FFSB10120A
  • Share:

onsemi FFSB10120A

Manufacturer No:
FFSB10120A
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE SBD 10A 120V D2PAK-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FFSB10120A is a Silicon Carbide (SiC) Schottky Diode produced by ON Semiconductor. This device leverages the latest technology in power semiconductors, offering superior switching performance and higher reliability compared to traditional silicon-based diodes. Key benefits include no reverse recovery current, temperature-independent switching characteristics, and excellent thermal performance. These features make the FFSB10120A ideal for applications requiring high efficiency, faster operating frequencies, increased power density, reduced EMI, and reduced system size and cost.

Key Specifications

Parameter Value Unit
Peak Repetitive Reverse Voltage (VRRM) 1200 V
Single Pulse Avalanche Energy (EAS) 100 mJ
Continuous Rectified Forward Current @ TC < 164°C (IF) 10 A
Continuous Rectified Forward Current @ TC < 135°C (IF) 21 A
Non-Repetitive Peak Forward Surge Current @ TC = 25°C, 10 μs (IF, Max) 850 A
Non-Repetitive Forward Surge Current @ Half-Sine Pulse, tp = 8.3 ms (IF,SM) 90 A
Repetitive Forward Surge Current @ Half-Sine Pulse, tp = 8.3 ms (IF,RM) 35 A
Power Dissipation @ TC = 25°C (Ptot) 283 W
Power Dissipation @ TC = 150°C (Ptot) 47 W
Operating and Storage Temperature Range (TJ, TSTG) −55 to +175 °C
Forward Voltage (Vf) 1.45 V
Reverse Current (Ir) 200 μA

Key Features

  • Max Junction Temperature: 175°C
  • Avalanche Rated: 100 mJ
  • High Surge Current Capacity
  • Positive Temperature Coefficient
  • Ease of Paralleling
  • No Reverse Recovery / No Forward Recovery
  • Pb−Free, Halogen Free/BFR Free and RoHS Compliant

Applications

  • General Purpose
  • SMPS, Solar Inverter, UPS
  • Power Switching Circuits
  • Automotive HEV/EV Onboard Chargers
  • Automotive HEV/EV DC-DC Converters

Q & A

  1. What is the peak repetitive reverse voltage of the FFSB10120A?

    The peak repetitive reverse voltage (VRRM) is 1200 V.

  2. What is the maximum junction temperature for the FFSB10120A?

    The maximum junction temperature is 175°C.

  3. Does the FFSB10120A have reverse recovery current?

    No, the FFSB10120A does not have reverse recovery current.

  4. What is the continuous rectified forward current at TC < 164°C?

    The continuous rectified forward current at TC < 164°C is 10 A.

  5. Is the FFSB10120A RoHS compliant?
  6. What are the typical applications of the FFSB10120A?

    The FFSB10120A is typically used in SMPS, Solar Inverters, UPS, Power Switching Circuits, and automotive HEV/EV systems.

  7. What is the non-repetitive peak forward surge current at TC = 25°C, 10 μs?

    The non-repetitive peak forward surge current at TC = 25°C, 10 μs is 850 A.

  8. What is the power dissipation at TC = 25°C?

    The power dissipation at TC = 25°C is 283 W.

  9. What is the operating and storage temperature range for the FFSB10120A?

    The operating and storage temperature range is −55 to +175°C.

  10. What is the forward voltage (Vf) of the FFSB10120A?

    The forward voltage (Vf) is 1.45 V.

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):1200 V
Current - Average Rectified (Io):21A (DC)
Voltage - Forward (Vf) (Max) @ If:1.75 V @ 10 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:200 µA @ 1200 V
Capacitance @ Vr, F:612pF @ 1V, 100kHz
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:D²PAK-3 (TO-263-3)
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

$4.44
41

Please send RFQ , we will respond immediately.

