FFSB10120A
  • Share:

onsemi FFSB10120A

Manufacturer No:
FFSB10120A
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE SBD 10A 120V D2PAK-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FFSB10120A is a Silicon Carbide (SiC) Schottky Diode produced by ON Semiconductor. This device leverages the latest technology in power semiconductors, offering superior switching performance and higher reliability compared to traditional silicon-based diodes. Key benefits include no reverse recovery current, temperature-independent switching characteristics, and excellent thermal performance. These features make the FFSB10120A ideal for applications requiring high efficiency, faster operating frequencies, increased power density, reduced EMI, and reduced system size and cost.

Key Specifications

Parameter Value Unit
Peak Repetitive Reverse Voltage (VRRM) 1200 V
Single Pulse Avalanche Energy (EAS) 100 mJ
Continuous Rectified Forward Current @ TC < 164°C (IF) 10 A
Continuous Rectified Forward Current @ TC < 135°C (IF) 21 A
Non-Repetitive Peak Forward Surge Current @ TC = 25°C, 10 μs (IF, Max) 850 A
Non-Repetitive Forward Surge Current @ Half-Sine Pulse, tp = 8.3 ms (IF,SM) 90 A
Repetitive Forward Surge Current @ Half-Sine Pulse, tp = 8.3 ms (IF,RM) 35 A
Power Dissipation @ TC = 25°C (Ptot) 283 W
Power Dissipation @ TC = 150°C (Ptot) 47 W
Operating and Storage Temperature Range (TJ, TSTG) −55 to +175 °C
Forward Voltage (Vf) 1.45 V
Reverse Current (Ir) 200 μA

Key Features

  • Max Junction Temperature: 175°C
  • Avalanche Rated: 100 mJ
  • High Surge Current Capacity
  • Positive Temperature Coefficient
  • Ease of Paralleling
  • No Reverse Recovery / No Forward Recovery
  • Pb−Free, Halogen Free/BFR Free and RoHS Compliant

Applications

  • General Purpose
  • SMPS, Solar Inverter, UPS
  • Power Switching Circuits
  • Automotive HEV/EV Onboard Chargers
  • Automotive HEV/EV DC-DC Converters

Q & A

  1. What is the peak repetitive reverse voltage of the FFSB10120A?

    The peak repetitive reverse voltage (VRRM) is 1200 V.

  2. What is the maximum junction temperature for the FFSB10120A?

    The maximum junction temperature is 175°C.

  3. Does the FFSB10120A have reverse recovery current?

    No, the FFSB10120A does not have reverse recovery current.

  4. What is the continuous rectified forward current at TC < 164°C?

    The continuous rectified forward current at TC < 164°C is 10 A.

  5. Is the FFSB10120A RoHS compliant?
  6. What are the typical applications of the FFSB10120A?

    The FFSB10120A is typically used in SMPS, Solar Inverters, UPS, Power Switching Circuits, and automotive HEV/EV systems.

  7. What is the non-repetitive peak forward surge current at TC = 25°C, 10 μs?

    The non-repetitive peak forward surge current at TC = 25°C, 10 μs is 850 A.

  8. What is the power dissipation at TC = 25°C?

    The power dissipation at TC = 25°C is 283 W.

  9. What is the operating and storage temperature range for the FFSB10120A?

    The operating and storage temperature range is −55 to +175°C.

  10. What is the forward voltage (Vf) of the FFSB10120A?

    The forward voltage (Vf) is 1.45 V.

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):1200 V
Current - Average Rectified (Io):21A (DC)
Voltage - Forward (Vf) (Max) @ If:1.75 V @ 10 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:200 µA @ 1200 V
Capacitance @ Vr, F:612pF @ 1V, 100kHz
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:D²PAK-3 (TO-263-3)
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

$4.44
41

Please send RFQ , we will respond immediately.

