage applications.
- Compact SOT-23 (TO-236) package, ideal for surface mount applications.
- Low power dissipation of 350 mW, reducing thermal management requirements.
- High DC current gain (hFE) with values ranging from 25 to 40, depending on the collector current.
- Low collector-emitter and base-emitter saturation voltages, enhancing efficiency in amplifier circuits.
- High current gain-bandwidth product of 50 MHz, suitable for high-frequency applications.
Applications
- General-purpose amplifier circuits.
- High-voltage switching applications.
- Audio amplifiers and other low-power audio equipment.
- Automotive and industrial control systems requiring high reliability and durability.
- Other surface mount applications where compact size and high performance are critical.
Q & A
- What is the maximum collector-emitter voltage of the FJV42MTF transistor?
The maximum collector-emitter voltage (VCEO) is 350 V.
- What is the package type of the FJV42MTF transistor?
The FJV42MTF is housed in the SOT-23 (TO-236) package.
- What is the maximum collector current of the FJV42MTF transistor?
The maximum collector current (IC) is 500 mA.
- What is the typical DC current gain (hFE) of the FJV42MTF transistor?
The typical DC current gain (hFE) ranges from 25 to 40, depending on the collector current.
- What is the power dissipation of the FJV42MTF transistor?
The power dissipation (PD) is 350 mW.
- What is the thermal resistance, junction-to-ambient (RθJA) of the FJV42MTF transistor?
The thermal resistance, junction-to-ambient (RθJA) is 357 °C/W.
- What is the current gain-bandwidth product (fT) of the FJV42MTF transistor?
The current gain-bandwidth product (fT) is 50 MHz.
- What are the typical applications of the FJV42MTF transistor?
The FJV42MTF is typically used in general-purpose amplifier circuits, high-voltage switching applications, audio amplifiers, and other surface mount applications.
- Is the FJV42MTF transistor suitable for high-frequency applications?
Yes, the FJV42MTF transistor is suitable for high-frequency applications due to its high current gain-bandwidth product.
- What is the storage temperature range of the FJV42MTF transistor?
The storage temperature range (TSTG) is −55 to +150 °C.
