FFSB10120A
  • Share:

onsemi FFSB10120A

Manufacturer No:
FFSB10120A
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE SBD 10A 120V D2PAK-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FFSB10120A is a Silicon Carbide (SiC) Schottky Diode produced by ON Semiconductor. This device leverages the latest technology in power semiconductors, offering superior switching performance and higher reliability compared to traditional silicon-based diodes. Key benefits include no reverse recovery current, temperature-independent switching characteristics, and excellent thermal performance. These features make the FFSB10120A ideal for applications requiring high efficiency, faster operating frequencies, increased power density, reduced EMI, and reduced system size and cost.

Key Specifications

Parameter Value Unit
Peak Repetitive Reverse Voltage (VRRM) 1200 V
Single Pulse Avalanche Energy (EAS) 100 mJ
Continuous Rectified Forward Current @ TC < 164°C (IF) 10 A
Continuous Rectified Forward Current @ TC < 135°C (IF) 21 A
Non-Repetitive Peak Forward Surge Current @ TC = 25°C, 10 μs (IF, Max) 850 A
Non-Repetitive Forward Surge Current @ Half-Sine Pulse, tp = 8.3 ms (IF,SM) 90 A
Repetitive Forward Surge Current @ Half-Sine Pulse, tp = 8.3 ms (IF,RM) 35 A
Power Dissipation @ TC = 25°C (Ptot) 283 W
Power Dissipation @ TC = 150°C (Ptot) 47 W
Operating and Storage Temperature Range (TJ, TSTG) −55 to +175 °C
Forward Voltage (Vf) 1.45 V
Reverse Current (Ir) 200 μA

Key Features

  • Max Junction Temperature: 175°C
  • Avalanche Rated: 100 mJ
  • High Surge Current Capacity
  • Positive Temperature Coefficient
  • Ease of Paralleling
  • No Reverse Recovery / No Forward Recovery
  • Pb−Free, Halogen Free/BFR Free and RoHS Compliant

Applications

  • General Purpose
  • SMPS, Solar Inverter, UPS
  • Power Switching Circuits
  • Automotive HEV/EV Onboard Chargers
  • Automotive HEV/EV DC-DC Converters

Q & A

  1. What is the peak repetitive reverse voltage of the FFSB10120A?

    The peak repetitive reverse voltage (VRRM) is 1200 V.

  2. What is the maximum junction temperature for the FFSB10120A?

    The maximum junction temperature is 175°C.

  3. Does the FFSB10120A have reverse recovery current?

    No, the FFSB10120A does not have reverse recovery current.

  4. What is the continuous rectified forward current at TC < 164°C?

    The continuous rectified forward current at TC < 164°C is 10 A.

  5. Is the FFSB10120A RoHS compliant?
  6. What are the typical applications of the FFSB10120A?

    The FFSB10120A is typically used in SMPS, Solar Inverters, UPS, Power Switching Circuits, and automotive HEV/EV systems.

  7. What is the non-repetitive peak forward surge current at TC = 25°C, 10 μs?

    The non-repetitive peak forward surge current at TC = 25°C, 10 μs is 850 A.

  8. What is the power dissipation at TC = 25°C?

    The power dissipation at TC = 25°C is 283 W.

  9. What is the operating and storage temperature range for the FFSB10120A?

    The operating and storage temperature range is −55 to +175°C.

  10. What is the forward voltage (Vf) of the FFSB10120A?

    The forward voltage (Vf) is 1.45 V.

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):1200 V
Current - Average Rectified (Io):21A (DC)
Voltage - Forward (Vf) (Max) @ If:1.75 V @ 10 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:200 µA @ 1200 V
Capacitance @ Vr, F:612pF @ 1V, 100kHz
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:D²PAK-3 (TO-263-3)
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

$4.44
41

Please send RFQ , we will respond immediately.

