Overview
The FFSH3065ADN-F155 is a Silicon Carbide (SiC) Schottky Diode produced by onsemi. This diode utilizes advanced SiC technology to offer superior switching performance and higher reliability compared to traditional silicon-based diodes. It is designed for high-power applications where efficiency, speed, and durability are critical.
Key Specifications
| Parameter | Value |
|---|---|
| Current Rating | 30 A |
| Voltage Rating | 650 V |
| Package Type | TO-247-3L |
| Forward Voltage Drop (Vf) | |
| Reverse Leakage Current (Ir) | |
| Junction Temperature Range | -55°C to 175°C |
| Storage Temperature Range | -55°C to 150°C |
Key Features
- High current rating of 30 A and high voltage rating of 650 V, making it suitable for high-power applications.
- Low forward voltage drop (Vf) of typically 1.35 V at 30 A, enhancing efficiency.
- Low reverse leakage current (Ir) of typically 10 μA at 650 V, reducing power loss.
- Wide junction temperature range from -55°C to 175°C, ensuring reliability in various operating conditions.
- Fast switching times due to the inherent properties of Silicon Carbide technology.
Applications
- Power supplies and DC-DC converters requiring high efficiency and reliability.
- Electric vehicles and hybrid electric vehicles for battery charging and discharging systems.
- Renewable energy systems such as solar and wind power inverters.
- Industrial power systems, including motor drives and power factor correction (PFC) circuits.
- Aerospace and defense applications where high reliability and performance are critical.
Q & A
- What is the current rating of the FFSH3065ADN-F155? The current rating is 30 A.
- What is the voltage rating of the FFSH3065ADN-F155? The voltage rating is 650 V.
- What package type does the FFSH3065ADN-F155 use? It uses the TO-247-3L package type.
- What is the typical forward voltage drop (Vf) of the FFSH3065ADN-F155? The typical forward voltage drop is 1.35 V at 30 A.
- What is the typical reverse leakage current (Ir) of the FFSH3065ADN-F155? The typical reverse leakage current is 10 μA at 650 V.
- What is the junction temperature range of the FFSH3065ADN-F155? The junction temperature range is from -55°C to 175°C.
- What are some common applications of the FFSH3065ADN-F155? Common applications include power supplies, electric vehicles, renewable energy systems, industrial power systems, and aerospace and defense applications.
- Why is Silicon Carbide (SiC) technology used in the FFSH3065ADN-F155? SiC technology is used for its superior switching performance, higher reliability, and lower power loss compared to traditional silicon-based diodes.
- Where can I find detailed specifications for the FFSH3065ADN-F155? Detailed specifications can be found in the datasheet available on onsemi’s official website and other electronic component distributors like Mouser and Digi-Key.
- Is the FFSH3065ADN-F155 suitable for high-frequency applications? Yes, the FFSH3065ADN-F155 is suitable for high-frequency applications due to its fast switching times and low forward voltage drop.