Same Series
DD15S2S5WV5X/AA
DD15S2S5WV5X/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S2S5WV50/AA
DD15S2S5WV50/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LV5S
DD15S20LV5S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20Z0X/AA
DD15S20Z0X/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LVLS/AA
DD15S20LVLS/AA
CONN D-SUB HD RCPT 15P SLDR CUP
PCD50M98S0T2X
PCD50M98S0T2X
DSUB 50M STR CONTACT J/S TIN
DD15S20WE2S/AA
DD15S20WE2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M20HT20/AA
DD26M20HT20/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26S200V3X
DD26S200V3X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50TX/AA
DD26S2S50TX/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S3200TX
DD44S3200TX
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WE30/AA
DD26S20WE30/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number FFSB10120A FFSP10120A FFSD10120A FFSH10120A FFSB20120A
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 1200 V 1200 V 1200 V 1200 V 1200 V
Current - Average Rectified (Io) 21A (DC) 10A (DC) - 17A (DC) 32A (DC)
Voltage - Forward (Vf) (Max) @ If 1.75 V @ 10 A 1.75 V @ 10 A 1.75 V @ 10 A 1.75 V @ 10 A 1.75 V @ 20 A
Speed No Recovery Time > 500mA (Io) Fast Recovery =< 500ns, > 200mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 0 ns - 0 ns 0 ns -
Current - Reverse Leakage @ Vr 200 µA @ 1200 V 200 µA @ 1200 V 200 µA @ 1200 V 200 µA @ 1200 V 200 µA @ 1200 V
Capacitance @ Vr, F 612pF @ 1V, 100kHz 612pF @ 1V, 100kHz 612pF @ 1V, 100kHz 612pF @ 1V, 100kHz 1220pF @ 1V, 100KHz
Mounting Type Surface Mount Through Hole Surface Mount Through Hole Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-2 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-247-2 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D²PAK-3 (TO-263-3) TO-220-2L TO-252AA TO-247-2 D²PAK-3 (TO-263-3)
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C - -55°C ~ 175°C -55°C ~ 175°C

Related Product By Categories

BAT46WH,115
BAT46WH,115
Nexperia USA Inc.
DIODE SCHOT 100V 250MA SOD123F
STPSC406B-TR
STPSC406B-TR
STMicroelectronics
DIODE SCHOTTKY 600V 4A DPAK
BAS521-7
BAS521-7
Diodes Incorporated
DIODE GEN PURP 300V 250MA SOD523
FFSH15120A
FFSH15120A
onsemi
1200V 15A SIC SBD
MURS110T3G
MURS110T3G
onsemi
DIODE GEN PURP 100V 1A SMB
MUR160A
MUR160A
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
BAT54-D87Z
BAT54-D87Z
onsemi
30V SOT23 SCHOTTKY DIODE
BAS16_L99Z
BAS16_L99Z
onsemi
DIODE GEN PURP 85V 200MA SOT23-3
BAT43 A0G
BAT43 A0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA DO35
1N5821HA0G
1N5821HA0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 3A DO201AD
MUR420S R6
MUR420S R6
Taiwan Semiconductor Corporation
DIODE GEN PURP 3A DO214AB
BAT54T-HF
BAT54T-HF
Comchip Technology
DIODE SCHOTTKY 30V 0.2A SOT-23

Related Product By Brand

MMBD7000LT1G
MMBD7000LT1G
onsemi
DIODE ARRAY GP 100V 200MA SOT23
FFSH3065A
FFSH3065A
onsemi
650V 30A SIC SBD
NSS60600MZ4T3G
NSS60600MZ4T3G
onsemi
TRANS PNP 60V 6A SOT223
NB3U1548CDR2G
NB3U1548CDR2G
onsemi
IC CLK BUFFER 160MHZ 8SOIC
MC74HCT125ADR2G
MC74HCT125ADR2G
onsemi
IC BUFFER NON-INVERT 6V 14SOIC
MC74AC273DWR2G
MC74AC273DWR2G
onsemi
IC FF D-TYPE SNGL 8BIT 20SOIC
MC33364D1
MC33364D1
onsemi
IC OFFLINE SWITCH FLYBACK 8SOIC
FAN3224TMX-F085
FAN3224TMX-F085
onsemi
IC GATE DRVR LOW-SIDE 8SOIC
AMIS30622C6227G
AMIS30622C6227G
onsemi
IC MTR DRV BIPOLR 6.5-29V 20SOIC
NCP1566MNTXG
NCP1566MNTXG
onsemi
IC PWM CTLR ACT CLAMP 24QFN
NCP584HSN33T1G
NCP584HSN33T1G
onsemi
IC REG LINEAR 3.3V 200MA SOT23-5
FOD817A3SD
FOD817A3SD
onsemi
OPTOISOLATOR 5KV TRANSISTOR 4SMD