Same Series
DD26M20JV5Z
DD26M20JV5Z
CONN D-SUB HD PLUG 26P SLDR CUP
DD15S20LV3S
DD15S20LV3S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20Z00
DD15S20Z00
CONN D-SUB HD RCPT 15P SLDR CUP
DD44S32S60T20
DD44S32S60T20
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S0TS/AA
DD44S32S0TS/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S2S50T0/AA
DD26S2S50T0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2F00X
DD26S2F00X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50T0
DD26S2S50T0
CONN D-SUB HD RCPT 26P SLDR CUP
DD62M32S0V3S/AA
DD62M32S0V3S/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD44S3200T0
DD44S3200T0
CONN D-SUB HD RCPT 44P VERT SLDR
CBC17W2S10HT2S/AA
CBC17W2S10HT2S/AA
CONN D-SUB RCPT 17POS CRIMP
DD26S20WTX
DD26S20WTX
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number FFSB10120A FFSP10120A FFSD10120A FFSH10120A FFSB20120A
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 1200 V 1200 V 1200 V 1200 V 1200 V
Current - Average Rectified (Io) 21A (DC) 10A (DC) - 17A (DC) 32A (DC)
Voltage - Forward (Vf) (Max) @ If 1.75 V @ 10 A 1.75 V @ 10 A 1.75 V @ 10 A 1.75 V @ 10 A 1.75 V @ 20 A
Speed No Recovery Time > 500mA (Io) Fast Recovery =< 500ns, > 200mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 0 ns - 0 ns 0 ns -
Current - Reverse Leakage @ Vr 200 µA @ 1200 V 200 µA @ 1200 V 200 µA @ 1200 V 200 µA @ 1200 V 200 µA @ 1200 V
Capacitance @ Vr, F 612pF @ 1V, 100kHz 612pF @ 1V, 100kHz 612pF @ 1V, 100kHz 612pF @ 1V, 100kHz 1220pF @ 1V, 100KHz
Mounting Type Surface Mount Through Hole Surface Mount Through Hole Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-2 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-247-2 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D²PAK-3 (TO-263-3) TO-220-2L TO-252AA TO-247-2 D²PAK-3 (TO-263-3)
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C - -55°C ~ 175°C -55°C ~ 175°C

Related Product By Categories

MUR460M_AY_00001
MUR460M_AY_00001
Panjit International Inc.
SUPERFAST RECOVERY RECTIFIERS
RB751S40T1G
RB751S40T1G
onsemi
DIODE SCHOTTKY 30V 30MA SOD523
FFSH15120A
FFSH15120A
onsemi
1200V 15A SIC SBD
SBAT54XV2T1G
SBAT54XV2T1G
onsemi
DIODE SCHOTTKY 30V 200MA SOD523
BAS16WS-G3-08
BAS16WS-G3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 250MA SOD323
MUR460-T
MUR460-T
Diodes Incorporated
FRED GPP RECTIFIER DO-201AD T&R
BAS21_D87Z
BAS21_D87Z
onsemi
DIODE GEN PURP 250V 200MA SOT23
BAS16_S00Z
BAS16_S00Z
onsemi
DIODE GEN PURP 85V 200MA SOT23-3
STPS8L30B
STPS8L30B
STMicroelectronics
DIODE SCHOTTKY 30V 8A DPAK
MUR240
MUR240
onsemi
DIODE GEN PURP 400V 2A AXIAL
MUR160GP-AP
MUR160GP-AP
Micro Commercial Co
DIODE GPP SUPER FAST 1A DO-41
BAS321-QX
BAS321-QX
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP

Related Product By Brand

BAV70-ON
BAV70-ON
onsemi
RECTIFIER DIODE, 2 ELEMENT, 0.2A
SZBZX84C12LT1G
SZBZX84C12LT1G
onsemi
DIODE ZENER 12V 250MW SOT23-3
SZMMSZ4V7T1G
SZMMSZ4V7T1G
onsemi
DIODE ZENER 4.7V 500MW SOD123
2SC3646S-TD-E
2SC3646S-TD-E
onsemi
TRANS NPN 100V 1A PCP
TIP145G
TIP145G
onsemi
TRANS PNP DARL 60V 10A TO247-3
DTC114TM3T5G
DTC114TM3T5G
onsemi
TRANS PREBIAS NPN 50V SOT723
NVHL025N65S3
NVHL025N65S3
onsemi
MOSFET N-CH 650V 75A TO247-3
MC33072DR2G
MC33072DR2G
onsemi
IC OPAMP JFET 2 CIRCUIT 8SOIC
NL17SZ04XV5T2G
NL17SZ04XV5T2G
onsemi
IC INVERTER 1CH 1-INP SOT553
NLSV2T244DR2G
NLSV2T244DR2G
onsemi
IC TRNSLTR UNIDIRECTIONAL 8SOIC
LB1936V-TLM-E
LB1936V-TLM-E
onsemi
IC MTR DRV BIPLR 2.5-9.5V 16SSOP
MC79L15ABPG
MC79L15ABPG
onsemi
IC REG LINEAR -15V 100MA TO92-3