Same Series
DD15S20JVL0/AA
DD15S20JVL0/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD62M3200T20/AA
DD62M3200T20/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD15S20LT2S/AA
DD15S20LT2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LV5S
DD15S20LV5S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20Z0X
DD15S20Z0X
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M20HE20/AA
DD26M20HE20/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26S2S0T0
DD26S2S0T0
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S10HT20/AA
DD26S10HT20/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD15S20Z0S/AA
DD15S20Z0S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC46W4S1000S
CBC46W4S1000S
CONN D-SUB RCPT 46POS CRIMP
DD26S20WE30
DD26S20WE30
CONN D-SUB HD RCPT 26P SLDR CUP
CBC47W1S1S50V5S
CBC47W1S1S50V5S
CONN D-SUB RCPT 47POS CRIMP

Similar Products

Part Number FFSB10120A FFSP10120A FFSD10120A FFSH10120A FFSB20120A
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 1200 V 1200 V 1200 V 1200 V 1200 V
Current - Average Rectified (Io) 21A (DC) 10A (DC) - 17A (DC) 32A (DC)
Voltage - Forward (Vf) (Max) @ If 1.75 V @ 10 A 1.75 V @ 10 A 1.75 V @ 10 A 1.75 V @ 10 A 1.75 V @ 20 A
Speed No Recovery Time > 500mA (Io) Fast Recovery =< 500ns, > 200mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 0 ns - 0 ns 0 ns -
Current - Reverse Leakage @ Vr 200 µA @ 1200 V 200 µA @ 1200 V 200 µA @ 1200 V 200 µA @ 1200 V 200 µA @ 1200 V
Capacitance @ Vr, F 612pF @ 1V, 100kHz 612pF @ 1V, 100kHz 612pF @ 1V, 100kHz 612pF @ 1V, 100kHz 1220pF @ 1V, 100KHz
Mounting Type Surface Mount Through Hole Surface Mount Through Hole Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-2 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-247-2 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D²PAK-3 (TO-263-3) TO-220-2L TO-252AA TO-247-2 D²PAK-3 (TO-263-3)
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C - -55°C ~ 175°C -55°C ~ 175°C

Related Product By Categories

STPS1150AY
STPS1150AY
STMicroelectronics
DIODE SCHOTTKY 150V 1A SMA
BAS521-7
BAS521-7
Diodes Incorporated
DIODE GEN PURP 300V 250MA SOD523
MBRS140T3G
MBRS140T3G
onsemi
DIODE SCHOTTKY 40V 1A SMB
S110FA
S110FA
onsemi
DIODE SCHOTTKY 100V 1A SOD123FA
MUR1520G
MUR1520G
onsemi
DIODE GEN PURP 200V 15A TO220-2
BAT42W-E3-18
BAT42W-E3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
1N4004GH
1N4004GH
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO204AL
BAT43W-HE3-18
BAT43W-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
STPS2H100AFN
STPS2H100AFN
STMicroelectronics
100 V, 2 A POWER SCHOTTKY RECTIF
1N4007G L
1N4007G L
MDD
GENERAL DIODE 1KV 1A DO-41
MUR260RL
MUR260RL
onsemi
DIODE GEN PURP 600V 2A AXIAL
BAT43 A0
BAT43 A0
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35

Related Product By Brand

2N6284G
2N6284G
onsemi
TRANS NPN DARL 100V 20A TO204
FDS4465-G
FDS4465-G
onsemi
MOSFET P-CH 20V 8SOIC
NLHV4052DTR2G
NLHV4052DTR2G
onsemi
IC MULTIPLEXER DP4T 16TSSOP
NCV2820MUTBG
NCV2820MUTBG
onsemi
IC AMP CLASS D MONO 8UDFN
MC74AC273DWR2G
MC74AC273DWR2G
onsemi
IC FF D-TYPE SNGL 8BIT 20SOIC
NL27WZ08USG
NL27WZ08USG
onsemi
IC GATE AND 2CH 2-INP US8
NCV7720DQR2G
NCV7720DQR2G
onsemi
IC MOTOR DRVR 3.15V-5.25V 24SSOP
REF3033TB-GT3
REF3033TB-GT3
onsemi
IC VREF SERIES 0.2% SOT23-3
NCP705MTADJTCG
NCP705MTADJTCG
onsemi
IC REG LIN POS ADJ 500MA 6WDFN
LM2903DR2GH
LM2903DR2GH
onsemi
FIXED POSITIVE LDO REGULATOR
MC33269DTRK-3.3
MC33269DTRK-3.3
onsemi
IC REG LDO 0.8A 3.3V DPAK
CS8190ENF16G
CS8190ENF16G
onsemi
IC DRIVER 16DIP