FFSB10120A
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onsemi FFSB10120A

Manufacturer No:
FFSB10120A
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE SBD 10A 120V D2PAK-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FFSB10120A is a Silicon Carbide (SiC) Schottky Diode produced by ON Semiconductor. This device leverages the latest technology in power semiconductors, offering superior switching performance and higher reliability compared to traditional silicon-based diodes. Key benefits include no reverse recovery current, temperature-independent switching characteristics, and excellent thermal performance. These features make the FFSB10120A ideal for applications requiring high efficiency, faster operating frequencies, increased power density, reduced EMI, and reduced system size and cost.

Key Specifications

Parameter Value Unit
Peak Repetitive Reverse Voltage (VRRM) 1200 V
Single Pulse Avalanche Energy (EAS) 100 mJ
Continuous Rectified Forward Current @ TC < 164°C (IF) 10 A
Continuous Rectified Forward Current @ TC < 135°C (IF) 21 A
Non-Repetitive Peak Forward Surge Current @ TC = 25°C, 10 μs (IF, Max) 850 A
Non-Repetitive Forward Surge Current @ Half-Sine Pulse, tp = 8.3 ms (IF,SM) 90 A
Repetitive Forward Surge Current @ Half-Sine Pulse, tp = 8.3 ms (IF,RM) 35 A
Power Dissipation @ TC = 25°C (Ptot) 283 W
Power Dissipation @ TC = 150°C (Ptot) 47 W
Operating and Storage Temperature Range (TJ, TSTG) −55 to +175 °C
Forward Voltage (Vf) 1.45 V
Reverse Current (Ir) 200 μA

Key Features

  • Max Junction Temperature: 175°C
  • Avalanche Rated: 100 mJ
  • High Surge Current Capacity
  • Positive Temperature Coefficient
  • Ease of Paralleling
  • No Reverse Recovery / No Forward Recovery
  • Pb−Free, Halogen Free/BFR Free and RoHS Compliant

Applications

  • General Purpose
  • SMPS, Solar Inverter, UPS
  • Power Switching Circuits
  • Automotive HEV/EV Onboard Chargers
  • Automotive HEV/EV DC-DC Converters

Q & A

  1. What is the peak repetitive reverse voltage of the FFSB10120A?

    The peak repetitive reverse voltage (VRRM) is 1200 V.

  2. What is the maximum junction temperature for the FFSB10120A?

    The maximum junction temperature is 175°C.

  3. Does the FFSB10120A have reverse recovery current?

    No, the FFSB10120A does not have reverse recovery current.

  4. What is the continuous rectified forward current at TC < 164°C?

    The continuous rectified forward current at TC < 164°C is 10 A.

  5. Is the FFSB10120A RoHS compliant?
  6. What are the typical applications of the FFSB10120A?

    The FFSB10120A is typically used in SMPS, Solar Inverters, UPS, Power Switching Circuits, and automotive HEV/EV systems.

  7. What is the non-repetitive peak forward surge current at TC = 25°C, 10 μs?

    The non-repetitive peak forward surge current at TC = 25°C, 10 μs is 850 A.

  8. What is the power dissipation at TC = 25°C?

    The power dissipation at TC = 25°C is 283 W.

  9. What is the operating and storage temperature range for the FFSB10120A?

    The operating and storage temperature range is −55 to +175°C.

  10. What is the forward voltage (Vf) of the FFSB10120A?

    The forward voltage (Vf) is 1.45 V.

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):1200 V
Current - Average Rectified (Io):21A (DC)
Voltage - Forward (Vf) (Max) @ If:1.75 V @ 10 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:200 µA @ 1200 V
Capacitance @ Vr, F:612pF @ 1V, 100kHz
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:D²PAK-3 (TO-263-3)
Operating Temperature - Junction:-55°C ~ 175°C
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Similar Products

Part Number FFSB10120A FFSP10120A FFSD10120A FFSH10120A FFSB20120A
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 1200 V 1200 V 1200 V 1200 V 1200 V
Current - Average Rectified (Io) 21A (DC) 10A (DC) - 17A (DC) 32A (DC)
Voltage - Forward (Vf) (Max) @ If 1.75 V @ 10 A 1.75 V @ 10 A 1.75 V @ 10 A 1.75 V @ 10 A 1.75 V @ 20 A
Speed No Recovery Time > 500mA (Io) Fast Recovery =< 500ns, > 200mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 0 ns - 0 ns 0 ns -
Current - Reverse Leakage @ Vr 200 µA @ 1200 V 200 µA @ 1200 V 200 µA @ 1200 V 200 µA @ 1200 V 200 µA @ 1200 V
Capacitance @ Vr, F 612pF @ 1V, 100kHz 612pF @ 1V, 100kHz 612pF @ 1V, 100kHz 612pF @ 1V, 100kHz 1220pF @ 1V, 100KHz
Mounting Type Surface Mount Through Hole Surface Mount Through Hole Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-2 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-247-2 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D²PAK-3 (TO-263-3) TO-220-2L TO-252AA TO-247-2 D²PAK-3 (TO-263-3)
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C - -55°C ~ 175°C -55°C ~ 175°C

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